• Title/Summary/Keyword: S/V Ratio

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Roundabout Signal Metering Operation Methods by Considering Approach Lane's Degree of Saturation (접근로별 포화도를 고려한 Roundabout Signal Metering 운영방법에 관한 연구)

  • Ahn, Woo-Young;Lee, So-Young
    • International Journal of Highway Engineering
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    • v.15 no.5
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    • pp.217-226
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    • 2013
  • PURPOSES : Under the capacity conditions with balanced approach flows, roundabouts give less delay than existing signalized intersections; however, flows over 450 vehicles/hour/lane with unbalanced approach flow conditions, roundabouts efficiency drops due to the short time difference between the critical gap and the follow-up headway. The purpose of this study is developing a roundabout Signal Metering operation method by considering approach lanes degree of saturation. METHODS : A four-way-approach with one-lane roundabout is selected to compare the Signal Metering performance for the case of 16 different unbalanced flow conditions. Based on these traffic conditions, the performance is evaluated for 64 different cases of Signal Metering combinations by using SIDRA software. A degree of saturation(V/C ratio) sum for two adjoined approaches is used for the performance index of choosing Metered Approach and Controlling Approach. RESULTS : When the V/C ratio sum is 0.29~0.81 and Metered Approach flow is less than Controlling Approach flow, the average delay saving per vehicle is about 7 seconds; however, after this rage the delay saving decreases gradually until the V/C ratio sum reaches around 1.0. The range of V/C ratio sum 0.93~1.09 provides average delay saving per vehicle about 3 seconds. In case of V/C ratio sum is grater than 1.0 and the flows of Metered Approach is grater than Controlling Approach, the average delay per vehicle increases 3~11 times respectively. CONCLUSIONS : As expected, the Signal Metering provides substantial improvements in delay saving for the case of V/C ratio sum is 0.3~1.0 under the traffic flow conditions of Metered Approach is less than Controlling Approach.

Candida rugosa Lipase-Catalyzed Production of Optically Pure S-(+)-Ketoprofen (Candida rugosa 리파제를 이용한 광학적으로 순수한 S-(+)-Ketoprofen의 생산)

  • 김민곤;최순자;최원아;김철호;정봉현
    • KSBB Journal
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    • v.14 no.2
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    • pp.225-229
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    • 1999
  • Enzymatic resolution reactions were investigated using Candida rugosa lipase for the production of potically pure S-(+)-Ketoprofen. When the enzymatic hydroysis (and esterification) of recemic ketoprofen esters (and recemic ketoprofen with alcohol) was investigated comparatively, aqueous media was more specific for S-enantiomer than organic media. In the enzymatic hydrolysis of racemic ketoprofen ethyl ester in aqueous media, optimal temperature and pH for enantioselectivity were $37^{\circ}C$ and 4, respectively. The stereoselectivity of the enzyme was enhanced by adding dialcohols such as ethylene glycol and propylene glycol. The enantiomeric ratio obtained in the 40 %(v/v) ethylene glycol was 2-fold higher than that without the additive. By adding $CH_2Cl_2$, $CHCl_3$ and $CCl_4$ (5%,v/v), the enantioselectivity was reversed. A dramatic increase in the stereoselectivity was achieved using lipase purified by anion exchange chromatography. The type A lipase(the first eluted lipase fraction) showed an enantiomeric ratio of >100, whereas the type B lipase(the second eluted lipase fraction) exhibited enantimomer ratio of 9.0 in the hydrolysis of racemic ketoprofen ethyl ester.

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Double Rail-to-Rail NTV SAR ADC (두 배의 Rail-to-Rail 입력 범위를 갖는 NTV SAR ADC)

  • Jo, Yong-Jun;Seong, Kiho;Seo, In-Shik;Baek, Kwang-Hyun
    • Journal of IKEEE
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    • v.22 no.4
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    • pp.1218-1221
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    • 2018
  • This paper presents a low-power 0.6-V 10-bit 200-kS/s double rail-to-rail successive approximation register (SAR) analog-to-digital converter (ADC). The proposed scheme allows input signal with 4 times power which is compared with conventional one by applying proposed rail-to-rail scheme, and that improves signal-to-noise ratio(SNR) of NTV SAR ADCs. The prototype was designed using 65-nm CMOS technology. At a 0.6-V supply and $2.4-V_{pp}$ (differential) and 200-kS/s, the ADC achieves an SNDR of 59.87 dB and consumes 364.5-nW. The ADC core occupies an active area of only $84{\times}100{\mu}m^2$.

A Study of Heat Transfer in a Horizontal Ice Storage Tube - Inward Freezing Process with Volume Expansion of Ice - (수평 원통형 빙축열조에서의 열전달에 관한 연구 - 얼음의 부피 팽창을 고려하는 내향 응고 실험 -)

  • Lee, J.Y.;Kim, Y.K.;Cho, N.C.;Kim, Y.J.;Yim, C.S.
    • Solar Energy
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    • v.15 no.1
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    • pp.3-11
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    • 1995
  • Heat transfer phenomena during inward freezing process of the water in a horizontal cylinder were experimentally studied. The cooling temperature of a wall more significantly affects the timewise average temperature than the initial superheating temperature of the water. In addition, it was absolved that the timewise average temperature was influenced by the initial volume ratio of the water($V_l/V_{tot}$) at the same temperature conditons. One the other hand, the freezing speed of the upper part in the water-ice interface was quickly progressed due to natural convection. Furthermore, experimental observation showed that the frozen mass fraction($M_s/M_{tot}$) was influenced by the initial volume ratio of the water($V_l/V_{tot}$). It was noted that the frozen mass fraction for each $V_l/V_{tot}$ represented by $Ste^*$ and Fo.

