• 제목/요약/키워드: SE Measurement

검색결과 946건 처리시간 0.032초

Digital PID Control을 적용한 Scanning Probe Microscopy의 Nano-grating 측정 (The Measurement of Nano-grating by Scanning Probe Microscopy Using Digital PID Control)

  • 박경덕;지원수;김대찬;장동훈;오범환;박세근;이일항;이승걸
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 하계학술발표회 논문집
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    • pp.185-186
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    • 2008
  • In this paper, the nano-grating was measured by Scanning Probe Microscopy (SPM) system using digital Proportion, Integration and Derivative (PID) control. Through this measurement, we could confirm the improvement of the vertical resolution compared with analog Proportion and Integration (PI) control method.

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Influence of Annealing Temperature on Structural and Thermoelectrical Properties of Bismuth-Telluride-Selenide Ternary Compound Thin Film

  • Kim, Youngmoon;Choi, Hyejin;Kim, Taehyeon;Cho, Mann-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.304.2-304.2
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    • 2014
  • Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

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광전류 측정으로부터 얻어진 $CdGa_2Se_4$ 에피레이어의 결정장 갈라짐에 대한 에너지 (Crystal field splitting energy for $CdGa_2Se_4$ epilayers obtained by photocurrent measurement)

  • 홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.144-145
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    • 2009
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

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DC sputter방식으로 제조된 $Cu_2Se$ 박막의 전자빔 처리에 따른 특성 연구 (Study on electron beam treatment on $Cu_2Se$ thin films by DC sputtering method)

  • 권혁;김재웅;정승철;김동진;박인선;정채환
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.53.1-53.1
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    • 2011
  • 현재 태양전지시장에서 비중이 많은 실리콘 태양전지는 높은 효율에 비해 제조 단가가 비싸다는 단점을 가지고 있다. 이에 비해 칼코파라이트 구조의 $CuInSe_2$ (CIS)계 화합물은 직접 천이형 반도체로서 높은 광흡수 계수($1{\times}105cm-{\acute{e}1$)와 밴드갭 조절의 용이성 및 열적 안정성 등으로 인해 고효율 박막 태양전지용 광흡수층 재료로 많은 관심을 끌고 있다. CIS 계 물질에 속하는 Cu(InGa)$Se_2$ (CIGS) 태양전지의 경우 양산화에 sputtering방식사용하고 Showa Shell에서는 대면적 CIGS 모듈 효율 13.4%를 달성한 바 있다. 현재 CIGS는 열처리하는 방법으로 selenization 공정을 사용하는데 이 공정은 유독한 $H_2Se$ gas를 이용해야 한다는 점과 긴 시간 동안 열처리를 해야 하는 단점을 가지고 있다. 따라서 이러한 단점을 보완하기 위해 본 연구에서는 전자빔을 사용하여 후속 공정을 실시하였다. 전자빔을 사용할 경우 낮은 온도에서 precursor를 처리하며 짧은 시간에 공정이 끝난다는 장점이 있다. 본 연구에서는 sodalime glass위에 조성비(Cu 60.87% Se 38.66%)인 Cu_2Se$ target(4.002"${\times}0.123$") 을 DC sputter를 이용하여 DC power를 50W,100W를 주고 Working pressure를 20,15,10,5,3,1mtorr로 조절하여 증착하였다. 전자빔의 세기 조건을 3Kv, Rf power 200W, Ar 7sccm로 전자빔 조사 시간을 1,2,3,4,5min으로 늘려가며 최적화 실험 하였고 최적화된 조건으로 $Cu_2Se$ target에 조사 하였다. 박막의 특성평가는 전자빔 조사 전/후에 대해 XRD, SEM, XRF, Hall measurement, UV-VIS을 이용하여 분석평가를 하였다. 이 실험은 $Cu_2Se$상이 자라는 특성과 표면 상태에 따라 CIGS박막을 증착하였을 때 나타나는 효율 변화를 알아 보기위한 초기 공정 실험이다.

