• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1066-1069
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• 2004

This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.

• 한국체육학회지인문사회과학편
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• v.54 no.5
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• pp.581-592
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• 2015

This research was fairness in sport and power is how they form and change through historical discussion on the sport's doping and ran afoul of fairness Explored in match-fixing in relationship with power, the product of the problems of human desires. First, doping and exploration of power. The history of doping in sports, history as long as it existed before. Medication is ruler of the players can't or don't conform with authority between the pair formed a relationship, where, in accordance with the victory of a temptation for wealth and fame and vested interests and desire, is personal, Society and country ranging and widely is committed. In particular, power of expression is reflected well reflected in the sport in the Cold War era and, in those days was wrong thinking and practices are still truly understands the connection between doping and anti-doping. Second, match-fixing and exploration of power. Also in the history of sport as doping, match-fixing, always existed. Sport and fairness of match-fixing in relation to artificial sources, and well decide the outcome of which ended with sport, not an issue connected to gambling and other crimes, And that's another sport and bring about a vicious circle of even turn into a row. The reason for this match fixing in power part of the formation of capital and profits for the exact cause has developed that further threatens the fair sport. Thus, in fairness, and relations of power in sport doping and match-fixing is historically very meaningful and, further research and discussion is needed. Buried the materialistic values of sport doping and match-fixing, nothing is being tolerated and other researchers' power as the elements of the pie grow only by sport only No one can guarantee that only satisfied if we hold a bright future of sport.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.58-62
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• 1985

Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

• Proceedings of the Korea Society of Environmental Toocicology Conference
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• 1996.12a
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• pp.65-65
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• 1996

• Proceedings of the Korea Society of Environmental Toocicology Conference
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• 1996.12a
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• pp.66-66
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• 1996

• Proceedings of the Korea Society of Environmental Toocicology Conference
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• 1996.12a
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• pp.67-67
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• 1996

• Proceedings of the Korea Society of Environmental Toocicology Conference
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• 1996.12a
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• pp.68-68
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• 1996

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.647-647
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the structures, energetics and charge transport characteristics of nitrogen-doped graphene and graphene nanoribbons (GNRs) with additional doping of phosphorus or boron atoms. Considering graphitic, pyridinic, and porphrin-like N doping sites and increasing N-doping concentration, we analyze the structures of N-P and N-B doped graphene and particularly focus on how they affect the charge transport along the lateral direction. For the GNRs, we also consider the differences between defects formed at the edge and bulk regions. Implications of our findings in the context of electronic and energy device applications will be also discussed.