• 한국체육학회지인문사회과학편
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• 제55권2호
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• pp.11-22
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• 2016

루만의 체계이론에 입각해서 기존의 반-도핑 커뮤니케이션을 분석한 결과 다음과 같은 결론에 도달하였다. 기존의 반-도핑 커뮤니케이션은 도핑의 원인과 책임을 개인에게 귀속시키는 개인화 전략을 구사하고 있다. 따라서 문제 해결 방법도 적발, 처벌, 교육을 통한 계몽 같이 철저하게 선수나 지도자 같은 개인에게 초점을 맞추고 있다. 이와 같은 전략은 스포츠체계와 그 주변 체계들의 이해관계가 거미줄처럼 복잡하게 얽혀져 생겨나는 도핑현상을 개인의 자유의지에 따른 결정의 결과로 단순화시킬 뿐만 아니라, 스포츠 및 주변체계들의 성찰 기회를 차단함으로써 체계 내부의 구조적 문제를 은폐시키는데 기여하고, 선수나 트레이너 같은 개별 행위자에게 받아들여지기 어려운 무리한 요구를 부과함으로써 도핑방지노력이 실효를 거둘 수 없게 만든다. 도핑 퇴치 노력이 효력을 발휘하기 위해서는 주체 중심 차원을 넘어서 스포츠조직과 사회적 기능체계들의 차원에서 전략을 구상하고 실행해야 한다.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2006년도 전기학술대회논문집
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• pp.259-260
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• 2006

Effects of Rb doping on the aging characteristics have been studied in SrS:Ce thin film electroluminescence (EL) devices. It has been found that a luminance saturation and decrease of an EL efficiency are suppressed by Rb doping. For the SrS:Ce,Rb device, a luminance and an efficiency after 1024 h of aging at 1 kHz drive maintain at about 70% and 80% of the initial values, respectively.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2199-2202
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• 2011

The electronic properties of altretamine(2,4,6-tris [dimethylamino]-1,3,5-triazine) adsorbed on epitaxial graphene (EG) were investigated by core-level photoemission spectroscopy (CLPES) in conjunction with low energy electron diffraction (LEED). We found that altretamine molecule adsorbed onto interface layer (S1) of graphene as we confirm decrement of S1 peak using CLPES and haziness of LEED pattern. Moreover, the measured work function changes verified that increased adsorption of the altretamine on graphene layer showed n-type doping characteristics due to charge transfer from altretamine to graphene through the nitrogens. Two distinct nitrogen bonding feature associated with the N 1s peak was clearly observed in the core-level spectra indicating two different chemical environments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• 한국진공학회지
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• 제15권3호
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• pp.301-307
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• 2006

P-modulation doping된 In(Ga)As/InGaAsP 양자점에서의 decay time 특성을 undoped 양자점 시료와의 비교를 통해 살펴보았다. 10 K 에서의 photoluminescence (PL) 세기는 doping 된 양자점이 doping되지 않은 양자점에 비해 약 10배 정도 약하게 나왔다. 또한 Time resolved PL (TR-PL) 실험을 통해 얻은 양자점 시료의 기저상태 PL peak 에서의 decay time은 doping된 양자점이 doping 되지 않은 양자점에 비해 매우 짧게 나왔다. 이러한 PL 세기와 decay time 특성을 통해서 본 연구에서 측정한 doping 된 양자점의 경우에는 doping에 의해 결함이 증가하게 되고, 그로 인해 운반자의 비발광 경로가 증가하게 되어 doping 된 양자점의 경우에 decay time이 짧게 나타나는 것으로 분석하였다.