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Synthesis and Characterization of SiO2-Sheathed ZnSe Nanowires

  • Kim, Hyun-Su;Jin, Chang-Hyun;A,, So-Yeon;Lee, Chong-Mu
    • Bulletin of the Korean Chemical Society
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    • 제33권2호
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    • pp.398-402
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    • 2012
  • ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

HWE(Hot Wall Epitaxy)에 의한 태양 전지용 박막성장과 특성에 관한 연구 (The Study of Growth and Characterization of CuGaSe$_2$ Sing1e Crystal Thin Films for solar cell by Hot Wall Epitaxy)

  • 홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.237-242
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    • 2001
  • The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

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한국 성인 발 형태의 좌우 및 변형 연구 (A Study on Left and Right Shape and Deformation of Feet of Korean Adults)

  • 임현균;박수찬;최경주;김진호;박세진
    • 대한인간공학회지
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    • 제20권1호
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    • pp.73-86
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    • 2001
  • An analysis of anthropometric data of feet of Korean adults was made in this study. Anthropometric data were measured with the direct measurement method and indirect measurement method. Martin scales and a tapeline were used for direct measurement. Digital images taken with a digital camera as an indirect measurement method were analyzed using AutoCAD program. Total 114 adults aged from 20's to 40's participated in this study. Especially right and left feet were measured. Right and left side were compared and differences according to age were compared too. Feet shape, arch height, and deformation of toe were analyzed. The comparison between right and left foot showed that many subjects had different anthropometric data in their feet. Feet deformation including arch height and claw toe shape showed very serious status. Close and continuous attention to feet deformation is strongly needed.

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Noise-robust Phase Gradient Retrieval Formulation for Phase-shifting Interferometry

  • Park, Dae-Seo;O, Beom-Hoan;Park, Se-Geun;Lee, El-Hang;Park, Jae-Hyun;Lee, Seung-Gol
    • Journal of the Optical Society of Korea
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    • 제14권2호
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    • pp.131-136
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    • 2010
  • Modification of the phase gradient formulation is proposed in order to make phase retrieval less susceptible to noise. The modified formulation is derived from separation of the phase terms and the intensity modulation terms of interferograms, and subsequent differentiation to reduce the noise-induced error of the phase gradient vector. Its performance is evaluated and compared to that of the conventional formulation, and noise-robust nature is confirmed.

Calibration of Inertial Measurement Units Using Pendulum Motion

  • Choi, Kee-Young;Jang, Se-Ah;Kim, Yong-Ho
    • International Journal of Aeronautical and Space Sciences
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    • 제11권3호
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    • pp.234-239
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    • 2010
  • The utilization of micro-electro-mechanical system (MEMS) gyros and accelerometers in low-level inertial measurement unit (IMU) influences cost effectiveness in a positive way under the condition that device error characteristics are fully calibrated. The conventional calibration process utilizes a rate table; however, this paper proposes a new method for achieving reference calibration data from the natural motion of pendulum to which the IMU undergoing calibration is attached. This concept was validated with experimental data. The pendulum angle measurements correlate extremely well with the solutions acquired from the pendulum equation of motion. The calibration data were computed using the regression method. The whole process was validated by comparing the measurement from the 6 sensor components with the measurements reconstructed using the identified calibration data.

효과적인 계측시스템을 위한 IEEE 1451 적용에 관한 연구 (A Study on the application of IEEE 1451 for efficient measurement system)

  • 조항덕;박우일;문세상;김우식
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2007년도 춘계학술대회논문집
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    • pp.983-986
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    • 2007
  • In this paper, we addressed the IEEE 1451.x that can organize a sensor network for efficient measurement system. IEEE 1451 provides standard interface, specification and Object model for example Network Capable Application Processor(NCAP), Transducer Electronic Data Sheet(TEDS), Smart Transducer Interface Module (STIM) and so on. Especially IEEE 1451.2 defines the TEDS Formats and STIM. The TEDS makes transducer to be used independently from device. NCAP makes the component of measurement system to be handled as an object. Therefore each function block constructs system by using Add-on. IEEE 1451.x can be expend the system with Add-on and Plug-and-Play by using smart sensor and connected with current network. We expect that this method can provide the efficiency and convenience when using the measurement system.

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