• Title/Summary/Keyword: SCE frequency

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Sister Chromatid Exchanges(SCE) in Cultured Human Lymphocytes Induced by Cadmium, Selenium and Zinc (배양임파구에서 카드뮴, 셀레늄 및 아연 투여가 자매염색분체교환에 미치는 영향)

  • 이연경;조영채
    • Journal of Environmental Health Sciences
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    • v.23 no.4
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    • pp.26-32
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    • 1997
  • To evaluate the cytogenetic toxicity, of cadmium and the reducing effect of selenium or zinc on cadmium toxicity, the induction of SCEs in cultured human lymphocytes by the concentraion of 0.5 $\mu$M to 16.0 $\mu$M of cadmium chloride and those of cadmium chloride combined with sodium selenite or zinc chloride 1.2 $\mu$M, respectively was investigated. The induction of SCEs by cadmium chloride in the range of 0.5 $\mu$M to 16.0 $\mu$M increased in a dose-dependent manner. A notable increase in SCEs by sodium selenite as well as zinc chloride was also observed. However, the frequency of SCEs by cadmium chloride was inhibited by the simultaneous addition of sodium selenite and zinc chloride 1.2 $\mu$M, respectively. The mitotic index significantly decreased in higher concentration of cadmium chloride but not was significantly different in any concentration of cadmium chloride with the simultaneous addition of sodium selenite or zinc chloride. The results showed that the decreased additive SCE effect was observed when induced by the combined treatment which could suggest that sodium selenite and zinc chloride have a protective effect on cadmium chloride.

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Effect of a 60Hz electromagnetic field on the frequency of bleomycin-induced HPRT gene mutation and 1,2,4-benzenetriol-induced sister chromatid exchanges in CHO cell

  • Chung, Hai-Won;Kang, Su-Jin;Lee, Young-Joon;Kim, Su-Young
    • Journal of Radiation Protection and Research
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    • v.27 no.2
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    • pp.81-87
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    • 2002
  • The interaction of low density extremely low frequency magnetic field (ELF MF) in the frequency of hypoxanthine-guanine phosphoribosyltransferase (HPRT) mutation induced by bleomycin and on the frequency of sister chromatid exchanges (SCEs) induced by 1,2,4-benzenetriol(BT) was demonstrated. CHO cells pretreated with bleomycin or 1,2,4-benzenetriol were exposed for 24hrs to a sinusoidal 0.8mT magnetic field at 60Hz. Frequency of HPRT mutation and SCEs were determined. ELF MF exposure led to a two-fold increase of the frequency of HPRT mutation induced by bleomycin. No increase of mutation frequency was observed by ELF MF alone ELF MF also increased the frequency of SCEs induced by BT while no Increase of SCE frequencies were observed by ELF MF alone. These results suggest that low density ELF MF field would art as an enhancer rather than as an initiator of mutagenic effects in CHO cell.

Chromosome Aberration and Sister Chromatid Exchange for the Assessment of Cadmium Toxicity (카드뮴독성을 평가하기 위한 방법으로서의 염색체 이상 및 자매염색체 교환)

  • 맹승희;정해원
    • Journal of Environmental Health Sciences
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    • v.17 no.1
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    • pp.110-119
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    • 1991
  • This study was performed to investigate the applicability of 9 chromosome aberration and sister chromatid exchange analysis for the assessment of cytotoxicity and cytogenetic effects of cadmium. Induction of chromosome aberration and sister chromatid exchange in CHO-K1 cells and human peripheral lymphocytes by 2 hour-treatment of CdCl$_{2}$ with various concentrations was observed in relation to their frequencies and types of aberration. The frequency of chromosome aberration in CHO cells treated with CdCl$+{2}$ at G$_{1}$ was increased with dose-dependent manner. When human peripheral lymphocytes were treated with cadmium at G0 and harvested at 72 hours there after, the response was dose-dependent and all the aberrations were also chromatid types. There was no significant increase in frequencies of sister chromatid exchange in both CHO cells and human lymphocytes treated with different concentrations of cadmium. It was suggested that SCE analysis was not a good assessment method for cadmium toxicity.

