• Title/Summary/Keyword: SF Film

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The cultural characteristic of American film (genre drama) in (영화 <블라인드 사이드 Blind Side>에 나타난 '드라마' 장르의 미국 문화 특성)

  • Han, Yong Taek;Woo, Jung Gueon
    • Cross-Cultural Studies
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    • v.26
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    • pp.273-296
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    • 2012
  • The purpose of this paper is to examine the characteristics of American film (genre drama) through the analysis of , which merits our attention because the proportion of domestic gross earnings to foreign gross earnings is four to one. It means that the cultural discount rate of this film is relatively higher than the films which belong to the other genres, for example adventure, action, fantasy, SF etc. And it would be correct to say that this film is typically american. What is the reason of this difference of cultural discount rate? And what allows this film to be defined as a typical American film. The analysis of shows that the difference doesn't result from the actant structure. In fact the narrative structure of this film is similar to the other films of drama genre like or : the common structure of drama genre is characterized by an encounter of sujet and adjuvant and the progress of their relationship. But the drama is a genre in which the reflection of the actualities is important as compared with other genres. In that sense the story of is based upon the American cultural characteristics. Because the process that realize the progress of relationship between two protagonists is typically American such as race problem, adoption system, concept of family, system of education and going to college etc. As a result it is possible that move less the worldwide spectators than the American spectators.

Electrical characteristics of PET film for wire insulation of transformer in fluorocarbon (Fluorocarbon에서의 변압기권선 절연용 PET필름의 전기적 특성연구)

  • 허창수;이재복
    • Electrical & Electronic Materials
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    • v.9 no.5
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    • pp.483-489
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    • 1996
  • Power transformer have many unsymmetrical structure and electric field is enhanced in that area. Those unsymmetrical area are not covered oftenly by solid insulating material which is used as a framework specially in gas transformer. By that result there is a possibility to decrease the total insulation class of the transformer. So in this study the electrical characteristic of $FC+SF_6$ mixture gas which is used as coolants for large power gas insulated transformer and its effects on electrical characteristics of structural material are investigated. Also breakdown characteristic with the tension of taping and curvature of the coil are studied which could be used as a design factor of large power transformer.

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Etch characteristics of high-k dielectrics thin film by using inductively coupled plasma (유도결합 플라즈마를 이용한 고유전율 박막의 식각특성)

  • Kim, Gwan-Ha;Woo, Jong-Chang;Kim, Kyoung-Tae;Kim, Dong-Pyo;Lee, Cheol-In;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.140-141
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    • 2007
  • 반도체 소자의 공정에 있어서 device scaling으로 인한 고유전 게이트 산화막 (high-k dielectics thin film)의 공정 개발 확보 방안이 필요하다. 본 논문에서는 유도결합 플라즈마를 이용하여 고유전율 박막을 식각하였다. CF4, SF6 등의 가스에서 금속-F, 금속-S 결합의 낮은 휘발성으로 인하여 시료 표면에 잔류하여 낮은 식각률을 보이며 측벽 잔류물을 형성하였으며, HBr, Cl 기반 플라즈마에서 금속-Br, 금속-Cl 결합은 시료 표면으로부터 탈착이 용이하여 효과적인 식각이 이루어짐을 확인할 수 있었다.

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The study of silicon etching using the high density hollow cathode plasma system

  • Yoo, Jin-Soo;Lee, Jun-Hoi;Gangopadhyay, U.;Kim, Kyung-Hae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1038-1041
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    • 2003
  • In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

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Two Types of Post-human in Recent Korean SF Films : Focusing on (2021), (2021) (최근 한국영화 속 포스트-휴먼의 두 가지 양상: <승리호>(2021), <서복>(2021)을 중심으로)

  • Yoo, Jae-eung;Lee, Hyun-Kyung
    • The Journal of the Convergence on Culture Technology
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    • v.8 no.1
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    • pp.379-384
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    • 2022
  • The year 2021 is a monumental year for the history of Korean cinema that inferiority of the sci-fi genre, by the appearance of two sci-fi blockbuster films- produced by Netflix and produced by TVing-at the same time. Coincidentally, both of movies are sci-fi films which appear post-human such as robot and clone. As can be seen in 『Frankenstein』 story, the progenitor of science fictions, the mankind have imagined beings similar to humen or post-human who are another human being for a long time. deals with the unusual subject matter of a space scavenger and a space janitor, and the main character is a robot that very familiar with human. is the story of a man who lives for a limited life protects and accompanies a clone named Seobok who was created as a test subject. This film deals with the philosophical themes like death and eternal life through the existential concerns of two characters. use Korean Shinpa -Korean specific senimental code-sentiment on narrative, and has the character of a road movie set in Korea's geographical space.

