• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.5
• /
• pp.511-515
• /
• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• Korean Journal of Metals and Materials
• /
• v.46 no.4
• /
• pp.217-222
• /
• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-face n-type GaN were investigated using KOH solutions. It was observed that hexagonal pyramids were formed on the etched surface regardless of etching conditions. However, the size of the hexagonal pyramids was changed as the etching time and temperature increased, respectively. Initially, as the etching time and concentration of KOH solution increased, the hexagonal pyramid was observed to be dissociated into smaller pyramids. However, as the etching time increased further, the size of the hexagonal pyramids increased again, indicating that the etching of N-face n-type GaN by KOH solutions proceeded through the evolution of hexagonal pyramids, such as formation, dissociation and enlargement of pyramids. Furthermore, it was also observed that there is a correlation between the photoluminescence intensity of the etched surface and the value of root-mean-square roughness. The intensity of PL increased as the roughness value increased due to the enhancement of the extraction efficiency of the generated photons.

• Restorative Dentistry and Endodontics
• /
• v.33 no.1
• /
• pp.1-8
• /
• 2008

The purpose of this study was to evaluate the effect of a new resin monomer, filler size and polishing technique on the surface roughness of composite resin restorations using confocal laser scanning microscopy. By adding new methoxylated Bis-GMA (Bis-M-GMA, 2,2-bis[4-(2-methoxy-3-methacryloyloxy propoxy) phenyl] propane) having low viscosity, the content of TEGDMA might be decreased. Three experimental composite resins were made: EX1 (Bis-M-GMA/TEGDMA = 95/5 wt%, 40 nm nanofillers); EX2 (Bis-M-GMA/TEGDMA = 95/5 wt%, 20 nm nanofillers); EX3 (Bis-GMA/TEGDMA = 70/30 wt%, 40 nm nanofillers). Filtek Z250 was used as a reference. Nine specimens (6 mm in diameter and 2 mm in thickness) for each experimental composite resin and Filtek Z250 were fabricated in a teflon mold and assigned to three groups. In Mylar strip group, specimens were left undisturbed. In Sof-lex group, specimens were ground with #1000 SiC paper and polished with Sof-lex discs. In DiaPolisher group, specimens were ground with #1000 SiC paper and polished with DiaPolisher polishing points. The Ra (Average roughness), Rq (Root mean square roughness), Rv (Valley roughness), Rp (Peak roughness), Rc (2D roughness) and Sc (3D roughness) values were determined using confocal laser scanning microscopy. The data were statistically analyzed by Two-way ANOVA and Tukey multiple comparisons test (p = 0.05). The type of composite resin and polishing technique significantly affected the surface roughness of the composite resin restorations (p < 0.001). EX3 showed the smoothest surface compared to the other composite resins (p < 0.05). Mylar strip resulted in smoother surface than other polishing techniques (p < 0.05). Bis-M-GMA. a new resin monomer having low viscosity, might reduce the amount of diluent, but showed adverse effect on the surface roughness of composite resin restorations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.1
• /
• pp.91-97
• /
• 2013

The input parameters of scattering models for computing the backscattering coefficients of earth terrains are mainly soil moisture and surface roughness. The backscattering coefficients of soil surfaces are more sensitive to surface roughness than soil moisture. In this study, we propose a precise measurement method for roughness parameters and analyze measurement errors. We measured surface roughness using a pin-board profiler(1 m, 0.5 cm interval) and a laser profiler(1 m, 0.25 cm interval). The measurement differences between two profilers in an average sense are 0.097 cm for root-mean-square (RMS) height and 1.828 cm for correlation length. The analysis of the correlation functions and relative errors shows that the laser measurements are more stable than the pin-board measurements. The differences of the calculated backscattering coefficients using a surface scattering model between pin-board and laser profiler measurements are less than 1 dB.

