• 한국초전도학회:학술대회논문집
• /
• 2009.07a
• /
• pp.10-10
• /
• 2009

• Proceeding of EDISON Challenge
• /
• 2016.03a
• /
• pp.280-284
• /
• 2016

본 연구에서는 Density functional theory(DFT) 계산을 이용하여, $MoS_2$의 Mo와 S를 다른 원자로 치환 했을 때 $2H-MoS_2$ monolayer의 basal plane에서 HER활성을 향상시켰다. 특히 Ge와 Rh를 치환한 경우, ${\Delta}G_H$가 각각 0.03eV, 0,07eV로 최적에 가까운 HER활성이 나타났다. 다른 원자의 치환이 Fermi level 근처의 DOS(density of states)를 높여, ${\Delta}G_H$을 0에 가깝게 낮출 수 있음을 확인하였다. 또한 치환되는 원자의 농도, 그리고 strain을 변화시켜 농도와 strain의 증가에 따른 ${\Delta}G_H$ 감소를 발견했다. 이로써 각치환되는 원자마다, 치환 농도와 strain을 함께 변화시켜 ${\Delta}G_H$을 낮출 수 있었다. ${\Delta}G_H$가 0에 가까운(${\pm}{\pm}0.2eV$ 이내) 원자종류, 치환 농도, strain의 여러 조합을 찾았다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2008.11a
• /
• pp.9-10
• /
• 2008

Triple layers structure of $SiO_2$/ZnS:Mn/ZnS was synthesized by using ion substitution and chemical precipitation method. Each layer thickness was controlled by adjusting the concentration of manganese (II) acetate ($Mn(CH_3COO)_2$) and tetraethyl orthosilicate (TEOS). The structure and morphology of prepared phosphors were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microscopic analyzer (EPMA). Photoluminescence (PL) properties of ZnS with different layer thickness and amount of Mn activator were analyzed by PL spectrometer. PL emission intensity and PL stability were analyzed for evaluating effects of Mn activator.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.75-76
• /
• 2007

ZnS:Cu,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$-doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cu,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.112-113
• /
• 2007

ZnS:Cn,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$ -doping concentration has been investigated on the luminescence characteristics of ZnS:Cn,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cn,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Electronic Materials Letters
• /
• v.14 no.6
• /
• pp.689-699
• /
• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.06a
• /
• pp.521-523
• /
• 2007

이 연구는 Sentaurus Process를 이용하여 실리콘(Si) 웨이퍼에 각각의 불순물들의 도핑 농도를 모의실험 하여 공정 방법과 순서, 온도, 깊이에 따른 도핑 농도의 변화를 나타내었다. 입력한 값에 대한 수치를 한눈에 알아 볼 수 있으며 공정이나 깊이, 도핑 농도에 따라 불순물의 집중도와 공정 방법에 따른 소자 특성의 변화를 한눈에 알아 볼 수 있어서 Sentaurus Process를 이용한 연구를 통해 우수한 소자를 개발하는데 도움이 되리라 본다. 이 연구에서는 공정 파라미터 값의 변화에 따른 도핑 분포를 Sentaurus Process 시뮬레이션을 통하여 관찰할 것이다.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.5
• /
• pp.48-53
• /
• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

• Journal of Information Display
• /
• v.6 no.1
• /
• pp.33-36
• /
• 2005

To obtain various colors from the blue emitting poly(fluorene)s, two different approaches are introduced. One is copolymerization with low band gap comonomers and the other is molecular doping with various dyes. As fast and efficient exciton migration and trapping and/or energy transfer between the chromorphoric segments or doped dyes in conjugated polymers can shift the emission to longer wavelengths, these phenomena can be utilized to obtain various colors from the intrinsically blue light emitting poly(fluorene)s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.5
• /
• pp.476-480
• /
• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.