• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.511-515
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• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• 대한금속재료학회지
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• 제46권4호
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• pp.217-222
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-face n-type GaN were investigated using KOH solutions. It was observed that hexagonal pyramids were formed on the etched surface regardless of etching conditions. However, the size of the hexagonal pyramids was changed as the etching time and temperature increased, respectively. Initially, as the etching time and concentration of KOH solution increased, the hexagonal pyramid was observed to be dissociated into smaller pyramids. However, as the etching time increased further, the size of the hexagonal pyramids increased again, indicating that the etching of N-face n-type GaN by KOH solutions proceeded through the evolution of hexagonal pyramids, such as formation, dissociation and enlargement of pyramids. Furthermore, it was also observed that there is a correlation between the photoluminescence intensity of the etched surface and the value of root-mean-square roughness. The intensity of PL increased as the roughness value increased due to the enhancement of the extraction efficiency of the generated photons.

• Restorative Dentistry and Endodontics
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• 제33권1호
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• pp.1-8
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• 2008

본 연구는 공초점 현미경을 이용하여 새로운 단량체와 filler의 크기, 연마방법이 실험용 복합레진의 표면조도에 미치는 영향을 연구하였다. 단점이 많은 희석재인 TEGDMA의 사용을 줄이기 위해, Bis-GMA의 유도체로서 중합수축이 적고 점도가 낮은 새로운 단량체인 methoxlyated Bis-GMA (Bis-M-CMA)를 첨가하고 다른 크기의 filer를 갖는 2종의 실험용 복합레진과 TEGDMA를 함유한 1종의 실험용 복합레진을 제작하였다. EX1; 실험용 복합레진 1 (Bis-M-GMA/TEGDMA = 95/5 wt%, 40 nm 나노필러 함유), EX2; 실험용 복합레진 2 (Bis-M-GMA/TEGDMA = 95/5wt%, 20 nm 나노필러 함유), EX3; 실험용 복합레진 3 (Bis-GMA/TEGDMA = 70/30 wt%, 40 nm 나노필러 함유). 테프론 몰드를 이용하여 지름 6 mm 두께 2 mm의 시편을 각 실험용 복합레진과 Filtek Z250으로 9개씩 만들고 3군으로 분류하였다. Mylar strip 군은 연마를 하지 않았고, Sof-lex군은 #1000 SiC paper로 연마한 뒤 501-lex disc로 연마하였다. Diapolisher 군은 #1000 SiC paper로 연마한 뒤 DiaPolisher polishing point로 연마하였다. 공초점 현미경을 이용하여 각 시편당 7군데에서 Rq (Root mean square roughness), Rv (Valley roughness), Rp (Peak roughness), Rc (2D Roughness), Sc (3D Roughness) 값을 측정하였고, Two-way ANOVA와 Tukey multiple comparisons test로 유의수준 0.05로 통계처리 하였다. 복합레진의 종류 (p < 0.001), 연마 방법 (p < 0.001)은 각각 모두 표면조도 값에 영향을 미치며, 복합레진의 종류와 연마 방법 간에는 교호 작용이 관찰되었다 (p < 0.001). 복합레진의 종류에 따른 표면조도는 EX2가 가장 거친 표면을 보였고, EX3이 가장 평활한 면을 형성하였으며 (p < 0.05). 연마 방법에서는 연마하지 않은 Mylar strip 군이 가장 평활한 면을 형성하였다 (p < 0.05). 본 연구 결과를 종합하여보면 연마하지 않고 Mylar strip하에서 복합레진이 중합된 경우 가장 낮은 표면조도와 평활한 표면을 보였으며, 새로운 레진 단량체인 Bis-M-GMA를 함유한 복합레진이 수복물의 표면조도 측면에서는 필러 크기에 관계없이 기존의 Bis-GMA/TEGDMA를 기질단량체로 사용하는 복합레진에 비교하여 우수하지 못한 것을 확인하였다.

• 한국전자파학회논문지
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• 제24권1호
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• pp.91-97
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• 2013

지표면의 후방 산란 계수를 계산하는 지표면 산란 모델의 입력 변수로는 크게 수분함유량과 지표면 거칠기가 있고, 산란 계수 계산에 있어 지표면 거칠기의 영향이 수분함유량의 영향보다 크다. 본 연구에서는 지표면 거칠기의 정확한 측정 방법을 제기하고, 측정 오차를 분석한다. 이를 위하여 대표적인 지표면 거칠기 측정 장치인 pin-board profiler(1 m, 0.5 cm 간격)와 laser profiler(1 m, 0.25 cm 간격)를 이용하여 실제 지표면을 측정하였다. 두 측정 장치의 평균 차이는 유효 높이(RMS height)가 0.097 cm, 상관 길이(correlation length)가 1.828 cm이었다. 그리고 상관 함수, 상대오차를 분석한 결과, laser-profiler의 반복 측정에 대한 장치의 안전성이 더 좋았다. 두 측정 장치의 차이가 후방 산란 계수에 미치는 영향을 분석하기 위해 지표면 산란 모델을 이용하여 비교한 결과, 입사각 $20{\sim}60^{\circ}$에서 1 dB 이하의 차이를 보였다.

