• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.11a
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• pp.449-452
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• 2009

In order to improve incombustibility of EPDM(Ethylene propylene diene monomer)-based rubber, inorganic materials as $Al(OH)_3$ and $Sb_2O_3$ were added. The mechanical and thermal properties have been measured for vulcanized rubber loaded with different concentrations of $Al(OH)_3$ and $Sb_2O_3$. As inorganic material contents increases from 5phr to 30phr, the specific gravity and hardness increase while elongation at break decreases. This study performed incombustibility test and thermal analysis through TGA(Thermogravimetric Analyzer). As a results, incombustible and thermal properties of EPDM-based rubber were improved as $Al(OH)_3$ and $Sb_2O_3$ contents increase.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.82-82
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• 1998

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.177-182
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• 2015

Sb-doped $SnO_2$(ATO) thin films were prepared using electrospinning. To investigate the optimum properties of the electrospun ATO thin films, the deposition numbers of the ATO nanofibers(NFs) were controlled to levels of 1, 2, 4, and 6. Together with the different levels of deposition number, the structural, chemical, morphological, electrical, and optical properties of the nanofibers were investigated. As the deposition number of the ATO NFs increased, the thickness of the ATO thin films increased and the film surfaces were gradually densified, which affected the electrical properties of the ATO thin films. 6 levels of the ATO thin film exhibited superior electrical properties due to the improved carrier concentration and Hall mobility resulting from the increased thickness and surface densification. Also, the thickness of the samples had an effect on the optical properties of the ATO thin films. The ATO thin films with 6 deposited levels displayed the lowest transmittance and highest haze. Therefore, the figure of merit(FOM) considering the electrical and optical properties showed the best value for ATO thin films with 4 deposited levels.

• KSTLE International Journal
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• v.2 no.2
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• pp.150-153
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• 2001

The effects of humidity on friction performance of automotive brake materials were studied using a pad-on-disk type friction tester. Three different friction materials based on a simple formulation were investigated by changing the solid lubricant graphite, MoS$_2$, and Sb$_2$S$_3$. Friction materials without solid lubricants were also examined to study the effect of other ingredients in the matrix on humidity. The friction material containing graphite was strongly affected by the humidity showing lower friction coefficient at high humidity level than other conditions. On the other hand, the friction material containing MoS$_2$exhibited higher friction coefficient at initial stage under high humidity level. The friction material without solid lubricant or with Sb$_2$S$_3$ was not affected by humidity conditions. However, the friction material containing barite showed strong speed dependence.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.367-375
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• 2016

A novel strategy for the synthesis of $CoSb_2$ nanoparticles is demonstrated via preparation of novel organometallic complexes. Hydrated cobalt oleate (CoOl) and non-hydrated antimony oleate (SbOl) complexes are synthesized as precursors. The $CoSb_2$ nanoparticles are prepared by hot injection, which involves thermolysis of CoOl and SbOl in a non-coordinating solvent at $320^{\circ}C$. The coordination modes and distinct thermal behaviors of the intermediate non-hydrated SbOl complexes are comparatively investigated by thermo-analytical techniques. When the reaction temperature is increased, the particle size is found to increase linearly. The crystallinity of the $CoSb_2$ nanoparticles prepared at $250^{\circ}C$ is amorphous phase without any peaks. $CoSb_2$ structural peaks start to appear at $300^{\circ}C$ and dominant peaks with high crystallinity are synthesized at $320^{\circ}C$. The potential chemical structures of non-hydrated SbOl and their reaction mechanisms by thermolysis are elucidated. The elemental composition and crystallographic structure of $CoSb_2$ nanoparticles suggest a bimodal interaction of the organic shell and the nanoparticle surface, with a chemical absorbed inner layer and physically absorbed outer layer of carboxylic acid.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

• Imaging Science in Dentistry
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• v.48 no.4
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• pp.277-281
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• 2018

