• 한국재료학회지
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• 제20권8호
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• 한국자기학회지
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• 제24권2호
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• pp.41-45
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• 2014

뫼스바우어 분광 법과 x선 회절 측정으로 $(Fe_{0.95}Ni_{0.05})_7Se_8$을 연구하였다. $(Fe_{0.95}Ni_{0.05})_7Se_8$의 결정구조는 NiAs 구조의 triclinic superstructure를 나타내었다. 반면에 $Fe_7Se_8$의 결정구조는 orthohexagonal structure를 나타내었다. 125 K 부근에서 $(Fe_{0.95}Ni_{0.05})_7Se_8$의 전기사중극자 분열 값의 갑작스러운 변화는 triclinic superstructure를 갖는 $Fe_7Se_8$에서 보고된 점진적인 스핀 회전 전이와는 대조적으로 갑작스럽게 스핀 회전이 발생함을 보여주었다. 실온에서 측정된 $(Fe_{0.95}Ni_{0.05})_7Se_8$의 이성질체 이동 값은 0.5~0.69 mm/s를 나타냈는데 이 값으로부터 $A_1$, $A_2$, B, C 4개의 모든 사이트가 $Fe^{2+}$ 상태임을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.86-87
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• 2009

High quality $CuInSe_2$ (CIS) were grown on GaAs substrate by using the hot wall epitaxy method. The behavior of point defects in the CIS layer investigated by using photoluminescence (PL) at 10 K. Point defects originating from $V_{Cu}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ were classified as donor or acceptor types. These PL results also led us to confirm that the p-type CIS layer had obviously converted into n-type after the Cu atmosphere treatment. Finally, we found that the In in the CIS layer did not form the native defects, because In existed in the form of stable bonds in the CIS layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.872-876
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• 2006

This study was made to examine the electromagnetic interference(EMI) shielding effect (SE) of multilayered thin films in which indium-tin oxide(ITO) and Ag were deposited alternately from 3layer to 9 layer on Poly Methyl Meth Acrylate(PMMA) substrate at room temperature using a PF sputtering. We measured optical and electrical characteristics by UV-spectrometer and 4 point probe. The measurement of EMI SE in frequency range from 50MHz to 1.5GHz was performed by using ASTM D4935-89 method. We compared the measured EMI SEs with theoretical simulation data. We obtained relatively low resistivity and high transmittance from the EMI SE multilayers. In this study, we obtain good optical electrical characteristics with a minimun transmittance of about 60% at 550nm wavelength and sheet resistance of $2{\sim}3ohm/sq$., respectivity. Measured EMI SEs were over 50dB and similar to theoretical simulation data.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Journal of Mechanical Science and Technology
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• 제17권12호
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• pp.2099-2106
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• 2003

In this paper, a novel fast response NDIR analyzer (FRNDIR), which uses an electrically pulsed semiconductor emitter and dual type PbSe detector for the PPM-level detection of carbon dioxide (CO$_2$) at a wavelength of 4.28 $\mu\textrm{m}$, is described. Modulation of conventional NDIR energy typically occurs at 1 to 20 Hz. To achieve real time high-speed measurement, the new analyzer employs a semiconductor light emitter that can be modulated by electrical chopping. Updated measurements are obtained every one millisecond. The detector has two independent lead selenide (PbSe) with IR band pass filters. Both the emitter accuracy and the detector sensitivity are increased by thermoelectric cooling of up to -20 degrees C in all semiconductor devices. Here we report the use of semiconductor devices to achieve improved performance such that these devices have potential application to CO$_2$ gas measurement and, in particular, the measurement of fast response CO$_2$ concentration at millisecond level.

• Journal of Electrical Engineering and Technology
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• 제12권3호
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• pp.996-1006
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• 2017

Phasor Measurement Unit (PMU) placement is a crucial problem for State Estimation (SE) of the power system, which can ensure that the power network is fully observed. Further, the observation reliability problem of the system has been concerned in the operation conditions. In this paper, based on modified weighted adjacent matrix ($A_w$), an optimal placement method is proposed to solve simultaneously two problems involving the optimal PMU placement problem and the observation reliability enhancement problem of the system. The purpose of the proposed method is to achieve both the minimum total cost and the maximum observation reliability, with a focus on increasing the security of observability, strengthening the observation reliability of buses as well as enhancing the effectiveness of redundancy. Simulations on IEEE 14, 24, 30 and 57 bus test systems are presented to justify the methodology. The results of this study show that the proposed method is not only ensuring the power network having the observability effectively but also enhancing significantly the observation reliability. Therefore, it can be a useful tool for SE of the power system.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2014년도 제49회 KOSCO SYMPOSIUM 초록집
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• pp.323-325
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• 2014

• 순환기질환의공학회:학술대회논문집
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• 순환기질환의공학회 2006년도 제6회 학술대회
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• pp.21-23
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• 2006