• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.34-38
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• 1999

In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.989-993
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• 2009

Triple junction which consists of three media(electrode, insulator, and gas) should be considered in designing of high voltage equipments due to the electric field enhancement. In this paper, positive lightning impulse breakdown voltage is predicted based on the streamer theory for simplified insulator models and 72.5kV spacer with varying the triple junction geometry and gas pressure, and the results are compared to the experimental results. The electric field coefficient concept is also applied in order to evaluate the partial discharge inception voltage and the surface flashover voltage from the streamer inception voltage. The application of this method using the constant electric field coefficient of 1.3 and 0.66 is possible for evaluating the triple-junction insulation of the simplified insulator and the 72.5kV spacer respectively. The error rate is under 10%.

• Membrane Journal
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• v.20 no.3
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• pp.249-258
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• 2010

In this study, we tried to observe the permeation on the single $O_2$, $CF_4$ and $SF_6$ gas using a PSF (polysulfone), PC (tetra-bromo polycarbonate) and PI (polyimide) hollow fiber membranes. We also observed the permselectivity on the $O_2/SF_6$ and $CF_4/SF_6$. According to the results of single gases permeation for different pressures, PSF membrane has the highest $O_2$ permeation of 37.5 GPU and PC membrane has the highest $SF_6$ permeation of 2.7 GPU and the highest $CF_4$ permeation of 2.5 GPU at 1.1 MPa. According to the results of single gases permeation for different temperatures, PSF membrane has the highest permeation of $O_2$ at $45^{\circ}C$ and PC membrane has the highest permeation of $SF_6$ and $CF_4$ at $25^{\circ}C$. From the result of $O_2/SF_6$ and $CF_4/SF_6$ permselectivity for different pressures and temperature, the highest permeation and the lowest permselectivity were observed in the PSF and PC membrane. On the contrary, the lowest permeation and the highest permselectivity was observed in the PI membrane.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.119-119
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.328-329
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• 2012

$SF_6$ gas는 반도체 및 디스플레이 제조공정 중 Dry etch과정에서 널리 사용되는 gas로 자연적으로 존재하는 것이 아닌 사용 목적에 맞춰 인위적으로 제조된 gas이다. 디스플레이 산업에서 $SF_6$ gas가 사용되는 Dry etch 공정은 주로 ${\alpha}$-Si, $Si_3N_4$ 등 Si계열의 박막을 etch하는데 사용된다. 이러한 Si 계열의 박막을 식각하기 위해서는 fluorine, Chlorine 등이 사용된다. fluorine계열의 gas로는 $SF_6$ gas가 대표적이다. 하지만 $SF_6$ gas는 대표적인 온실가스로 지구 온난화의 주범으로 주목받고 있다. 세계적으로 온실가스의 규제에 대한 움직임이 활발하고, 대한민국은 2020년까지 온실가스 감축목표를 '배출전망치(BAU)대비 30% 감축으로' 발표하였다. 따라서 디스플레이 및 반도체 공정에는 GWP (Global warming Potential)에 적용 가능한 대체 가스의 연구가 필요한 상황이다. 온실가스인 $SF_6$를 대체하기 위한 방법으로 GWP가 낮은 $C_3F_6$가스를 이용하여 $Si_3N_4$를 Dry etching 방법인 RIE (Reactive Ion Etching)공정을 한 후 배출되는 가스를 측정하였다. 4인치 P-type 웨이퍼 위에 PECVD (Plasma Enhanced Chemical Vapor Deposition)장비를 이용하여 $Si_3N_4$를 200 nm 증착하였고, Photolithography공정을 통해 Patterning을 한 후 RIE공정을 수행하였다. RIE는 Power : 300 W, Flow rate : 30 sccm, Time : 15 min, Temperature : $15^{\circ}C$, Pressure : Open과 같은 조건으로 공정을 수행하였다. 그리고 SEM (Scanning Electron Microscope)장비를 이용하여 Etching된 단면을 관찰하여 단차를 확인하였다. 또한 Etching 전후 배출가스를 포집하여 GC-MS (Gas Chromatograph-Mass Spectrophotometry)를 측정 및 비교하였다. Etching 전의 경우에는 $N_2$, $O_2$ 등의 가스가 검출되었고, $C_3F_6$ 가스를 이용해 etching 한 후의 경우에는 $C_3F_6$ 계열의 가스가 검출되었다.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.7
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• pp.565-572
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• 2009

