• 제목/요약/키워드: S-doping

검색결과 692건 처리시간 0.023초

Modification of the electrical parameters of CNT-doped deformed-helix ferro-electric liquid crystals

  • Sood, Nitin;Khosla, Samriti;Singh, Darshan;Bawa, S.S.
    • Journal of Information Display
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    • 제13권4호
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    • pp.145-149
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    • 2012
  • Liquid crystals are useful for a wide range of applications due to their exceptional properties. Doping of liquid crystals with carbon nanotubes (CNTs), even at very low concentrations, produces a detectable effect on the liquid crystal (LC) properties that can be very attractive for various functions. In this study, an attempt was made to investigate the effect of CNTs on the electrical properties of a short-pitch and high-spontaneous-polarization ferro-electric LC mixture, FLC-6304, at different temperatures. The inclusion of the CNTs significantly reduced the polarization at temperatures well within the $SmC^*$ phase, but the effect was gradually reversed as the transition temperature was approached. The insertion of the CNTs also reduced the response time and the rotational viscosity of the FLC mixture, which is highly desirable in the LCD industry.

Ba 변성 PMN-PT계 강유전체의 전계유기변위와 분극특성 (Field-induced Strain and Polarization Switching Mechanisms in Ba-modified PMN-PT Ceramics)

  • 장명철
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.12-20
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    • 2000
  • Dielectric property of Ba-modified 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 ceramics having compositions near the morphotropic phase boundary was investigated. For the specimens having Ba contents between 0 and 20 at%, the average transition temperature was decreased linearly with increasing Ba contents and the degree of hysteresis was also decreased with increasing Ba contents. The maximum dielectric constants (K), electric field induced polarization(P) and electrically-induced strain(S) were found to exihibit a maximum value at∼3 at% of Ba. The increase of S and the decrease of hysteresis by minor additions of Ba impurities indicated the development of new higher perfomance actuator materials. The composition of Ba-PMN-PT (10/65/35) may be appropriate for capacitor materials because of low hysteresis and high polarization.

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NMOSFET의 반전층 양자 효과에 관한 연구 (Analysis of Invesion Layer Quantization Effects in NMOSFETs)

  • 박지선;신형순
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권9호
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    • pp.397-407
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    • 2002
  • A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

폴리아닐린 필름의 전기적 특성에 미치는 용매 및 도핑물질의 효과 (The Effect of Solvent and Doping Matter on the Electric Properties of Polyaniline Films)

  • 김재욱
    • E2M - 전기 전자와 첨단 소재
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    • 제10권7호
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    • pp.713-718
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    • 1997
  • Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

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레이저 광 노출에 따른 Ag/칼코게나이드 박막의 광학적인 특성 (Optical Properties of Ag/Chalcogenides Thin Films Exposed to Laser)

  • 김종기;박정일;정흥배;이현용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.561-565
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    • 1999
  • We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

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Influence of sputtering parameter on the properties of silver-doped zinc oxide sputtered films

  • S. H. Jeong;Lee, S. B.;J.H. Boo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2003년도 추계학술발표회초록집
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    • pp.58-58
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    • 2003
  • Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

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$n^+ -p$ 접합에서 위치함수인 유전율을 고려한 경우 접합깊이가 전하밀도에 미치는 영향 (The Effect of Junction Depth on the Charge Density in $n^+ -p$ junction with Consideration of Position dependent Dielectric Constant)

  • 김충원;한백형
    • 대한전자공학회논문지
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    • 제24권2호
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    • pp.260-264
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    • 1987
  • Gaussian $n^{+}$-p집합에 대해 위치함수인 유전율을 고려한 Poisson's equation의 일반적인 형태를 수치적으로 풀어 접합깊이가 전하밀도에 미치는 영향을 살펴 보았다. 또한 유전율의 변화에 기인한 전하 쌍극자의 해석적인 모델을 제시하였다.

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RPLC/DAD를 이용한 Polycyclic Aromatic Hydrocarbon류의 분석에 관한 연구(I) (A Study on the Analysis of Polycyclic Aromatic Hydrocarbons by RPLC/DAD (I))

  • 이원;홍지은;박송자;표희수
    • 분석과학
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    • 제10권5호
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    • pp.315-324
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    • 1997
  • Benzo(a)pyrene을 비롯한 16종의 polycyclic aromatic hydrocarbon(PAHs)과 4종의 nitro-PAHs를 reversed-phase liquid chromatography/diode array detection (RPLC/DAD)를 이용하여 기울기용리법으로 분리하고, PAH류의 머무름거동에 영향을 미치는 인자들, 즉 탄소수, F인자, L/B ratio, 물에 대한 용해도 및 방해수소원자쌍의 수와 시료의 머무름과의 상관관계를 고찰하였다. 대부분의 PAH류는 탄소원자수와 F값이 커질수록 logk'이 증가하는 사실을 확인하였다. 그리고 몇 가지 이성체들과 nitro-PAH류들은 용해도가 크고, L/B값이 작으며, 방해수소원자쌍의 수가 많을수록 먼저 용리됨을 확인하였다. 각 PAH류의 검출한계는 100~500ng/mL 범위로 나타났으며, 실제 물시료에 대한 검출한계(method detection limit, MDL)는 0.1~0.5ng/mL 범위였다.

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Synthesis of new Pb-based layered cuprates in (Pb,S)(Sr,La)CuOz compounds

  • Kim, Jin;Lee, Ho Keun
    • 한국초전도ㆍ저온공학회논문지
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    • 제20권3호
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    • pp.1-4
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    • 2018
  • The effect of sulfate substitution on the formation of (Pb,S)-1201 type phase was investigated. Polycrystalline samples with nominal compositions of $(Pb_{0.5}B_{0.5-x}S_x)(Sr_{2-y}La_y)CuO_z$, (x = 0 - 0.5, y = 0.7 - 1.0) and $(Pb_{0.5}S_{0.5})(Sr_{2-y}La_y)CuO_z$ (y = 0.5 - 1.0) were prepared by using a solid-state reaction method. The samples were characterized by powder X-ray diffraction (XRD) and resistivity measurements. XRD data revealed that almost-single (Pb,S)-1201 phase samples could be obtained for x = 0.5 and y = 0.9-1.0, judging from the similar results of the XRD patterns between the (Pb,S)-1201 and (Pb,B)-1201 phases. Each of the samples has a crystal structure with tetragonal symmetry. The sample with x = 0.5 and y = 0.9 is found to show an onset of resistivity dropping at over 23 K and zero resistivity at 12 K.

UV 조사에 의한 doped ZnS 나노입자의 annealing 효과 (Optical annealing of doped ZnS nanoparticles through UV irradiation)

  • 이준우;조경아;김현석;김진형;박병준;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.24-27
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    • 2004
  • ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

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