• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.68-68
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• 1997

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.163-163
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• 2003

TiN barrier막 위에 metal organic chemical deposition(MOCVD)법으로 RuO$_2$ 를 증착시 TiN막 표면을 세정처리하지 않을 경우 RuO$_2$의 핵생성이 어렵고, 그로 인해 RuO$_2$ 연속막이 형성되기 힘들다. 그러므로 RuO$_2$의 핵생성을 향상시키기 위해 TiN막에 대한 전처리 세정이 필수적이다. TiN막의 전처리 세정방법으로 ECR plasma 세정법을 사용하였으며, $O_2$ plasma와 H$_2$ plasma 그리고 Ai plasma를 이용해 각각의 exposure time을 변화시키며 전처리 세정을 실시하였다. H$_2$ plasma와Ar plasma의 exposure time이 증가됨에 따라 RuO$_2$의 핵생성이 향상되었다. 본 연구에서는 scanning electron microscopy(SEM), Auger electron emission spectrometry(AES), Atomic Force Microscope(AFM), X-ray diffraction (XRD) 등의 분석을 통해 TiN막 표면에 대한 ECR plasma 전처리 세정 이 RuO$_2$의 핵생성과 연속막 성장에 미치는 효과에 대해 조사하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.865-869
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• 2002

The structural and electrical properties of PZT (lead zirconate titante) thin films grown on Pt (platinum) and Ru/Ru $O_2$(ruthenium/ruthenium oxide) electrodes were investigated. Thin films of PZT were deposited on a variety of electrodes using the rf-magnetron sputtering process. PZT films exhibited polycrystalline structure with strong PZT (100) plane and weak (211) plane for an optimizied Pt electrode and (100), (101), (111), (200), (210), (211) planes for Ru/Ru $O_2$. Switching polarization versus fatigue characteristic of Pt/Ti electrodes showed 20% degradation up to 1 $\times$ 10$_{9}$ cycles. No significant fatigue was observed in the films on Ru/Ru $O_2$ electrodes up to Ix109 test cycles. The results show that the new Ru/Ru $O_2$ bottom electrodes are expected to reduce the degradation of ferroelectric fatigue.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.11-16
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• 2009

Composite electrodes for redox supercapacitor were prepared potentiodynamically by the deposition of $RuO_2$ and the co-deposition of Ru-Co mixed oxide on the surface of single-walled carbon nanotube. Electrode of Ru-Co mixed oxide, in which Ru(13.13 wt%) and Co(2.89 wt%) were deposited on the carbon nanotube, exhibited a similar specific capacitance(${\sim}620\;F\;g^{-1}$) with $RuO_2$ electrode at a low potential scan rate($10\;mV\;s^{-1}$), but showed a superior one ($570\;F\;g^{-1}$) at a high scan rate($500\;mV\;s^{-1}$) than that of $RuO_2$($475\;F\;g^{-1}$). Such increase in the specific capacitance at high scan rate by the co-deposition of Ru and Co species was due to the structural support of Co species to provide the electronic conduction through Ru species.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.1
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• pp.9-16
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• 2005

We studied the electrochromic properties of hydrated amorphous ruthenium oxide ($RuO_2{\cdot}xH_2O$) thin films using in-situ Raman spectroscopy during electrochemical charging/discharging cycles. We have found that the principal effect of hydrogen insertion into $RuO_2{\cdot}xH_2O$ is reduction of $Ru^{4+}\;to\;Ru^{3+}$, and not formation of new bonds involving hydrogen. We compared the changes in the Raman spectrum of a gasochromic $Pd/RuO_2{\cdot}xH_2O$ film as it is exposed to hydrogen gas with that of electrochemical hydrogen insertion. We tested the changes in the optical transmission of the $Pd/RuO_2{\cdot}xH_2O$ film when exposed to hydrogen gas.

• Journal of the Microelectronics and Packaging Society
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• v.1 no.2
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• pp.125-134
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• 1994

저항범위가 다른 두종류의 Ru계 후막저항계(1Kohm/sq. 100kohm/sq.)를 선택하여 도전상의 상전이 기구를 반응조건을 변화시켜 연구하였다. 저저항체의 경우 도전상으로는 RuO2였으며 700-100$0^{\circ}C$에서 1시간 반응한 경우 반응온도에 따른 구성상의 변화는 없었다 반응온도 90$0^{\circ}C$에서 반응시간이 경과함에 따라 도전상은 RuO2가 Glass의 구성성분인 Pb와 반응하여 Rb2(Ru1.69 Pb0.31)O6.5로 변하고 시간이 36시간 경과한 후에는 도전상이 Pb4Al2Si2O10인 결정으로 둘러 쌓이는 반응인 peritectic reaction이 일어났다. 고전항체의 경 우 도전상으로는 Pb2(Ru1.69 Pb0.31)O6.5로 변하고 시간이 36시간 경과한 후에는 더전상이 Pb4Al2Si2O10인 결정으로 둘러쌓이는 반응인 peritectic reaction 이 일어났다. 고저항체의 경 우 도전상으로는 Pb2(Ru1.69 Pb0.31)O6.5인 pyrochrole 상이였다. 100$0^{\circ}C$에서 1시간 반응시킬 경 우 도전상이 RuO2로 변하였다. 반응온도를 90$0^{\circ}C$로 하고 반응시간을 변화시키면 도전상인 Pb2(Ru1.69 Pb0.31)O6.5가 (Ru1.69Pb0.31)O4x로 변하면서 공존하였다.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.271-275
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• 2019

Anodic $TiO_2$ nanotubes were simultaneously grown and doped with $RuO_2$ by single-step anodization in a negatively-charged $RuO_4{^-}$ precursor. Subsequently, a high positive voltage was imposed on the nanotubes in an $F^-$-based electrolyte (a process referred to as potential shock), which led to the formation of a through-hole $RuO_2$-doped $TiO_2$ nanotube membrane without significant loss of the $RuO_2$ catalyst. XPS results confirmed that the doped Ru metal was converted into $RuO_2$ as the potential shock voltage increased. Further increases in the potential shock voltage led to the formation of $RuO_x/Ru$ in the $TiO_2$ nanotubes. All of our results clearly showed that a through-hole catalyst-doped $TiO_2$ nanotube membrane can be produced by a sequence consisting of single-step anodization and the potential shock process.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.55-60
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• 2024

Two-dimensional (2D) RuO₂ nanosheets with nanometer thickness were synthesized using a chemical exfoliation method. The synthesized 2D-RuO₂ was hybridized with Ag-nanowire (NW), which is attracting attention as a next-generation transparent electrode material. After coating Ag-NW on the substrate, 2D-RuO₂ was subsequently coated on the Ag-NW. Although there was a decrease in optical transmittance, the hybridization of 2D-RuO₂ confirmed the effect of reducing sheet resistance. Furthermore, the flexibility of the fabricated transparent electrodes was also studied. It was confirmed by the change in sheet resistance after bending. The additional coating of 2D-RuO₂ improved the flexibility of the transparent electrodes.