• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.404-411
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• 2017

이 논문에서는 2차원 화합물 반도체인 Indium Selenide monolayer의 효과적인 도펀트 원소를 탐색해보았다. 총 4가지 종류의 원소를 도핑시켜 계산을 했다. In 자리에 Mg과 Sn을 도핑시켜 각각 p-type과 n-type으로 만들고 Se 자리에 As과 Br을 도핑시켜 각각 p-type과 n-type으로 만들었다. 변화한 성질을 알아보기 위해 전자 구조를 분석하고 band structure와 DOS를 살펴보았다. P-type 같은 경우, Mg doped InSe는 shallow defect level이 생겨 좋은 반도체로 쓰일 수 있지만 As을 도핑한 InSe는 deep defect states가 생겼다. VBM에서 약 0.67 eV만큼 떨어져있는데 이 수치는 실험값과 비슷한 값이다. N-type 경우에는 Sn doped InSe는 deep defect states가 생겼고, CBM 아래로 약 0.08eV만큼 defect가 생긴 것이 실험값과 비슷하다. Br doped InSe는 Sn doped InSe보다 안정적인 n형 반도체가 될 수 있다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.785-786
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• 2012

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.171-174
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• 2002

When boron ions are doped into the poly-Si films, the hydrogen ions doped with boron ions compensate the defect sites and suppress to produce damage density. These samples can be easily activated by hydrogen doping at high acceleration voltage($V_{acc}$).

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.107-112
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• 2007

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.447-448
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• 2008

In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The film thickness was 0.5um and diffraction efficiency was obtained from (P:P) polarized He-Ne (632.8nm)laser beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1353-1364
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• 1996

Recently semiconductor doped glasses have attracted attention as nonlinear optical materials because of their large third order nonlinear optical properties. The transparent and homogeneous CdS-doped SiO2 glass thin films were obtained by the dip=coating process of the sol-gel method. Thin films were consisted of glasses containing CdS microcrystallites which were formed by dissolved Cd2+ and S2- ions in a SiO2 matrix solutions. A subsequent thermal treatment of this samples led the formation of colloidal agglomerates and finally of microcrystallites. The size of CdS microcrystallites was about 4 to 15 nm after thermal treatments at various heating conditions. From the optical absorption spectra of the CdS-doped SiO2 glass films it was found that the absorption edge was blue-shifted compared with that of the bulk CdS crystal(~2, 4 eV) and that the amount of energy shift was inversely proportional to the crystal size. And the band gap energy increased with the decrease in crystallite size indicating that the quantum size effects occured.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.39-42
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• 2006

A $Eu^{2+}$ doped $BaAl_2S_4$ phosphor was synthesized from BaS, EuS, Al and S powder by vacuum heat treatment. The synthesized powder at $850^{\circ}C$ was composed of only $BaAl_2S_4$ phase. The photoluminescence of $Eu^{2+}$ doped $BaAl_2S_4$ phosphor showed the blue emission centered at 470nm and CIE color coordinate at x=0.12, y=0.11.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.493-498
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• 1998

ZnS doped borosilicate glass for nonlinear optical application was prepared by melting and precipitation process. The optical band gap of the precipitated ZnS particles ranged from 3.83 to 3.96 eV compared with the bulk ZnS energy gap of 3.53 eV. This result was interpreted in terms of a quantum confinement effect due to small crystal size. ZnS partilcle size estimated by effective mass approximation ranged from about 39 to 83 $\AA$ It increased wtih the increase of heat tratment time and temperature.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.50-60
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• 1997

Undoped, cobalt-doped and erbium-doped $ZnAl_2S_4, ;ZnAl_2Se_4, ;CdAl_2S_4, ;and;CdAl_2Se_4$ single crystals were grown by the chemical transport reaction method. The crystal structures, the lattice constants, the optical energy gaps, and the photoluminescence properties of these single crystals were investigated. Also, the optical transition mechanisms by the impurities of cobalt and erbium were identified from these results.