• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2007.05a
• /
• pp.423-426
• /
• 2007

In this paper, vibration reduction of resiliently mounted machinery and effect of the foundation impedance is studied. SBN (Structure-borne noise) reduction through the mount is analyzed by assuming that the system is modeled as a mass-spring system, while the impedance of the floor is included in the prediction. The comparison of the SBN difference through the mount between predictions and measurements show that the slopes are similar in the case of single-mount system, while the measurements differs significantly from the predictions in the case of the double-resilient system.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.4
• /
• pp.538-540
• /
• 2009

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1144-1147
• /
• 2002

Ferroelectric $Sr_xBa_{1-x}Nb_2O_6(0.25{\leq}x{\leq}0.75)$ thin films were prepared by the Ion Beam Sputtering method. Deposit onto Pt/Ti/$SiO_2$/Si(100) substrates. The deposited thin films were heat-treated for crystallization. Microstructure and crystallization behavior were examined using FE-SEM, XRD. Ferroelectric hysteresis were measured. The measured remanent polarization and coercive field values were $38{\mu}C/cm^2$ and 120kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.185-186
• /
• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The rougness showed about 4.33[nm]. Deposition rate of SBN thin films was about 4.17[nm/min]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.9
• /
• pp.598-601
• /
• 2015

The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

• Korean Journal of Materials Research
• /
• v.13 no.12
• /
• pp.846-849
• /
• 2003

Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2＋}$, $Pb^{2＋}$,$ Ca^{2＋}$ , $Bi^{3＋}$ , $La^{3＋}$ , $Ti^{4＋}$ , $Mo^{6＋}$ , and $W^{6＋}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2＋}$ , $Ba^{2＋}$ , $La^{3＋}$ doping, but the transition temperature increased with $Ca^{2＋}$ , $Bi^{3＋}$ , $Ti^{4＋}$, $Mo^{6＋}$ , or$ W^{6＋}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.39-42
• /
• 2012

To study the physical and chemical properties, solid solutions of $(Sr_{1-x}Ba_x)NdFe{^{3+}}_{1-\tau}Fe{^{4+}}_{\tau}O_{4-y}$ system with x=0.0(SBN-0), 0.1(SBN-1), 0.2(SBN-2) and 0.3(SBN-3) were synthesized in air at 1,473 K and annealed in air at 1,073 K for 24 h. X-ray powder diffraction assured that the four samples had tetragonal symmetries (I4/mmm). Their lattice volumes increased gradually with x values. Nonstoichiometric chemical formulas were formulated using the data such as $\tau$(amount of $Fe^{4+}$ ion) and y(oxygen deficiency) values using Mohr salt analysis. It was found out that all the four samples had excessive oxygen (4-y>4.0). All the samples started to lose some of their oxygen at around 613K(TG/DTA thermal analysis). They exhibited semiconductivities in the temperature range of around 283-1173K. All the four specimens had sufficient tensile strength to endure the force of 19.6 N (2 kg of weights) and the conductivity values of the ECIAs which were painted on pieces of glass with the area of $150mm^2$ ($10mm{\times}15mm$) and it was in the order of ECIA-0${\rightarrow}$ECIA-1${\rightarrow}$ECIA-2${\rightarrow}$ECIA-3 at a constant temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.1030-1035
• /
• 2001

Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2006.11a
• /
• pp.124-127
• /
• 2006

In this paper, noise and vibration reduction of double-resiliently mounted pump-like machinery is studied. SBN(Structure-borne noise) reduction through upper and lower mount is analyzed by assuming that the system is modeled as a mass-spring system. In addition, the impedance of the floor is included in the prediction. The comparison of the SBN difference through upper mount show that the effect of impedance is negligible, while the measurement differs significantly from the prediction for high frequency range. It is found that the assumption of point mass-spring system leads to the disagreement between prediction and measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.119-119
• /
• 2008

The electrical characteristics of Metal-Ferroelectric-Nitride-Oxide-Silicon (MFNOS) structure is studied and compared to the conventional Silicon-Oixde-Nitride-Oxide-Silicon (SONOS) capacitor. The ferroelectric blocking layer is SrBiNbO (SBN with Sr/Bi ratio 1-x/2+x) with the thickness of 200 nm and is fabricated by the RF sputter. The memory windows of MFNOS and SONOS capacitors with sweep voltage from +10 V to -10 V are 6.9 V and 5.9 V, respectively. The effect of ferroelectric blocking layer and charge trapping on the memory window was discussed. The retention of MFNOS capacitor also shows the 10-years and longer retention time than that of the SONOS capacitor. The better retention properties of the MFNOS capacitor may be attributed to the charge holding effect by the polarization of ferroelectric layer.