• 대기
• /
• 제26권1호
• /
• pp.111-126
• /
• 2016

In the numerical weather model, surface properties can be defined by various parameters such as terrain height, landuse, surface albedo, soil moisture, surface emissivity, roughness length and so on. And these parameters need to be improved in the Seoul metropolitan area that established high-rise and complex buildings by urbanization at a recent time. The surface roughness length map is developed from digital elevation model (DEM) and it is implemented to the high-resolution numerical weather (WISE-WRF) model. Simulated results from WISE-WRF model are analyzed the relationship between meteorological variables to changes in the surface roughness length. Friction speed and wind speed are improved with various surface roughness in urban, these variables affected to temperature and relative humidity and hence the surface roughness length will affect to the precipitation and Planetary Boundary Layer (PBL) height. When surface variables by the WISE-WRF model are validated with Automatic Weather System (AWS) observations, NEW experiment is able to simulate more accurate than ORG experiment in temperature and wind speed. Especially, wind speed is overestimated over $2.5m\;s^{-1}$ on some AWS stations in Seoul and surrounding area but it improved with positive correlation and Root Mean Square Error (RMSE) below $2.5m\;s^{-1}$ in whole area. There are close relationship between surface roughness length and wind speed, and the change of surface variables lead to the change of location and duration of precipitation. As a result, the accuracy of WISE-WRF model is improved with the new surface roughness length retrieved from DEM, and its surface roughness length is important role in the high-resolution WISE-WRF model. By the way, the result in this study need various validation from retrieved the surface roughness length to numerical weather model simulations with observation data.

• 한국세라믹학회지
• /
• 제48권4호
• /
• pp.312-315
• /
• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.232-235
• /
• 2002

An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

• 접착 및 계면
• /
• 제13권1호
• /
• pp.24-30
• /
• 2012

폴리아릴레이트(polyarylate, PAR) 섬유의 산 처리와 자외선 조사 처리에 의한 섬유표면의 미세구조 변화를 SEM과 AFM을 통하여 살펴보고 RMS roughness로 분석하였으며, 접촉각 측정을 하였다. 또한, PAR 섬유의 표면개질이 폴리에틸렌 나프탈레이트(polyethylene naphthalate, PEN) 수지와의 계면접착력에 어떠한 영향을 미치는지를 섬유 풀-아웃 시험(Fiber Pull-out)을 통해 분석하였다. 산처리 농도와 자외선 조사 처리 시간이 증가함에 따라 PAR 섬유의 표면에 에칭이나 크랙이 발생하면서 표면의 거칠기가 증가하는 양상을 보였으며, 물에 대한 접촉각은 감소하는 결과를 보였다. PEN 수지와의 계면접착력을 분석한 결과, 산 처리 농도의 증가와 자외선 조사처리 시간이 경과에 따라 증가하였고 특히, 산 처리 농도 pH 3, 자외선 조사 처리시간이 24 h일 때 최대 계면접착력을 보였다. 이는 섬유표면조도의 증가에 따른 섬유 표면적의 증가로, 계면에서 상호작용할 수 있는 면적이 증가하기 때문이라고 볼 수 있다.

• 한국산림과학회지
• /
• 제112권3호
• /
• pp.374-381
• /
• 2023

산지하천에서 발생하는 돌발홍수는 특정 지점의 점(Point) 유속보다는 전체 구간의 평균 유속에 따라 이동속도가 결정되며, 구간 평균유속은 하천경사, 하상재료, 수리적 거칠기에 많은 영향을 받는다. 이 연구에서는 하천경사 및 거칠기 높이를 이용하여 산지하천의 구간 평균유속 추정방법을 개발하였다. 염료추적자법(Dye Tracing)을 이용하여 특정 구간의 평균유속을 측정하고, LiDAR 영상으로부터 하천 지형 및 형상을 추출하였다. 거칠기 높이를 산정하기 위해 표면 거칠기 변수(R_a, R_max, R_z )와 하상재료의 크기(D₅₀, D₈₄)를 이용하였다. 현장 계측자료로부터 무차원 접근법을 이용하여 구간 평균유속과 유량과의 관계식 v = 0.5499Q^0.6165 을 도출하였으며, R² =0.77의 설명력을 나타냈다. 이 연구에 이용된 5개의 거칠기 높이 중 평균 거칠기 높이(R_a)의 RMSE가 0.45로서 다른 거칠기 높이의 범위(0.47-1.04)보다 낮게 나타나 평균 거칠기 높이(R_a)가 구간 평균유속 산정을 위한 거칠기 높이 인자로 가장 적합하다고 판단되었다.

• Transactions on Electrical and Electronic Materials
• /
• 제7권1호
• /
• pp.36-41
• /
• 2006

In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.94.2-94.2
• /
• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.10-10
• /
• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• 한국진공학회지
• /
• 제13권1호
• /
• pp.29-33
• /
• 2004

본 논문에서는 RF 마그네트론 스퍼터링법으로 비정질 실리콘을 증착하여 진공분위기에서 엑시머 레이저 어닐링을 이용하여 플라스틱 기판위에 극저온 다결정 실리콘 박막(＜$150^{\circ}C$)을 형성하였다. 비정질 실리콘 박막은 $120^{\circ}C$에서 Ar/He 혼합가스로 증착하였으며, Rutherford Backscattering Spectrometry로 측정한 박막내 아르곤 함량은 2% 이하였다. 에너지 밀도 320mJ/$\textrm{cm}^2$일 때 다결정 실리콘의 결정화도는 62%, Root-Mean-Square roughness는 267$\AA$를 나타내었다. 엑시머 레이저 결정화 후 결정립의 크기는 50nm에서 100nm 정도를 나타내었다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 춘계학술대회 논문집
• /
• pp.1493-1496
• /
• 2005

In this paper, we describe a simple, precise and low cost method of fabricating PDMS stamp for UV embossing. It is important to improve the replication quality of stamp because the accuracy of fabricated structure is related to that of the stamp in UV embossing. The PDMS stamp has been fabricated by the replica molding technology with ultrasonic vibration to eliminate micro-air bubbles during the fabrication process of PDMS stamp. Also, this fabrication to use ultrasonic vibration promotes PDMS solution to fill into micro channel and edge parts. We report the fabrication of an optical core using UV embossing with fabricated PDMS stamp. This fabricated core is $7\;\mu{m}\;at\;depth,\;6\;\mu{m}\;at\;width.\;This\;measured\;value\;has\;the\;difference\;below\;1\;\mu{m}$compared to the original stamp. The surface roughness of core is about 14 nm root mean square. This is satisfactory value to use low-loss optical waveguide. Our successful demonstration of precise replica technology presents an alternative approach for the stamp of UV embossing.