• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.41-47
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• 2015

In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2008.11a
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• pp.464-467
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• 2008

성능이 우수한 다성분계 전극을 개발하기 위하여 Pt, Ru, Sn, Sb 및 Gd의 5 종류 금속을 이용하여 1성분계 전극의 성능과 산화제 생성량 및 2성분계 전극의 성능과 산화제 생성 경향을 고찰하여 다음의 결과를 얻었다. 1. RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Sn/Ti > Gd/Ti 전극의 순서로 나타났으나 단위 전력당 2분간 제거된 RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Gd/Ti > Sn/Ti 전극의 순서로 나타났다. 생성된 산화제 농도는 ClO$_2$ > free Cl > H$_2$O$_2$ > O$_3$의 순서였으며 Gd/Ti 전극의 경우 산화제가 거의 생성되지 않는 것으로 나타났다. 모든 전극에서 OH 라디칼이 거의 생성되지 않는 것으로 나타났다. Ru/Ti와 Sb/Ti 전극의 높은 RhB 분해와 산화제 생성 농도는 정확하지는 않지만 상관관계가 있는 것으로 나타났다. 2. Ru계 2성분 전극(Ru-Gd/Ti, Ru-Pt/Ti, Ru-Sn/Ti 및 Ru-Sb/Ti)은 모두 1성분계 전극보다 RhB 분해성능이 높아지는 것으로 나타났으며, Ru계 2성분 전극 중 가장 성능이 우수하였던 전극은 Ru:Sn=9:1 전극으로 나타났다. Sn-Sb/Ti 전극은 Sn:Sb=1:9의 전극 성능이 우수한 것으로 나타났으나 Sb/Ti 전극과의 차이는 크지 않은 것으로 나타났다. Pt계 전극(Pt-Gd/Ti, Pt-Sn/Ti, Pt-Sb/Ti)은 대체로 두 성분 혼합에 따른 RhB 분해효과 상승은 없는 것으로 나타났다. 2성분계 전극 중 RhB 제거 성능이 가장 우수하였던 Ru:Sn=9:1 전극에서 4종류의 산화제 생성 농도가 높은 것으로 나타났다. Ru:Pt=9:1 전극은 RhB 분해 성능이 5 전극 중 가장 낮았으며, 산화제도 생성량이 가장 적은 것으로 나타났다. Ru-Sn/Ti 계 전극의 RhB 분해 성능과 산화제 생성 농도가 실험한 모든 1, 2성분계 전극에서 높은 것으로 나타나 향후 3, 4성분계 전극 제조시 이를 바탕으로 제조하고 다른 물질들은 보조재료로서 사용할 필요성이 있는 것으로 사료되었다.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.276-279
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• 2008

In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.21-27
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• 2009

In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.6
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• pp.5-8
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• 1975

An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4${\times}10^{-2}{\Omega}$ and $4.5\textrm{cm}^3$/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus.

• The Journal of Advanced Prosthodontics
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• v.9 no.1
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• pp.38-44
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• 2017

PURPOSE. The objective of this study was to investigate the effect of surface treatments on microtensile bond strengths (MTBSs) of two types of indirect resin composites bonded to a conventional direct resin composite. MATERIALS AND METHODS. Indirect resin composite blocks of Ceramage and SR Nexco were prepared in a plastic mold having a dimension of $10{\times}10{\times}4\;mm$. These composite blocks were divided into three groups according to their surface treatments: Group1: Sandblast (SB); Group2: Sandblast and ultrasonically clean (SB+UL); Group3: Sandblast plus silane (SB+SI). After bonding with direct resin composite, indirect-direct resin composite blocks were kept in distilled water for 24 hours at $37^{\circ}C$ and cut into microbars with the dimension of $1{\times}1{\times}8\;mm$. Microbar specimens (n = 40 per group) were loaded using a universal testing machine. Failure modes and compositions were evaluated by SEM. The statistical analyses of MTBS were performed by two-way ANOVA and Dunnett's test at ${\alpha}=.05$. RESULTS. Surface treatments and brands had effects on the MTBS without an interaction between these two factors. For SR Nexco, the MTBSs of SB and SB+SI group were significantly higher than that of SB+UL. For Ceramage, the MTBSs of SB and SB+SI were significantly higher than that of SB+UL. The mean MTBS of the Ceramage specimens was significantly higher than that of SR Nexco for all surface treatments. CONCLUSION. Sandblasting with or without silane application could improve the bond strengths of repaired indirect resin composites to a conventional direct resin composite.

