• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.127-132
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• 2009

We have investigated the intrinsic defects remaining in epitaxial GaSb layers grown on SI-GaAs substrates compared to those in bulk GaSb crystal substrate, which is a basic material of Sb-based strained-layer superlattice infrared photodetectors. From the functional dependence of the band-to-band transition energy of the photomuminescence (PL) spectra observing up to near room-temperature (250 K), the temperature parameters of [$E_o$, $\alpha$, $\beta$] of undoped GaSb crystal are determined by using the Varshni empirical equation describing the temperature variation of the bandgap energy. Additionally to the antisite-Ga ([$Ga_{Sb}$]) with an ionization energy of 29 meV that is well known to a major intrinsic defect in GaSb, epitaxial GaSb layers show a pair of deep states at the emission energy of 732/711 meV that may be related with a complex of two antisite-Ga and antisite-Sb ([$Ga_{Sb}-Sb_{Ga}$]). Based on the analysis of the temperature and the excitation-power dependences of PL, it suggests that excess-Sb substitutes Ga-site by self-diffusion and two anti sites of [$Ga_{Sb}$] and [$Sb_{Ga}$] could form as a complex of [$Ga_{Sb}-Sb_{Ga}$] in GaSb epilayers grown under Sb-rich condition.

• Economic and Environmental Geology
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• v.26 no.3
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• pp.327-335
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• 1993

Phase relations in the system Pd-Sb-Te were investigated at $1000^{\circ}$, $800^{\circ}$, and $600^{\circ}C$, using the sealed-capsule technique; the quenched products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. At $1000^{\circ}C$, the solid phases Pd, $Pd_{20}Sb_7$, $Pd_8Sb_3$, $Pd_{31}Sb_{12}$, and $Pd_5Sb_2$ are stable with a liquid phase that occupies most of the isothermal diagram. Additional solid phases at $800^{\circ}C$ are $Pd_5Sb_3$, PdSb, $Pd_8Te_3$, $Pd_7Te_3$, and a continuous $Pd_{20}Te_7-Pd_{20}Sb_7$ solid solution becomes stable. At $600^{\circ}$, $PdSb_2$, $Pd_{17}Te_4$, $Pd_9Te_4$, PdTe, $PdTe_2$, $Sb_2Te_3$, and Sb and continuous PdSb-PdTe and $PdTe-PdTe_2$ solid solutions are stable. All the solid phases exhibit solid solution, mainly by substitution between Sb and Te to an extent that varies with temperature of formation. The maximum substitution (at.%) of Te for Sb in the Pd-Sb phases is: 44.3 in $Pd_8Sb_3$, 52.0 in $Pd_{31}Sb_{12}$, 46.2 in $Pd_5Sb_2$ at $800^{\circ}C$; 15.3 in $Pd_5Sb_3$, 68.3 in $PdSb_2$ at $600^{\circ}C$. The maximum substitution (at.%) of Sb for Te in the Pd-Te phases is 34.5 in $Pd_5Sb_3$ at $800^{\circ}C$, and 41.6 in $Pd_7Te_3$, 5.2 in $Pd_{17}T_4$, 12.4 in $Pd_9Te_4$, and 19.1 in $PdTe_2$ at $600^{\circ}C$. Physical properties and X-ray data of the synthetic $Pd_9Te_4$, PdTe, $PdTe_2$, $Pd_8Sb_3$, PdSb, and $Sb_2Te_3$ correspond very well with those of telluropalladinite, kotulskite, merenskyite, mertieite II, sudburyite, and tellurantimony, respectively. Because X-ray powder diffraction data consistently reveal a 310 peak ($2.035{\AA}$), the $PdSb_2$ phase is most probably of cubic structure with space group $P2_13$. The X-ray powder pattern of a phase with PdSbTe composition, synthesized at $600^{\circ}C$, compares well with that of testibipalladite. Therefore, testibiopalladite may be a member of the $PdSb_2-Pd(Sb_{0.32}Te_{0.68})$ solid solution series which is cubic and $P2_13$ in symmetry. Thus the ideal fonnula for testibiopalladite, presently PdSbTe, must be revised to PdTe(Sb, Te). Borovskite($pd_3SbTe_4$) has not been found in the synthetic system in the temperature range $1000^{\circ}-600^{\circ}C$.