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Electrical characteristics of a ZnO nanowire-based Field Effect Transistor on a flexible plastic substrate (유연한 플라스틱 기판 위에서의 ZnO 나노선 FET소자의 전기적 특성)

  • Kang, Jeong-Min;Keem, Ki-Hyun;Youn, Chang-Jun;Yeom, Dong-Hyuk;Jeongm, Dong-Young;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.149-150
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    • 2006
  • A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

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Associations between Anemia and Glomerular Filtration Rate and Albuminuria in Korean Adults by Metabolic Syndrome Status: Analysis of KNHNES V-3 Data (대한민국 성인의 대사증후군 유무에 따른 빈혈과 사구체 여과율 및 알부민뇨의 연관성: 국민건강영양조사 V-3 분석)

  • Hyun YOON
    • Korean Journal of Clinical Laboratory Science
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    • v.56 no.2
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    • pp.125-134
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    • 2024
  • The present study was conducted to explore relationships between anemia and estimated glomerular filtration rate (eGFR) and urine microalbumin/creatinine ratio (uACR) in Korean adults with or without metabolic syndrome (MetS). The data of 4,943 adults aged ≥20 years who participated in KNHNES V-3 (2012) were analyzed. In the non-MetS group, the odds ratio (OR) for anemia of those with a decreased eGFR {eGFR<60 mL/min/1.73 m2, 3.85 (95% confidence interval [CI], 2.03~7.30)} was significant as was the OR of those with decreased eGFR plus elevated uACR (eGFR<60 mL/min/1.73 m2 and uACR≥30 mg/g, 5.81 [95% CI, 2.60~13.02]). In the MetS group, ORs for anemia for those with an elevated uACR (2.18 [95% CI, 1.11~4.27]), a decreased eGFR (3.74 [95% CI, 1.11~12.55]), or a decreased eGFR plus an elevated uACR (16.79 [95% CI, 5.93~47.57]) were significant. In conclusion, in non-MetS, anemia was associated with a low eGFR, whereas in MetS, anemia was associated with a low eGFR and an elevated uACR. In addition, the OR for anemia was greatly increased when eGFR was diminished and uACR was elevated regardless of MetS and MetS status.

Study on Growth Optimization of InAs/GaSb Strained-Layer Superlattice Structures by High-Resolution XRD Analysis (고분해능 XRD 분석에 의한 InAs/GaSb 응력초격자 구조의 성장 최적화 연구)

  • Kim, J.O.;Shin, H.W.;Choe, J.W.;Lee, S.J.;Kim, C.S.;Noh, S.K.
    • Journal of the Korean Vacuum Society
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    • v.18 no.4
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    • pp.245-253
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    • 2009
  • For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

OCR evaluation of cohesionless soil in centrifuge model using shear wave velocity

  • Cho, Hyung Ik;Sun, Chang Guk;Kim, Jae Hyun;Kim, Dong Soo
    • Geomechanics and Engineering
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    • v.15 no.4
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    • pp.987-995
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    • 2018
  • In this study, a relationship between small-strain shear modulus ($G_{max}$) and overconsolidation ratio (OCR) based on shear wave velocity ($V_S$) measurement was established to identify the stress history of centrifuge model ground. A centrifuge test was conducted in various centrifugal acceleration levels including loading and unloading sequences to cause various stress histories on centrifuge model ground. The $V_S$ and vertical effective stress were measured at each level of acceleration. Then, a sensitivity analysis was conducted using testing data to ensure the suitability of OCR function for the tested cohesionless soils and found that OCR can be estimated based on $V_S$ measurements irrespective of normally-consolidated or overconsolidated loading conditions. Finally, the developed $G_{max}$-OCR relationship was applied to centrifuge models constructed and tested under various induced stress-history conditions. Through a series of tests, it was concluded that the induced stress history on centrifuge model by compaction, g-level variation, and past overburden load can be analysed quantitatively, and it is convinced that the OCR evaluation technique will contribute to better interpret the centrifuge test results.

Preparation of sputter-deposited CuOx thin film with p-type conductivity and application as thin film transistor

  • So Jeong Park;Eui-Jung Yun
    • Journal of the Korean Physical Society
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    • v.81
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    • pp.867-875
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    • 2022
  • This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuOx) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu2O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu2O, was measured for samples prepared with an OP of 20%. In addition, only Cu+ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu2+ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu2O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuOx thin films could be constantly converted from n-type CuO to p-type Cu2O by decreasing the oxygen partial pressure. Thin film transistors with Cu2O deposited at 20% OP revealed p-type characteristics such as onset voltage (VON) of -3 V, saturated hole mobility of 8 cm2/Vs at VGS = -28 V, subthreshold swing of 0.86 V/decade at VGS-VON = -0.5 V, and on/off ratio of 1.14 × 103.