• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.4
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• pp.151-155
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• 1983

In this paper, it is studied a novel SAW oscillator by applicating SAW delay characteristics, which can be variable its frequencies by consiting of two output IDT(Inter-Digital Transducer) without external filtering and resonating circuits. The results of experiments showed the temperature characteristics of AT-cut quartz which has been used as frequency-determing substrate of SAW oscillator was good. Though the variable frequencies range was narrow but the experiments showed the possibility to broaden its frequencies range by design of SAW device, and also confromed the stability of fundamental wave oscillating in high frequency range.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.5
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• pp.1030-1037
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• 2009

SAW Sensor is greatly developed today and Reader Platform which uses SAW Sensor for temperature or pressure is required to use TDS method for low power and high speed processing. For to use this Platform, high speed timer is required to measure a short interval between reference signal and reflectior's signal. This paper proposes that platform receive SAW Sensor's signals and transform digital signal through comparator. Next the transformed signal is measured by Timer Platform and the measured interval is displayed with time. This paper proposes method of measurment of time with nano sec unit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.40-45
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• 1994

$112^{\circ}$ rot. x-cut $LiTaO_{3}$ wafer was used as the substrate of SAW gas sensor. Dual delay line SAW device with IDTs which consist of the reference delay line and the sensing delay line was fabricated using photolithigraphy. Each IDTs had 10 finger pairs and finger spacing is 10 microns. One delay line channel is the reference, while the second is the sensing channel with Pb-phthalocyanine film in the propagation path. Pb-phthalocyanine film which is p-type organic semiconductor was evaporated in $10^{-5}$ torr vacuum using shadow mask selectively. Dual delay line oscillator was constructed by using the rf amplifier and AGC. Frequency of the IDTs had the range of $87{\sim}$89 MHz oscillation frequency. Oscillation frequency shifts were investigated as a function of the temperature and the concentration of $NO_{2}$ gas.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.165-170
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• 2001

AIC$_3$:$^{t}$ BuNH$_2$단일 전구체를 이용하여 MOCVD방법에 의해 상압하에서 1$\mu\textrm{m}$의 두께로 증착하였다. 증착된 AIN 박막을 XRD, SEM, RBS 그리고 AES로 분석했으며 IDT전극을 형성하기 위해 1500＋ 의 두께로 증착했다. 중심주파수 1.5GHz를 갖고 입출력 개수가 각각 500개이며 IDT선폭이 l$\mu\textrm{m}$인 전송형의 SAW filter를 제작하고자 하였다.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.78-82
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• 1988

Good quality LiNbO3 single crystals which can be applied to SAW devices, were grown by Czochralski method. It was observed that the gas-bubbles were concentrated in ring shape at the outer part of grown crystals, and this anomaly was illustrated by modeling the mechanism of gas-bubble entrapment according to the melt flow pattern in the crucible. And this mechanism was also encertained by observation of solid-liquid interface shape of grown crystals. The optimal condition for good quality crystals was known that the solid-liquid interface shape was slightly concave.

• Proceedings of the Acoustical Society of Korea Conference
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• 1985.10a
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• pp.72-74
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• 1985

In this work we describe a new type of SAW FM discriminator which is structurely single layer planar type and uses the elastic nonlineatity compared with acoustoelectric SAW FM discriminator. This device shows successful FM discrimination of among as well as digital signals.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.975-976
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• 2006

The passive type RFID (Radio Frequency Identification) System using Surface Acoustic Wave (SAW) tag at 900 MHz in the range of more than 1 m was fabricated. To improve interrogation range of the system propose a method to increase isolation between transmitter and receiver. This method using a direct conversion architecture achieves a leakage rejection of 10 dB increased compared with conventional system. Measured interrogation range is more than 1 m.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.1-7
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• 1997

SAW filter has been used in mobile communication device, bandpass filter and resonator for merits )f miniaturization and high reliability. Materials for substrate mainly used single crystal such as LiNbO$_{3}$, LiTaO$_{3}$, ZnO. In this study, it was attempted that LiNbO$_{3}$ was substituted for piezoelectric ceramics(PZT4, PZT5A and PZT8) which had simple fabrication process because fabrication of crystal is difficult and it's cost is high. SAW filters were fabricated by the photolithography on piezoelectric ceramics substrates in order to compare their characteristics with LiNbO$_{3}$'s. The experimental value of center frequency was compared with theoretical one. The average difference of center frequency was 3.7%. PZT8 showed the best bandwidth properties among them. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than others.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.