Browse > Article
http://dx.doi.org/10.3740/MRSK.2015.25.4.177

Electrical and Optical Properties of Sb-Doped SnO2 Transparent Conductive Films Fabricated by Using Electrospinning  

An, Ha-Rim (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Koo, Bon-Ryul (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Ahn, Hyo-Jin (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Lee, Tae-Kum (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.25, no.4, 2015 , pp. 177-182 More about this Journal
Abstract
Sb-doped $SnO_2$(ATO) thin films were prepared using electrospinning. To investigate the optimum properties of the electrospun ATO thin films, the deposition numbers of the ATO nanofibers(NFs) were controlled to levels of 1, 2, 4, and 6. Together with the different levels of deposition number, the structural, chemical, morphological, electrical, and optical properties of the nanofibers were investigated. As the deposition number of the ATO NFs increased, the thickness of the ATO thin films increased and the film surfaces were gradually densified, which affected the electrical properties of the ATO thin films. 6 levels of the ATO thin film exhibited superior electrical properties due to the improved carrier concentration and Hall mobility resulting from the increased thickness and surface densification. Also, the thickness of the samples had an effect on the optical properties of the ATO thin films. The ATO thin films with 6 deposited levels displayed the lowest transmittance and highest haze. Therefore, the figure of merit(FOM) considering the electrical and optical properties showed the best value for ATO thin films with 4 deposited levels.
Keywords
Sb-doped $SnO_2$; electrospinning; transparent conductive films; surface densification; electrical and optical properties;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang and W. W. Wu, Appl. Phys. Lett., 104, 111909 (2014).   DOI   ScienceOn
2 X. Lu, Y. Chang, M. Xu and B. Peng, Adv. Mater. Res., 936, 439 (2014).   DOI
3 E. Elangovan, M. P. Singh and K. Ramamurthi, Mater. Sci. Eng. B, 113, 143 (2004).   DOI
4 A. Jain, P. Sagar and R. M. Mehra, Mater. Sci-Poland, 25, 1 (2007).
5 W. J. Jeong and G. C. Park, Sol. Energy Mater. Sol. Cells, 65, 37 (2001).   DOI   ScienceOn
6 H. R. An, H. J. Ahn and J. W. Park, Ceram. Int., 41, 2253 (2015).   DOI   ScienceOn
7 J. Liu, A. W. Hains, J. D. Servaites, M. A. Ratner and T. J. Marks, Chem. Mater., 21, 5258 (2009).   DOI   ScienceOn
8 S. K. Park, J. I. Han, W. K. Kim and M. G. Kwak, Thin Solid Films, 397, 49 (2001).   DOI   ScienceOn
9 S. K. Hau, H. L. Yip, J. Zou and A. Y. Jen, Org. Electron., 10, 1401 (2009).   DOI   ScienceOn
10 S. Calnan and A. N. Tiwari, Thin Solid Films, 518, 1839 (2010).   DOI   ScienceOn
11 T. R. Giraldi, M. T. Escote, M. I. B. Bernardi, V. Bouquet, E. R. Leite, E. Longo and J. A. Varela, J. Electroceram., 13, 159 (2004).   DOI
12 K. S. Kim, S. Y. Yoon, W. J. Lee and K. H. Kim, Surf. Coat. Technol., 138, 229 (2001).   DOI   ScienceOn
13 F. Chen, N. Li, Q. Shen, C. Wang and L. Zhang, Sol. Energy Mater. Sol. Cells, 105, 153 (2012).   DOI
14 D. Zhang, L. Tao, Z. Deng, J. Zhang and L. Chen, Mater. Chem. Phys., 100, 275 (2006).   DOI   ScienceOn
15 J. Montero, C. Guillen and J. Herrero, Sol. Energy Mater. Sol. Cells, 95, 2113 (2011).   DOI   ScienceOn
16 D. C. Woo, C. Y. Koo, H. C. Ma and H. Y. Lee, Trans. Electr. Electron. Mater., 13, 241 (2012).   DOI   ScienceOn
17 J. W. Lim, B. Y. Jeong, H. G. Yoon, S. N. Lee and J. H. Kim, J. Nanosci. Nanotechnol., 12, 1675 (2012).   DOI   ScienceOn
18 S. Ramakrishna, K. Fujihara, W. -E. Teo, T. Yong, Z. Ma and R. Ramaseshan, Mater. Today, 9, 40 (2006).
19 N. Leon-Brito, A. Melendez, I. Ramos, N. Pinto and J. J. Santiago-Aviles, J. Phys. Conf. Ser., 61, 683 (2007).   DOI   ScienceOn
20 B. R. Koo and H. J. Ahn, Ceram. Int., 40, 4375 (2014).   DOI   ScienceOn
21 E. Elangovan, M. P. Singh and K. Ramamurthi, Mater. Sci. Eng. B, 113, 143 (2004).   DOI
22 Y. G. Her, J. Y. Wu, Y. R. Lin and S. Y. Tsai, Appl. Phys. Lett., 89, 043115 (2006).   DOI   ScienceOn
23 R. Das and S. Ray, J. Phys. D: Appl. Phys., 36, 152 (2003).   DOI