• Food Science of Animal Resources
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• v.31 no.3
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• pp.428-435
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• 2011

This study was conducted to investigate the effect of immersion treatment using lactic acid (LA) and sodium benzoate (SB) on the physicochemical quality and freshness of spent hen breast meats. A total of 135 spent hen breast meats were subjected to 9 different treatments using various concentrations of LA and/or SB in sterile DW. The 9 treatment groups were as follows: Control, sterile DW without LA or SB; T1, 1% LA; T2, 2% LA; T3, 4% LA; T4, 1% LA and 0.1% SB; T5, 2% LA and 0.1% SB; T6 2% LA and 0.2% SB; T7, 2% LA and 0.4% SB; T8, 4% LA and 0.2% SB, respectively. All groups were kept at 4oC for 15 d. The microbial counts in the control group gradually increased during storage, but those for the treated groups were significantly lower than the control or were not detected. The pH values of the control were significantly higher than those of the treated groups (p<0.05). In the color measurements, the lightness ($L^*$) and yellowness ($b^*$) values increased during storage and the redness ($a^*$) values decreased (p<0.05). The K-value and volatile basic nitrogen of the treated groups were significantly lower than those of the control group (p<0.05). Overall, the combined results of this study indicate that LA and SB could be used as favorable preservatives for spent hen breast meats to extend their shelf-life during refrigerated storage.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.68-74
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• 2015

The porous $Mg_3Sb_2$ based compounds with 60~70% of relative density were prepared by powder compaction at room temperature and reactive liquid phase sintering at 1023 K for 4hrs. The stoichiometric $Mg_3Sb_2$ compounds were synthesized from elemental Sb and Mg powder in the mixing range of 61~63 at% Mg. The increased scattering effect due to the micro-pores reduced the mobility of the charge carrier and the phonon, which caused the electrical conductivity and the thermal conductivity to decrease, respectively. But the scattering effect was greater for the electrical conductivity than for the thermal conductivity. Excess Mg alloyed in the $Mg_3Sb_2$ compounds decreased the electrical conductivity, but had no effect on the thermal conductivity. On the other hand, the large increase of the Seebeck coefficient was the result of a decrease in the charge carrier density due to the excess Mg. Dimensionless figure of merit of the porous $Mg_3Sb_2$ compound reached a maximum value of 0.28 at 61 at% Mg. The obtained value was similar to that of $Mg_3Sb_2$ compounds having little pores.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.34-41
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• 2005

We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

• Journal of Korea Foundry Society
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• v.4 no.4
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• pp.20-29
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• 1984

It is very important to obtain gray and ductile cast irons with completely pearlitic structure by addition more economical alloying elements. In this study, 9 melts of gray iron and 5 melts of Mg-treated ductile cast iron were made according to Sb content (0-0.08% Sb). Each melt were casted to ${\phi}20mm$ test bars in sand mold under the same condition and inspected microstructure, mechanical and thermal properties. The results obtained from this study are as follows: 1. It is confirmed that Sb should be an economical, simple and useful additive for avoiding ferrite in gray and even in ductile cast irons. 2. For gray cast iron, the recommended ladle addition of metallic Sb amounts to 0.05%. At these levels, Sb has no detrimental influence on the mechanical properties of gray cast irons, which are normally modified according to their pearlite content without increasing the chilling tendency. 3. Despite its adverse influence on graphite shape in ductile iron, Sb can be used as a pearlite stabilizing alloying element even in the case of Mg - treated iron. The quantity to be added does not exceed 0.04% in the case of thinwalled castings. 4. The nodule count is increased very much and the shape of graphite particles become remarkably spheroidal. The matrix may be fully pearlitized, except for thin - walled castings, because the high nodule count results inevitably in some ferrite. 5. The $Ac_1$ and pearlite decomposition temperature are rised in accordance with increasing of additive Sb amount.