A Study on the Expression Style of the Sci-Fi Movie Set Design (SF 영화 세트 디자인의 표현 유형에 관한 연구)

  • 김태은;김주연
    • Korean Institute of Interior Design Journal
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    • no.33
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    • pp.122-128
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    • 2002
  • In the Sci-Fi movie, with future scene in its setting, how images are shown in the film is very important. Sci-Fi movie is supposed to be expressed In different way of its set design. This study suggests various types of expression in Sci-Fi movies. Sci-Fi movies construct the narrative upon the binary opposition of nature vs. culture, human vs. nonhuman. Sci-Fi movie is a contested terrain where conservative, liberal and radical ideologies are competing. While liberal Sci-Fi movies consider the opposition compatible, conservative texts show the paranoid towards science and nonhumans. And, Sci-Fi movies are expressed as utopian and dystopian. Utopian and dystopian elements are found in the history of architecture. Utopian element is often found in the religious architecture, and those buildings are geometric, orderly, and gorgeous. Dystopian element is often found in modern architecture, and those are asymmetric, distorted, and incompleted. Conservative movie, which developing of science is expressed negatively, retains both utopian and dystopian elements evenly. Liberal movie, such as Space Opera which science is expressed positively, is changed from futurist and mechanical type into more simple, geometric and orderly shrine type. Radical movie, which the boundary of human and science is expressed darkly, retains dark, complex, and incomplete dystopian expression elements.

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

  • Lee, Joon-Hoi;Lee, Wook-Jae;Choi, Man-Sub;Yi, Joon-Sin
    • Journal of Information Display
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    • v.2 no.4
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    • pp.1-7
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    • 2001
  • This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

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Fertilization of N and Si to Sustain Grain Yield and Growth Characteristics of Rice after Winter Greenhouse Water-melon Cropping

  • Cho, Young-Son;Jeon, Weon-Tae;Park, Chang-Young;Park, Ki-Do;Kang, Ui-Gum;Muthukumarasamy, Ramachandran
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.51 no.6
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    • pp.505-512
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    • 2006
  • In Korea, silicate fertilization (SF) is being practiced every four years to enhance rice production. However, the relationship between nitrogen (N) and SF in view of growth characteristics and grain yield of rice has not been examined after watermelon cropping in plastic film house. This study was carried out to identify useful critical N and Si fertilizer levels to sustain grain yield and to improve N use efficiency for rice. The watermelon-rice cropping system has maintained for three seasons in each year from 1998 to 2001 by farmer before this experiment. Experiments on N and Si fertilization levels were evaluated with Hwayoungbyeo (Oryza sativa L.) in 2002 and 2003 at Uiryeong, Korea. The goal of this experiment was to find out the optimum N and Si levels to sustain rice yield by reducing excessive N fertilizer in watermelon-rice cropping system. Nitrogen fertilization (NF) levels were three ($0,\;57,\;114kg\;ha^{-1};0,\;50,\;100%$ of conventional NF amount) and five (0, 25, 50, 75, 100%) in 2002 and 2003, respectively, and combined with three SF levels ($70,\;130,\;180mg\;kg^{-1};100,\;150,\;200%$ which were adjusted with Si fertilizer in soil) were evaluated for the improvement of N and Si fertilization level in both years. Rice yielded 3.98-5.95 and 2.84-4.02 t/ha in 2002 and 2003, respectively. Our results showed the combinations of 50% and 100% of N with 200% level of Si produced the highest grain yield in both years, respectably. The grain yield was greatly improved in plot of N25% level when compared to conventional NF (Nl00%) in 2003. In conclusion, NF amount could be reduced about 50% compared to recommended level by specific fertilization of N and Si combination levels for rice growing and grain yield after cultivation watermelon in paddy field.

A Study on the Space Change according to the use of Digital Display - Focusing on the Analysis of Future SF Film - (디지털 디스플레이 활용에 따른 공간 변화에 관한 연구 - 미래영화 분석을 중심으로 -)

  • Lim Ju-Youn;Lee Chul-Jae
    • Korean Institute of Interior Design Journal
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    • v.15 no.3 s.56
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    • pp.83-91
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    • 2006
  • Our human society is rapidly changing into the world of advanced visual information with the development of image industry, the advent of satellite and terrestrial DMB, and the opening of Ubiquitous era. Like this, we are living in the space of overflowing media contents. Jean Baudrillad anticipated that the influential power of image would dominate our reality in 'Simulation'. Noticing the indication of our time, which is organized by various information media including the mass media, Baudrillad predicted that the 21st century would be an era of symbol and image due to the development of television, computer, and internet. This paper attempts to find the physical and conceptual peculiarities of the space change according to the use of display, by analyzing SF films, where future daily life is a major setting, under the judgement that the exploration of space change is significant. Through findings, it tries to lead the visual expansion, which recognizes display as space itself rather than object of space and changes unmoving space into moving space, and suggest the future space design by using digital space. It suggests case studies, which use digital display in the real space, as a study method and it examines the features, influences, and roles of digital display through investigating literatures and cases. In addition, it attempts to find a correlation of digital display and space by selecting films, which can give the affluent resources of analysis on the digital display among SF films. Therefore, it will come to a conclusion that space change should be dealt with in the space design.

Statistical Qualitative Analysis on Chemical Mechanical Polishing Process and Equipment Characterization

  • Hong, Sang-Jeen;Hwang, Jong-Ha;Seo, Dong-Sun
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.3
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    • pp.115-118
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    • 2011
  • Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.