• The Journal of Korean Academy of Prosthodontics
• /
• v.57 no.4
• /
• pp.335-341
• /
• 2019

Purpose: Chemically strong-acids (HF and $HCl/H_2SO_4$) dual etching implant surfaces have higher strengths of osseointegration than machined implant surfaces. However, the dual acid treatment deteriorates the physical properties of the titanium by weakening the fatigue resistance of the implant and causing microcracks. The removal torque comparison between the dual-acid etched (hydrochloric acid, sulfuric acid, HS) and single-acid etched implants (hydrochloric acid, H) could reveal the efficiency of implant surface acid treatment. Materials and methods: Nine $3.75{\times}4mm$ dual-acid etched SLA implants and nine single-acid etched SLA implants were inserted into New Zealand rabbit tibias. After 10 days, removal torque, roughness, and wetting angle were measured. Results: Mean removal torque values were as follows: Mean removal torque were 9.94 Ncm for HS group and 9.96 Ncm for H group (P=.995). Mean surface roughness value were $0.93{\mu}m$ for HS group and $0.84{\mu}m$ for H group (P=.170). Root mean square roughness (RSq) values were $1.21{\mu}m$ for HS group and $1.08{\mu}m$ for H group (P=.294), and mean wetting angle values were $99^{\circ}$ for HS group and $98^{\circ}$ for H group (P=.829). Statistical analysis showed no significant difference between the removal torques, roughness, or wetting angles of the two groups. Conclusion: In this experiment, we found no significant difference in removal torque, roughness, or wetting angle between dual-acid etched and single-acid etched implants.

• Journal of Magnetics
• /
• v.7 no.3
• /
• pp.72-79
• /
• 2002

Local M-H loops have been measured on the free layer of a tunneling magnetoresistance (TMR) junction using the magneto-optical Kerr effect (MOKE) system, with an optical beam size of about 2 $\mu$m diameter. Tunnel junctions were deposited using the DC magnetron sputtering method in a chamber with a base pressure of 3$\times$10$^{-9}$ Torr. The relatively irregular variations of coercive force H$_c$(∼17.5 Oe) and unidirectional anisotropy field H$_{ua}$(∼7.5 Oe) in the as-deposited sample are revealed. After $200{^{\circ}C}$ annealing, He decreases to 15 Oe but H$_{ua}$ increases to 20 Oe with smooth local variations. Two-dimensional plots of H$_c$ and H$_{ua}$ show the symmetric saddle shapes with their axes aligned with the pinned layer, irrespective of the annealing field angle. This is thought to be caused by geometric effects during deposition, together with a minor annealing effect. In addition, the variation of root mean square (RMS) surface roughness reveals it to be symmetric with respect to the center of the pinned-layer axis, with the roughness of 2.5 $\AA$ near the edge and 5.8 $\AA$ at the junction center. Comparison of surface roughness with the variation of H$_{ua}$ suggests that the H$_{ua}$ variation of the free layer is well described by dipole interactions related to surface roughness. As a whole, the reversal magnetization is not uniform over the entire junction area and the macroscopic properties are governed by the average sum of local distributions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.5
• /
• pp.349-352
• /
• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.279-282
• /
• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Korean Journal of Remote Sensing
• /
• v.27 no.3
• /
• pp.225-234
• /
• 2011

This study proposes an inversion algorithm to extract the surface parameters, such as surface roughness and soil moisture contents, using multi-frequency SAR data. The study areas include the tidal flats of Jebu Island and the reclaimed lands of Hwaong district on the western coasts of the Korean peninsula. SAR data of three frequencies were accordingly calibrated to provide precise backscattering coefficients through absolute radiometric calibration. The root mean square (RMS) height and the correlation length, which can describe the surface roughness, were extracted from the backscattering coefficients using the inversion of the Integral Equation Method (IEM). The IEM model was appropriately modified to accommodate the environmental conditions of tidal flats. Volumetric soil moisture was also simultaneously extracted from the dielectric constant using the empirical model, which define the relations between volumetric soil moistures and dielectric constants. The results obtained from the proposed algorithm were verified with the in-situ measurements, and we confirmed that multi-frequency SAR observations combined with the surface scattering model for tidal flats can be used to quantitatively retrieve the geophysical surface parameters in tidal flats.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.700-704
• /
• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.