• 전자공학회논문지A
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• 제32A권1호
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• pp.146-151
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• 1995

We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.173-179
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• 2005

본 연구에서는 Nickel-Metal Induced Lateral crystallization(Ni-MILC)에 depart에 따른 영향을 관찰함에 있어 Nickel에 Palladium Metal을 인접시켜(Pd assisted Ni-MILC) 그 결정화 속도를 향상시키는 방법을 제안하였다. a-Si에 Phosphorous가 doping 되어 있는 경우 Ni-MILC의 성장은 intrinsic에 비해 2.5배 감소되는 반면, Boron을 doping한 경우 Ni-MILC의 성장은 intrinsic의 경우보다 5배 이상의 성장을 보이게 되는데, well type의 Pd을 인접시킨 경우 Pd에 의해 유도된 tensile stress가 각 doping에 따른 성장 속도를 더욱 증대시키는 것을 확인할 수 있었으며, 이와 같은 현상을 MILC mechanism으로 설명하였다. 이는 Ni-MILC를 이용하여 다결정 실리콘 TFT 제작 시 결정화 속도로 인하여 문제가 되었던 N-type에서의 적용이 가능함과 동시에 contact MILC 등의 방법에도 이용가능성을 의미한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.145-148
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• 2000

In contrast to the $\pi$ -conjugated polymers which typically absorb light only in the visible spectral region, the $\sigma$-conjugated polymers can be used as efficient material absorbing light in the UV region. In this work, the electronic and optical properties of I$_2$-doped $\sigma$ -conjugated poly (methyl-phenylsilylene) (PMPSi) polymer were investigated. DC conductivity up to 1.2$\times$10$^{-4}$ S/cm was obtained by I$_2$-doping. In UV/Vis absorbance spectrum, a new peak was observed near 370 nm, which was explained by polaron model. The photoluminescence (PL) intensity decreased with increasing degree of I$_2$-doping, and the Infrared (IR) spectrum analysis revealed that the dopants are not directly coupled to the polymer, but effect motions of the methyl and phenyl groups.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.194-194
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• 2009

3C-SiC thin films are widely used in extreme environments, radio frequency (RF) environments, and bio-materials for micro/nano electronic mechanical systems (M/NEMS). The mechanical properties of 3C-SiC thin films need to be considered when designing M/NEMS, so Young's Modulus and the hardness need to be accurately measured. Young's Modulus and the hardness are influenced by N-doping. In this paper, we show that the mechanical properties of poly (polycrystalline) 3C-SiC thin films are influenced by the N-doping concentration. Furthermore, we measure the mechanical properties of 3C-SiC thin films for N-doping concentrations of 1%, 3%, and 5%, by using nanoindentation. For films deposited using a 1% N-doping concentration, Young's Modulus and the hardness were measured as 270 GPa and 30 GPa, respectively. When the surface roughness of the thin films was investigated by using atomic force microscopy (AFM), the roughness of the 5% N-doped 3C-SiC thin film was the lowest of all the films, at 15 nm.

• Archives of Pharmacal Research
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• 제19권4호
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• pp.251-257
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• 1996

The detection of many synthetic chemicals used in industry that may pose a genetic hazard in our environment is subject of great concern at present. In this respect, the genetic toxicity of fenpropathrin ((RS)-.alpha.-cyano-3-phenoxybenzyl-2,2,3,3-tetramethyl cyclopropane carboxylate, CAS No.:39514-41-8), a pyrethroid insecticide, was evaluated in bacterial gene mutation system, chromosome aberration in mammalian cell system and in vivo micronucleus assay with rodents. In bacterial gene mutation assay, no mutagenicity of fenpropathrin (62-$5000\mug/plate$) was observed in Salmonella typhimurium TA 98, 100, 1535 and 1537 both in the absence and in the presence of S-9 metabolic activaton system. In mammalian cell system using chinese hamster lung fibroblast, no clastogenicity of fenpropathrin was also observed both in the absence and in the presence of metabolic activation system in the concentration range of $7-28\mug/ml$. And also, in vivo micronucleus assay using mouse bone marrow cells, fenpropathrin also revealed no mutagenic potential in the dose range of 27-105 mg/kg body weight of fenpropathrin (i.p.). Consequently, no mutagenic potential of fenpropathrin was observed in vitro bacterial, mammalian mutagenicity systems and in vivo micronucleus assay in the dose ranges used in this experiment.