• Korean Journal of Materials Research
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• v.21 no.4
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.190-190
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• 2003

여러원소 (Sb, F 등)를 도핑한 SnO$_2$ 투명전도막은 여러 가지 훌륭한 특성으로 Solar cell, heat mirrors, gas sensors, liquid crystal displays, thick film resistor 등과 같이 넓은 범위에서 응용되고 있다. 본 연구에서는 Sb 도핑된 Tin Oxide films이 Sol-gel dip coating법에 의해 준비되었다. SnO$_2$:Sb 용액은 SnC1$_2$ 와 SbC1$_3$ Power를 알코올에 용해하여 Ethylene glycol 와 Citric acid를 첨가하여 합성하였다. 막의 상형성은 XRD와 SEM(Scanning electron microscope)에 의해서 분석되었으며, 특성분석은 투과율(UV/VIS Spectrophotometer)과 표면전기저항(four point probe)으로 분석되었다. SiO$_2$ barrier이 SnO$_2$:Sb 막의 특성에 미치는 영향을 확인하기 위하여 XPS(X-ray photoelectron spectroscopy) 분석이 적용되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.189-194
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• 2013

Single phase crystalline powders of $Mg_3Sb_2$ and $Mg_3Bi_2$ were prepared by mechanical alloying Mg, Sb and Bi metals with planetary ball milling for 24~48 h. The compositions of starting raw materials for single phase $Mg_3Sb_2$ and $Mg_3Bi_2$ were 3Mg : 1.8Sb and 3Mg : 1.6Bi, respectively. Two types of mechanically alloyed powders obtained were mixed at some ratios for the fabrication of $Mg_3Sb_2-Mg_3Bi_2$ composites and then hot pressed under uniaxial pressure of 70 MPa at 723 K for 1 h. The main phase of composites was a stable phase similar to $Mg_3Bi_2$ phase with a small amount of Bi phase. The distributions of Sb and Bi elements on EDS mapping images were discontinuous and their compositional contours were clear, which means that the hot pressed specimens were composites composed of two compounds of $Mg_3Sb_2$ and $Mg_3Bi_2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.215-215
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.911-917
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• 2002

0.5 at% $Na_2$Te-doped ($Pb_{0.7}Sn_{0.3}$)Te and ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ powders were fabricated by mechanical alloying process. 0.5 at% Na$_2$Te-doped ($Pb_{0.7}Sn_{0.3}$)Te powders were charged at one end of mold and ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ powders were charged at the other end of a mold. Then these powders were hot-pressed to form p-type ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ functional gradient materials with the segment ratios (the ratio of ($Pb_{0.7}Sn_{0.3}$)Te to ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ ) of 1:2, 1:1, and 2:1. Power generation characteristics of the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ were measured. When the temperature difference ΔT at both ends of the specimen was larger than $300^{\circ}C$, the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ with the segment ratios of 1:2 and 1:1 exhibited larger output power than those of the ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ and 0.5 at% $Na_2$ Te-doped ($Pb_{0.7}Sn_{0.3}$)Te alloys. The maximum output power of the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ predicted with the measured Seebeck coefficient and the estimated electrical resistivity was in good agreement with the measured maximum output power.

• Advances in materials Research
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• v.7 no.1
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• pp.73-81
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• 2018

$TiO_2/CH_3NH_3Pb_{1-x}Sb_xI_{3-3x}Br_{3x}-based$ photovoltaic devices were fabricated by a spin-coating method using mixture solutions with $SbBr_3$. Effects of $SbBr3$, CsI or RbBr addition to $CH_3NH_3PbI_3$ precursor solutions on the photovoltaic properties where investigated. The short-circuit current densities and photoconversion efficiencies were improved by adding a small amount of $SbBr_3$, CsI or RbBr to the perovskite phase, which would be due to the doping effect of Sb, Br and Cs/Rb atom at the Pb, I and $CH_3NH3$ sites, respectively.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.65-70
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• 1991

The effect of inclusion particles on the microstructure development and electrical characteristics in the systems $ZnO-Bi_2O_3-CoO-Sb_2O_3\;and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3 were investigated. The growth of ZnO grains, which was controlled by the spinel particles during sintering, decreased with increasing amount of spinel particles. Addition of $Cr_2O_3(0.5mol\%) increased the breakdown voltage without affecting the non-linear characteristics. The calculated barrier voltage of the $ZnO-Bi_2O_3-CoO-Sb_2O_3\;-and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3$ systems were about 3.1V and 2.9V, respectively.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.675-681
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• 2012

We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

• ETRI Journal
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• v.34 no.6
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.