• Journal of the Mineralogical Society of Korea
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• v.8 no.1
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• pp.13-22
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• 1995

Phase relations of the Pd-Sb system were investigated using the sealed-capsule technique; the quenched run products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. Eight binary phases were confirmed to exist in the system: Pd20Sb7, Pd31Sb12, Pd8Sb3 (mertieite II), Pd5Sb2, Pd2Sb, Pd5Sb3, PdSb (sudburyite), and PdSb2, (unnamed PdSb2), The X-ray powder diffraction data of all the phases, except for Pd5Sb3, however, may be indexable on an orthorhombic cell, space group Cmc2, with a=3.362(1), b=17.484(7), c=6.934(2)$\AA$. Some physical properties as well as re-determined cell parameters are newly established. A revised phase relations of the Pd-Sb system are presented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.207-212
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• 2012

A single phase $Mg_3Sb_2$ alloy was synthesized by melting the mixture of Mg and Sb metal powders at 1173 K. The figure of merit of the $Mg_3Sb_2$ prepared by melting method increased with temperature and showed a value of $2.39{\times}10^{-2}$ at 593 K. When the $Mg_3Sb_2$ powders were milled at high speed in a planetary ball mill for 12~48 h, Zintle phase ($Mg_3Sb_2$) was maintained as a main phase, but its crystallinity became deteriorated and elemental Sb phase appeared. Sb phase free $Mg_3Sb_2$ could be obtained by the mechanical alloying of high speed ball milling for 24 h using elemental Mg and Sb powder mixtures.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.18-24
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• 1993

The phase diagram of the Pt-Sb system was reinvestigated, using the conventional sealedcapsule technique. The identification of phases present in the reaction products was made by reflected light microscopy, X-ray diffraction and electron microprobe analysis. The existence of compounds, Pt5Sb, Pt3Sb, Pt3Sb2, PtSb and PtSb5 was confirmed. A new phase, Pt5Sb with a composition of 83at% Pt and tetragonal structure of the lattice parameters a=3.948(3), c=16.85(1)A, was found. The X-ray powder data of Ptsb may be indexable on a tetragonal cell with a=3.9455(7), c=16.959(5)A. PtSb is stoichiometric up to 800t and becomes Pt-deficient as much as lat% at 1000t. Solid solubility limits of Sb in Pt were determined to be 7.5,10.0 and 6.1at% at 1000˚,800˚ and 600˚ , respectively. The earlier reported Pts Sbf was not found in this study. The liquidus curve between the Ptsb2 and Sb phases was revised.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.35-41
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• 2011

In this study, the interface soaking effect in InAs/GaAs strained-layer superlattice (SLS) on crystalline phase modulation has been analyzed by the x-ray diffraction (XRD) curve. The strain variation induced by As and/or Sb soaking was determined by the separation angle between the substrate peak and the 0th-order superlattice satellite peak in the XRD spectra. Contrated that the As/InAs soaking arises minor GaAs-like interfacial layer, the Sb/GaSb soaking induces InSb-like one. The Fourier-transformed curves of the Pendellosung interference oscillation shows that the optimum soaking times of As/InAs and Sb/GaSb are 2 sec and 12 sec, at which the highest crystallineity has, respectively. An anomalous twin-peak phenomenon that a satellite peak splits into two peaks was observed in the SLS structure co-soaked by As and Sb at InAs${\rightarrow}$GaSb interfaces. We suggest that it may be resulted from coexistence of two kinds crystalline phases of InAsSb and GaAsSb due to intermixing of In${\leftrightarrow}$Ga and Sb${\leftrightarrow}$As.

• Journal of Korean Society of Forest Science
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• v.87 no.2
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• pp.253-259
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• 1998

The stimulated secretion of golden varnish sap by the infection of microorganisms on the bark of Dendropanax morbifera Lev. was observed in the natural habitats. Four candidate strains of such microorganisms(i.e., Sb1, Sb2, Sb3 and Sb4) were isolated from the bark of D. morbifera which was infected in natural. Of them, Sb3 and Sb4 strains showed stimulated secretion of golden vernish sap with the greatest stimulation by Sb4 strains. The yield of golden varnish sap from the bark of D. morbifera was boosted about 3.4~7.7 times by the inoculation of Sb4 strain in compassion with that collected from lacquer tree(Rhus verniciflua Stokes) by the traditional method. The mycelium color of Sb4 strain was grayish white. The optimum growth temperatures and pH were ranged from 30 to $35^{\circ}C$ and from pH 6.5 to 7.0.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.308-308
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• 2011