Purpose: This study was performed to investigate the relationship between sleep bruxism(SB) and pulpal calcifications in young women. Materials and Methods: A total of 100 female participants between 20 and 31 years of age who were referred to our radiology clinic for a dental check-up, including 59 SB and 41 non-SB patients, were sampled for the analysis. SB was diagnosed based on the American Academy of Sleep Medicine criteria. All teeth were evaluated on digital panoramic radiographs to detect pulpal calcifications, except third molars, teeth with root canal treatment, and teeth with root resorption. Binary logistic regression analysis was used to determine the risk factors for pulpal calcifications. The Spearman correlation coefficient was applied and the Pearson chi-square test was used for categorical variables. To test intra-examiner reproducibility, Cohen kappa analysis was applied. P values <.05 were considered to indicate statistical significance. Results: A total of 2800 teeth were evaluated (1652 teeth from SB patients and 1148 from non-SB patients), and 61% of patients had at least 1 dental pulpal calcification. No statistically significant relationship was found between SB and pulpal calcifications (P>0.05). In SB patients, the total number of pulpal calcifications was 129, while in non-SB patients, it was 84. Binary logistic analysis showed that SB was not a risk factor for the presence of pulpal calcifications(odds ratio, 1.19; 95% CI, 0.52-2.69, P>.05). Conclusion: No relationship was found between SB and pulpal calcifications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.2-24.2
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• 2009

Indium Antimonide(InSb)는 $3{\sim}5\;{\mu}m$대 적외선 감지영역에서 기존 HgCdTe(MCT)를 대체할 물질로 각광받고 있다. 1970년대부터군사적 용도로 미국, 이스라엘 등 일부 선진국에서 연구되기 시작했으며,이온주입, MOCVD, MBE 등 다양한 공정을 통해 제작되어 왔다. InSb 적외선 감지소자는 $3{\sim}5{\mu}m$대에서 HgCdTe와 성능은 대등한데 반해, 기판의 대면적화와 저렴한 가격, 우주공간 및 야전에서 소자 동작의안정성 등으로 InSb적외선 감지기는 냉각형 고성능 적외선 감지영역에서 HgCdTe를 대체해 가고 있다. 하지만 InSb는 77 K에서 0.225eV의 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb적외선 수광 소자 연구의 주요이슈 중 하나가 되어왔다. 그 동안 PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 절연막에 대한 연구가 진행되었고[1,2], 절연막과 반도체 사이 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 공정개발이 이루어졌다[3]. 하지만 InSb 적외선 감지기술은 국방 및 우주개발의 핵심기술중 하나로 그 기술의 이전이 엄격히 통제되고 있으며, 현재도 미국과 이스라엘, 일본, 영국 등 일부 선진국 만이 기술을 확보하고 있고, 국내의 경우 연구가 매우 취약한 실정이다. 따라서 본 연구에서는 InSb 적외선 감지기의 암전류를 제어하기 위한 낮은 계면트랩밀도를 갖는 절연막 증착 공정을 찾고자 하였다. 본 연구에서는 n형 (100) InSb 기판 ($n=0.2{\sim}0.85{\times}10^{15}cm^{-3}$ @ 77K)에 PECVD를 이용하여 $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. $SiO_2$는 160, 200, $240^{\circ}C$에서 $Si_3N_4$는 200, $300^{\circ}C$에서 증착하였다. Atomic Force Microscopy(AFM) 사진으로 확인한 결과, 모든 샘플에서표면거칠기가 ~2 nm의 평탄한 박막을 얻을 수 있었다. Capacitance-Voltage 측정(77K)을 통해 절연막 특성을 평가하였다. $SiO_2$와 $Si_3N_4$ 모두에서 온도가 증가할수록 벌크트랩밀도가 감소하는 경향을 볼 수 있었는데, 이는 고온에서 증착할 수록 박막 내의 결함이 감소했음을 의미한다. 반면계면트랩밀도는 온도가 증가함에 따라, 1011 eV-1cm-2 대에서 $10^{12}eV^{-1}cm^{-2}$ 대로 증가하였는데, 이는 고온에서 증착할 수 록 InSb 표면에서의 결함은 증가하였음을의미한다. 암전류에 큰 영향을 주는 것은 계면트랩밀도 이므로, $SiO_2$와 $Si_3N_4$ 모두 $200^{\circ}C$이하의 저온에서 증착시켜야 함을 확인할 수 있었다.