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Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs

  • Wang, Wei;Wang, Huan;Wang, Xueying;Li, Na;Zhu, Changru;Xiao, Guangran;Yang, Xiao;Zhang, Lu;Zhang, Ting
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.615-624
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    • 2014
  • In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

  • Wang, Wei;Xu, Hongsong;Huang, Zhicheng;Zhang, Lu;Wang, Huan;Jiang, Sitao;Xu, Min;Gao, Jian
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.91-105
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    • 2016
  • Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

  • Kim, Sung Yoon;Seo, Jae Hwa;Yoon, Young Jun;Yoo, Gwan Min;Kim, Young Jae;Eun, Hye Rim;Kang, Hye Su;Kim, Jungjoon;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.508-517
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    • 2014
  • We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

Optimize KNN Algorithm for Cerebrospinal Fluid Cell Diseases

  • Soobia Saeed;Afnizanfaizal Abdullah;NZ Jhanjhi
    • International Journal of Computer Science & Network Security
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    • v.24 no.2
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    • pp.43-52
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    • 2024
  • Medical imaginings assume a important part in the analysis of tumors and cerebrospinal fluid (CSF) leak. Magnetic resonance imaging (MRI) is an image segmentation technology, which shows an angular sectional perspective of the body which provides convenience to medical specialists to examine the patients. The images generated by MRI are detailed, which enable medical specialists to identify affected areas to help them diagnose disease. MRI imaging is usually a basic part of diagnostic and treatment. In this research, we propose new techniques using the 4D-MRI image segmentation process to detect the brain tumor in the skull. We identify the issues related to the quality of cerebrum disease images or CSF leakage (discover fluid inside the brain). The aim of this research is to construct a framework that can identify cancer-damaged areas to be isolated from non-tumor. We use 4D image light field segmentation, which is followed by MATLAB modeling techniques, and measure the size of brain-damaged cells deep inside CSF. Data is usually collected from the support vector machine (SVM) tool using MATLAB's included K-Nearest Neighbor (KNN) algorithm. We propose a 4D light field tool (LFT) modulation method that can be used for the light editing field application. Depending on the input of the user, an objective evaluation of each ray is evaluated using the KNN to maintain the 4D frequency (redundancy). These light fields' approaches can help increase the efficiency of device segmentation and light field composite pipeline editing, as they minimize boundary artefacts.

The effects of chromium exposure on sister chromatid exchange and concentration of 8-hydroxydeoxyguanosine (크롬 폭로가 자매염색분체교환 빈도 및 8-hydroxydeoxyguanosine 농도에 미치는 영향)

  • Han, Sang-Hwan;Cho, Soo-Hun;Kim, Heon;Ha, Mi-Na;Joo, Young-Soo;Park, Soo-Min;Kwon, Ho-Jang;Kim, Yong-Dae;Chung, Myung-Hee
    • Journal of Preventive Medicine and Public Health
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    • v.28 no.2 s.50
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    • pp.511-525
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    • 1995
  • To elucidate some DNA adducts as a biological marker for workers of chromate pigment, the effects of chromium exposure on the formation of 8-hydroxydeoxyguanosine(8-OH-dG) and sister chromatid exchanges(SCEs) frequency in 38 workers of a pigment plant in Bucheon which utilized lead chromates, were examined. The chromium contents of venous blood and urine were measured as working environmental exposure level. The concentrations of 8-OH-dG in DNA isolated from lymphocytes were determined with high performance liquid chromatography and electrochemical detector and denoted as a molar ratio of 8-OH-dG to deoxyguanosine(dG). The SCEs frequency were analyzed in DNA isolated from lymphocytes. A significant correlation was found between creatinine adjusted urine chromium concentration and the molar ratio of 8-OH-dG to dG(r=0.47, p<0.01). After adjusting the current smoking habit, the correlation coefficient was increased(r=0.62, p<0.05). However, there was no significant correlation between the SCE frequency and chromium exposure. This significant results between molar ratio of 8-OH-dG to dG and chromium exposure are in good agreement with in vitro studies that support the importance of DNA adduct formation for the carcinogenic effect of chromium.

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