• Journal of Korea Foundry Society
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• v.7 no.1
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• pp.53-59
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• 1987

In order to study the infuence of Sb addition on the compacted vermicular graphite cast iron(C/V) and gray cast iron(GC), these specimen which had different Sb content(0-0, 1wt.%) were prepared. these specimen were tested for microstructure and mechanical properties. The result from this study are as follows. For C/V and GC, the microstructure of graphite appeared to be finer with increasing Sb content more than 0.06wt.% Ferrite disappeared from the matrix with addition of Sb more than 0.06wt.% in GC and more than 0.08wt.% in C/V. The size of the eutectic cell in GC was 4.5 to 7 times larger than that in C/V, but the decreasing tendancy of its size was more remarkable in GC than in C/V with increasing Sb content. The abrasion speed corresponding to the maximum amount of abrasion in the nabrasion test was found to be 1.37m/sec. GC sample weared 3.6 to 21 times faster than those of C/V did. the amount of abrasion demeased remarkably with Sb addition, and the abrasion rate was constant with Sb content over 0.04wt.%

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.351-354
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• 2006

[ $Co_{1-x}Fe_xSb_3$ ] skutterudites were synthesized by encapsulated induction melting and their thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the subsequent heat treatment at 773 K for 24 hours in vacuum. However, ${\delta}-CoSb_3$ was decomposed to FeSb2 and Sb when $x{\leq}0.3$, which means that the solubility limit of Fe to Co is x<0.3. The positive signs of Seebeck coefficients for all Fe-doped specimens revealed that Fe atoms acted as p-type dopants by substituting Co atoms. Thermoelectric properties were remarkably enhanced by Fe doping and optimum composition was found to be $Co_{0.7}Fe_{0.3}Sb_3$ in this study.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.205-206
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• 2012

$InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.306-312
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• 2013

Single-crystalline InSb nanowire was synthesized on $SiO_2$ wafer via vapor-liquid-solid (VLS) mechanism using chemical vapor deposition method. According to the source container system (open or close) which contain InSb powder and $SiO_2$ wafer, the single-crystalline InSb nanowires have different growth mechanisms. Structural characterization of the InSb nanowires was examined by scanning electron microscope (SEM). Composition of the nanowires was investigated using x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). This study demonstrates that length and diameter of the InSb nanowires are long and thick using open-boat system by VLS and additional vapor-solid (VS) mechanisms, because open-boat system can carry a large amount of vapor-phase InSb precursor than close-boat system.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Journal of the Korean Chemical Society
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• v.38 no.5
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• pp.359-365
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• 1994

The crystal stucture of hexapotassium undecahydrogen tetratungsto hexaantimonate(V) tetrahydrate has been determined from single crystal X-ray diffraction data. Crystal data are as follows: $K_6H_{12}[Sb_6W_4O_{36}]{\cdot}4H_2O$, Fw = 2360.62, tetragonal, I$4_1$/a, a = 10.799(1) ${\AA}$, c = 35.244(5) ${\AA}$, V = 4110.1(7) ${\AA}^3$, Z = 4, $D_x$ = 3.82 g$cm^{-3}$, $\mu(MoK\alpha)$ = 160.15 $cm^{-1}$, T = 293 K, final R = 0.0356 for 2400($F_0 > 3\sigma(F_0))$ independent reflections. The $[H_{12}Sb_6W_4O_{36}]^{-6}$ polyanion independently consists of one tungsten, two antimony, and nine oxygen atoms and belongs to the $\bar4(S_4)$ point group. This polyanion is formed by two open octahedra five membered ring of Sb(3)$O_6-W(1)O_6-Sb(2)O_6-W(1)O_6-Sb(3)O_6$ which is connected at right angle. The Sb-W, Sb-O, and W-O bond distances range from 3.2304(9) to 3.2403(5) $\AA$, 1.745(8) to 2.334(6) $\AA$, and 1.914(7) to 2.039(7) $\AA$, respectively.

• Applied Chemistry for Engineering
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• v.31 no.6
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• pp.646-652
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• 2020

In this study, an NH3-selective catalytic reduction (SCR) experiment was performed to control NOx in the temperature range of 200~500 ℃. The reaction activity experiment was conducted by varying the firing temperature of Sb/TiO2 when using V/Sb/TiO2 composite as a catalyst. As a result, when the sintering temperature of Sb/TiO2 was 600 ℃, the efficiency was the best, and it was confirmed that the NOx conversion rate was close to 80% at the reaction temperature of 250 ℃. H2-temperature programmed reduction (TPR), X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) analyses were employed to derive the cause of the activity enhancement when prepared at different firing temperatures as described above. As a result, when the sintering temperature of Sb/TiO2, which showed an excellent activity, was prepared at 600 ℃, it was confirmed that VSbO4 was generated. This indicates that the non-stoichiometric species of V increased, resulting in the excellent NOx conversion rate of V/Sb/TiO2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.367-375
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• 2016

A novel strategy for the synthesis of $CoSb_2$ nanoparticles is demonstrated via preparation of novel organometallic complexes. Hydrated cobalt oleate (CoOl) and non-hydrated antimony oleate (SbOl) complexes are synthesized as precursors. The $CoSb_2$ nanoparticles are prepared by hot injection, which involves thermolysis of CoOl and SbOl in a non-coordinating solvent at $320^{\circ}C$. The coordination modes and distinct thermal behaviors of the intermediate non-hydrated SbOl complexes are comparatively investigated by thermo-analytical techniques. When the reaction temperature is increased, the particle size is found to increase linearly. The crystallinity of the $CoSb_2$ nanoparticles prepared at $250^{\circ}C$ is amorphous phase without any peaks. $CoSb_2$ structural peaks start to appear at $300^{\circ}C$ and dominant peaks with high crystallinity are synthesized at $320^{\circ}C$. The potential chemical structures of non-hydrated SbOl and their reaction mechanisms by thermolysis are elucidated. The elemental composition and crystallographic structure of $CoSb_2$ nanoparticles suggest a bimodal interaction of the organic shell and the nanoparticle surface, with a chemical absorbed inner layer and physically absorbed outer layer of carboxylic acid.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.485-490
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• 2004

Silver-needle shaped crystals of $KLa_2Sb_3S_9$ from $K_2S_x$ flux and $KSm_2Sb_3Se_8$ from NaCl/KCl flux reactions were obtained and their crystal structures were determined by the single crystal X-ray diffraction method. $KLa_2Sb_3S_9$ crystallizes in the orthorhombic noncentrosymmetric space group $P2_12_12_1$ (No.19) with a unit cell of a = 4.220(3) ${\AA}$, b = 24.145(2) ${\AA}$, c = 14.757(5) ${\AA}$ and Z = 4. $KSm_2Sb_3Se_8$ crystallizes in the orthorhombic space group Pnma (No.62) with a unit cell of a = 16.719(3) ${\AA}$, b = 4.1236(8) ${\AA}$, c = 22.151(4) ${\AA}$ and Z = 4. Both structures have three-dimensional tunnel frameworks filled with $K^+$ ions. $KSm_2Sb_3Se_8$ is an ordered version of $ALn_{1{\pm}X}B_i{4{\pm}X}S_8$, and it is made up of NaCl-type and $Gd_2S_3$-type fragments. $KLa_2Sb_3S_9$ also contains building fragments similar to those of $KSm_2Sb_3Se_8$, however, there are chalcogen-chalcogen bonds in the $Gd_2S_3$-type fragment. The formula of $KLa_2Sb_3S_9$ can be described as $(K^+ )(La^{3+})_2(Sb^{3+})^3(S^{2-})_7(S_2^{2-})$.