6.48 ${\AA}$의 격자 상수를 갖는 InSb 물질은 0.17 eV의 낮은 에너지 밴드갭과 78,000 cm2/Vs의 전자 이동도를 갖는 물질로서 고속의 자성 센서소자, 장파장의 광 검출기 그리고 고속 전자소자 등의 분야에서 많은 주목을 받고 있다. 그러나, 전기적 특성이 우수한 InSb 물질을 소자로 구현하는데 있어서 큰 어려움이 있다. InSb와 격자 크기가 잘 맞으면서 절연이 우수한 기판의 부재가 가장 큰 문제가 되는 부분이다. 즉, 격자 부정합을 최소화하며 동시에 절연기판을 사용함으로써 소자의 특성을 잘 살려야 하는 것이다. 이러한 이유로 인하여 InSb 기반의 소자가 널리 사용되지 못하고 있는 것이다. 현재 범용으로 사용하고 있는 기판은 격자 부정합이 14%인 GaAs, 11%의 InP 그리고 18%의 Si 등이 있다. 이번 발표에서는 GaAs 기판 위에 격자 부정합을 최소화하여 InSb 박막을 최적화 시켜 성장하는 방법에 대해서 소개하고자 한다. InSb 박막 성장하는데 있어 논문으로 보고된 여러 가지 방법들이 있다. 기판과의 격자 부정합을 줄이기 위하여 저온-고온 (L-T)의 의한 메타몰픽(metamorphic) buffer 층을 성장 후 InSb 박막을 성장하는 방법[1] 그리고 단계별 buffer를 성장하는 방법[2] 등을 통해서 많은 진보가 있었다. 하지만, 우리는 GaAs 기판 위에 AlSb 박막을 성장 하면서 동시에 In과 Al의 양을 서서히 변화시키는 grading 기술을 사용하였다. 즉, 물질 각각의 격자상수를 고려하여 GaAs (기판)-AlSb-InAlSb-InSb로 변화를 주어 격자 부정합이 최소가 되도록 하여 만들어진 buffer 위에 InSb 층이 만들어 지도록 하여 GaAs 기판 위에 InSb 박막을 성장 할 수 있었다. grading 기술을 이용하여 만들어진 buffer 위에 성장된 0.3 um의 InSb 박막 층은 상온에서 전자 이동도가 약 38,000 cm2/Vs에 이르는 것을 확인하였다. InSb 박막의 두께가 약 1 um 되어야 30,000 cm2/Vs 이상의 전자 이동도를 얻을 수 있다고 많은 논문을 통해서 보고 되고 있으나 우리는 단지 0.3 um의 InSb 박막두께에서 이와 같은 전기적인 특성을 확인하였기에 이상과 같이 보고 하고자 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.30-34
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• 2010

$CoSb_3$-based skutterudite compounds are promising candidates as thermoelectric (TE) materials used in intermediate temperature region. In this study, sintering of $CoSb_3$ powder and joining of $CoSb_3$ to copper-molybdenum electrode have been simultaneously performed by spark plasma sintering technique. The Ti foil was used for preventing the diffusion of copper into $CoSb_3$ and the Cu : Mo = 3 : 7 Vol. ratio composition was selected by the consideration of thermal expansion coefficients. The insertion of Ti interlayer between Cu-Mo and $CoSb_3$ was effective to join $CoSb_3$ to Cu-Mo by forming an intermediate layer of $TiSb_2$ at the Ti-$CoSb_3$ boundary. However, the formation of TiSb and TiCoSb intermediate layers deteriorated the joining properties by the generation of cracks in the interface of intermediate layer/$CoSb_3$ and intermediate/intermediate layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.191-198
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• 2018

SnSb alloy powders with excess Sn or Sb are fabricated by the high energy ball-milling of pure Sn and Sb powders with different Sn/Sb molar ratios, and then their material properties and lithium electrochemical performances are investigated. It is revealed by X-ray diffraction that SnSb alloys are successfully synthesized, and the powder size is decreased via ball-milling. Charge-discharge test using a coin-cell shows that the best result, in terms of the cyclability and the capacity after 50 cycles, comes from the electrode composed of Sn : Sb = 4 : 6, i.e. the capacity of $580mAh\;g^{-1}$ after 50 cycles. When the electrode is composed of Sn : Sb = 3 : 7, however, the capacity is noticeably decreased by the restrained Sn reaction with Li-ion. The pure SnSb alloy powders (Sn : Sb = 5 : 5) results in the second best performance. In the case of Sn-rich SnSb alloys, the initial capacity is relatively high, but the capacity is quickly fading after 20 cycles.