• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.269-269
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• 2012

수산화인회석(Hydroxyapatite)는 뼈와 이빨의 무기물 주성분으로서, 칼슘과 인산염으로 구성된다. 우리는 수산화인회석의 합성에 용융열 합성법(molten salt method), 수열 합성법(hydrothermal method), 용매열 합성법(solvothermal method)을 사용하였으며, pH 조절과 각기 다른 용매를 사용하여 다양한 형태의 수산화인회석을 합성하였다. TEM과 SEM을 이용하여 크기와 모양이 제어된 수산화인회석임을 확인할 수 있었다. 합성된 수산화인회석을 이용하여, 전이금속 Ruthenium cation을 Hydroxyapatite 표면에 ion-exchange 반응을 통하여 도입하였으며, ICP를 통하여 Ru 함양을 정량하였다. 합성된 Ruthenium Hydroxyapatite (Ru-HAP)를 이용하여 dimethylamine borane를 통한 수소 발생을 확인하였다.

• Korean Chemical Engineering Research
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• v.47 no.5
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• pp.608-614
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• 2009

In this work, ruthenium substituted SBA-15's(Ru-SBA15's) of various Si/Ru ratios were prepared using a non-ionic triblock copolymer surfactant, $EO_{20}PO_{70}EO_{20}$, as template. We investigated the nitrogen or oxygen adsorption/desorption behaviors of the Ru-SBA-15's for their future applications as catalysts or selective adsorbents, etc. The pore size of the Ru-SBA-15's was determined by both the Barrett-Joyner-Halenda(BJH)($D_{BJH}$) and the Broekhoff-de Boer analysis with a Frenkel-Halsey-Hill isotherm(BdB-FFF) method($D_{BdB-FHH}$). The $D_{BJH}$ and $D_{BdB-FHH}$ of the Ru-SBA-15 having 50/1 ratio of Si/Ru were 3.9 nm and 4.7 nm, respectively. The transmission electron microscope(TEM) image of the Ru-SBA 15 of the Si/Ru mole ratio of 50 showed that the pore size is 4.7 nm, which is consistent with the $N_2$ adsorption results with the BdB-FHH method. The surface area of pores form oxygen adsorption/desorption isotherm was higher than that from the nitrogen adsorption/desorption isotherm by the Brunauer-Emmett-Teller(BET) method, which were respectively $612.7m^2/g$, and $573.3m^2/g$. X-ray diffraction(XRD) patterns and TEM analyses showed that the mesoporous materials possess well-ordered hexagonal arrays.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.21.1-21.1
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.57-58
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• 2006

In MIM (metal insulator metal) capacitor, Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed m order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as functions of chemical A concentration, abrasive particle and pressure. Chemical A was used as oxidant and etchant. The thickness of passivation layer on the treated Ru surface increased with the increase of chemical A concentration. The etch rate and removal rate of Ru were increased by the addition of chemical A. The removal rate was highest m slurry of pH 9 with the addition of 0.1 M chemical A and 2 wt% alumina at 4 psi. The maximum removal rate is about 80 nm/min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.557-557
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• 2007

최근 Ruthenium (Ru)은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 저유전체와의 높은 안정성 등과 같은 특성으로 인해 캐패시터의 하부전극으로 각광받고 있다. 이렇게 형성된 Ru 하부전극은 각 캐패시터간의 분리와 평탄화를 위해 CMP 공정이 도입되게 되었다. 이러한 CMP 공정후에는 화학적 또는 물리적 상호작용에 의해 웨이퍼 표면에 오염물이 발생할 수 있다. CMP 공정중에 공급되는 슬러리에는 부식액, pH 적정제, 연마입자등이 첨가되는데 이때 사용된 연마입자는 CMP 공정후 입자오염을 유발할 수 있다. 그러므로, CMP 공정후에는 이러한 오염으로 인해 cleaning 공정이 반드시 필요하게 되었다. 하지만, Post Ru CMP cleaning에 대한 연구는 아직 미비한 상태이다. 그리하여 본 연구에서는 post Ru CMP cleaning에 대한 연구와 cleaning solution 그리고 첨가제에 따른 영향을 살펴보았다.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.24-27
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• 2009

Electrochemistry of 1.0 mM tris(2,2'-bipyridyl)ruthenium(II) ($Ru(bpy)_3{^{2+}}$) in 300 mM $H_2SO_4$ solution with and without sodium dodecyl sulfate (SDS) is studied. In the presence of SDS, $E_{pa}$ of $Ru(bpy)_3{^{2+}}$ shifts to positive direction compared to the SDS free case. The intersection of two lines on ${\Delta}E_p$ vs. -log[SDS] plot is measured as a critical micelle concentration (CMC), which is 3.67 mM SDS.

• Bulletin of the Korean Chemical Society
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• v.24 no.10
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• pp.1490-1494
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• 2003

Noncovalently linked electron donor-acceptor dyad consisting of zinc tetratolylporphyrin and pyridine appended ruthenium trisbipyridine comlex was prepared, via axial coordination of pyridine moiety in ruthenium trisbipyridine complex on zinc tetratolylporphyrin. For the purpose of comparison, axial coordination of pyridine-appended 2,2'-bipyridine on zinc tetratolylporphyrin was also investigated. The Kvalues were detemined based on absorption of fluorescence studies. The fluorescence of zinc teratolylporphrin was efficiently quenched upon axial coordination of pyridine moiety, prbably due to the photoinduced electron transfer from zinc tetrtolylporphyrin to ruthenium trisbipyridine, supported by free enegy estimation.