• 대한치과보철학회지
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• 제57권4호
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• pp.335-341
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• 2019

목적:불산과 염산/ 황산을 두 번 사용하는 임플란트 표면처리 방식은 선반가공한 표면에 비하여 강한 결합력을 보이지만 두 번 산처리하는 방식은 티타늄의 피로도를 야기시켜 미소균열을 야기시킬 수 있으므로, 염산으로 한번 산처리하는 방식이 비슷한 결합력을 가진다면 단순하고 효율적인 산처리 방식이 될 수 있다. 재료 및 방법: 9개의 지름 3.75, 길이 4 mm의 두 번 처리 방식의 임플란트와 같은 크기의 한 번 처리 방식의 임플란트를 토끼의 경골에 심어서, 10일 후에 회전제거력, 거칠기, 젖음각도를 측정하였다. 결과: 두 번 처리 방식과 한 번 처리 방식의 회전제거력은 차이가 없었고 (P = .995). 두 번 처리군의 거칠기는 $0.93{\mu}m$, 한 번 처리는 $0.84{\mu}m$이었다 (P = .170). 평균젖음각은 두 번 처리는 $99^{\circ}$, 한 번 처리는 $98^{\circ}$ 이었다 (P = .829). 각 변수 모두 두 그룹의 차이는 없었다. 결론:산으로 한번 처리하거나 두 번 처리 하거나 두 그룹의 회전제거력, 거칠기, 평균젖음각의 차이는 없었기 때문에 종래의 dual acid treatment보다 한번 처리하여도 유용한 것으로 보여진다.

• Journal of Magnetics
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• 제7권3호
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• pp.72-79
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• 2002

Local M-H loops have been measured on the free layer of a tunneling magnetoresistance (TMR) junction using the magneto-optical Kerr effect (MOKE) system, with an optical beam size of about 2 $\mu$m diameter. Tunnel junctions were deposited using the DC magnetron sputtering method in a chamber with a base pressure of 3$\times$10$^{-9}$ Torr. The relatively irregular variations of coercive force H$_c$(∼17.5 Oe) and unidirectional anisotropy field H$_{ua}$(∼7.5 Oe) in the as-deposited sample are revealed. After $200{^{\circ}C}$ annealing, He decreases to 15 Oe but H$_{ua}$ increases to 20 Oe with smooth local variations. Two-dimensional plots of H$_c$ and H$_{ua}$ show the symmetric saddle shapes with their axes aligned with the pinned layer, irrespective of the annealing field angle. This is thought to be caused by geometric effects during deposition, together with a minor annealing effect. In addition, the variation of root mean square (RMS) surface roughness reveals it to be symmetric with respect to the center of the pinned-layer axis, with the roughness of 2.5 $\AA$ near the edge and 5.8 $\AA$ at the junction center. Comparison of surface roughness with the variation of H$_{ua}$ suggests that the H$_{ua}$ variation of the free layer is well described by dipole interactions related to surface roughness. As a whole, the reversal magnetization is not uniform over the entire junction area and the macroscopic properties are governed by the average sum of local distributions.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.349-352
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• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 대한원격탐사학회지
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• 제27권3호
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• pp.225-234
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• 2011

This study proposes an inversion algorithm to extract the surface parameters, such as surface roughness and soil moisture contents, using multi-frequency SAR data. The study areas include the tidal flats of Jebu Island and the reclaimed lands of Hwaong district on the western coasts of the Korean peninsula. SAR data of three frequencies were accordingly calibrated to provide precise backscattering coefficients through absolute radiometric calibration. The root mean square (RMS) height and the correlation length, which can describe the surface roughness, were extracted from the backscattering coefficients using the inversion of the Integral Equation Method (IEM). The IEM model was appropriately modified to accommodate the environmental conditions of tidal flats. Volumetric soil moisture was also simultaneously extracted from the dielectric constant using the empirical model, which define the relations between volumetric soil moistures and dielectric constants. The results obtained from the proposed algorithm were verified with the in-situ measurements, and we confirmed that multi-frequency SAR observations combined with the surface scattering model for tidal flats can be used to quantitatively retrieve the geophysical surface parameters in tidal flats.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.