Greenhouse gas(GHG) inventories and basic strategies for Jeonbuk regional government were established to reduce greenhouse gas emissions. The method to construct GHG inventories of Jeonbuk followed the 'Revised IPCC 1996 Guidelines'which was used for the 'Third National Communication of the Republic of Korea under UNFCCC'. Korean government could use primary energy consumption for the energy industries section in the national GHG inventories. However, regional governments should use secondary energy consumption (included electricity consumption) for the energy industries section for their GHG inventories because they could not control the emission of energy transformation section. In the result of Jeonbuk GHG inventories in 2006, carbon dioxide($CO_2$) emissions from fuel combustion covered 87.1% of total emissions. Methane($CH_4$), carbon dioxide($CO_2$) from other sections, nitrous oxide($N_2O$) and F-gas(HFCs, PFCs, $SF_6$) accounted for 8.1, 2.2, 1.6 and 1.0% of total emissions, respectively. The sectional emission decreased in the order of the energy(88.0%), agriculture(7.6%), waste(2.3%) and industrial processes(2.1%) section. The energy industries section that contained electricity consumption was the most dominant emission source in the energy section. F-gas consumption, rice cultivation and waste incineration were main emission sources in the industrial processes, agriculture and waste section, respectively. In this study, basic directions of each section were established by the results of Jeonbuk GHG inventories in 2006.

• 전기의세계
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• v.27 no.1
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• pp.45-48
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• 1978

A pressure dependence in the value of Es/p at a constant pd is observed in sulphur hexafluoride at pressures in excess of about one bar. This is explained in terms of the non-idealgas behavior of SF$_{6}$ which has a significant influence on the interpretation of electrical breakdown of this gas. The criterions for breakdown at low pressures and in the presence of rough electrodes are modified to allow this phenomeneon.n.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.429-434
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• 2016

This paper deals with the characteristics of partial discharge (PD) for the purpose of a condition based maintenance (CBM) of gas insulated switchgears (GIS) in power equipment. Four types of electrode systems such as a protrusion on enclosure (POE), a particle on spacer (POS), a free particle (FP) and a Floating were designed and fabricated. PD pulses were measured using UHF sensor with a frequency range of 300 MHz~1.4 GHz and a DAQ with a sampling rate of 250 MS/s. Discharge inception voltage (DIV), discharge extinction voltage (DEV), and phase resolved partial discharge (PRPD) were analyzed depending on electrode systems. The average DIV in the POS was 28.8 kV. It was about 1.7 times higher than that in the FP, which was the lowest value of 17.2 kV. The FP shuffled and jumped at the applied voltage of 23.5 kV. Over 95% of PD pulses in the POE were generated in the negative polarity ($181^{\circ}{\sim}360^{\circ}$) of applied voltage. The results showed the phase (${\Phi}$)-magnitude (dBm) of PD pulses by UHF sensor, a cluster was formed separately depending on electrode systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.831-836
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• 2015

This paper dealt with the PD (partial discharge) characteristics produced by metallic particles presented in a gas insulated switchgear. Four types of metallic particles such as a ball, a trapezoid, a rectangle, and a twist were fabricated and placed in a PD cell filled with $SF_6$ gas. PD pulses were detected through a $50{\Omega}$ non-inductive resistor. Calibration was carried out according to IEC 60270 and the sensitivity was calculated as 4 mV/pC. Apparent charge, pulse count, DIV (discharge inception voltage), DEV (discharge extinction voltage), and TRPD (time resolved partial discharge) were analyzed. Among the metallic particle types, the twist frequently occurred PD pulse at the lowest DIV, while the rectangle showed the highest. DEV of the twist was about 2 times lower than that for the rectangle. Kurtosis of ball clustered at high value, and skewness of other three metallic particles distributed at low value. TRPD showed different distribution by metallic particle types.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05a
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• pp.86-89
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• 2004

The present study reports the preparation of a compact ZSM-5 membrane showing high thermal stability and high separation factors, especially n-/i-butane isomers at high temperatures. ZSM-5 membrane was prepared on a porous $\alpha$-Al$_2$O$_3$ tube (an average pore diameter, ca. 100 nm) at 18$0^{\circ}C$ by the seed-assisted crystallization method. The XRD and SEM results showed that a thin zeolite layer (ca. 1 ${\mu}{\textrm}{m}$) was formed on the support surface. The single gas permeances of $N_2$, H$_2$, SF$_{6}$, n-butane, and i-butane were taken at 27$0^{\circ}C$. i-Butane permeance hardly changed after repeated thermal treatments up to 40$0^{\circ}C$, indicating the membrane is thermally stable. On the other hand, other single gas permeances increased when the membrane was further dried at 40$0^{\circ}C$, indicating thermal pretreatment at 27$0^{\circ}C$ could not remove all the adsorbed species in the membrane. i-Butane and SF$_{6}$ permeances were significantly lower than the permeances of smaller molecules, indicating that the membrane has a low concentration of defects. The ideal selectivities at 27$0^{\circ}C$ were 61 for $H_2$/i-butane and 47 for $H_2$/SF$_{6}$. The temperature dependency of n/i-butane ideal selectivities and separation factors for an equimolar n/i-butane mixture was studied. The ideal selectivity showed a maximum of 36 at 30$0^{\circ}C$. The separation factors increased with temperature and reached around 12 at 300-40$0^{\circ}C$, which were much higher than those reported in the literature.ature.