• Atmosphere
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• v.26 no.1
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• pp.111-126
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• 2016

In the numerical weather model, surface properties can be defined by various parameters such as terrain height, landuse, surface albedo, soil moisture, surface emissivity, roughness length and so on. And these parameters need to be improved in the Seoul metropolitan area that established high-rise and complex buildings by urbanization at a recent time. The surface roughness length map is developed from digital elevation model (DEM) and it is implemented to the high-resolution numerical weather (WISE-WRF) model. Simulated results from WISE-WRF model are analyzed the relationship between meteorological variables to changes in the surface roughness length. Friction speed and wind speed are improved with various surface roughness in urban, these variables affected to temperature and relative humidity and hence the surface roughness length will affect to the precipitation and Planetary Boundary Layer (PBL) height. When surface variables by the WISE-WRF model are validated with Automatic Weather System (AWS) observations, NEW experiment is able to simulate more accurate than ORG experiment in temperature and wind speed. Especially, wind speed is overestimated over $2.5m\;s^{-1}$ on some AWS stations in Seoul and surrounding area but it improved with positive correlation and Root Mean Square Error (RMSE) below $2.5m\;s^{-1}$ in whole area. There are close relationship between surface roughness length and wind speed, and the change of surface variables lead to the change of location and duration of precipitation. As a result, the accuracy of WISE-WRF model is improved with the new surface roughness length retrieved from DEM, and its surface roughness length is important role in the high-resolution WISE-WRF model. By the way, the result in this study need various validation from retrieved the surface roughness length to numerical weather model simulations with observation data.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.232-235
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• 2002

An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

• Journal of Adhesion and Interface
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• v.13 no.1
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• pp.24-30
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• 2012

Morphological changes of polyarylate (PAR) fiber treated with formic acid and ultraviolet (UV) were observed by using a scanning electron microscope (SEM) and an atomic force microscope (AFM). The results were analysed by using root mean square (RMS) roughness. In addition, the chemical changes of surface was investigated using contact angle and the interfacial adhesive strength between PAR fiber and PEN (Polyethylene naphthalate) matrix was calculated using the Pull-out test results. As the acid treatment concentration and UV irradiation time increased, cracks and pores were produced on the PAR fiber surface. Due to the roughness increased, the contact angle was decreased. For this reason, RMS roughness of PAR fiber was increased and the interfacial adhesive strength between the PAR fiber and PEN matrix was improved. The increase of interfacial adhesive strength was responsible for the increase of surface area which have cracks and pores.

• Journal of Korean Society of Forest Science
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• v.112 no.3
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• pp.374-381
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• 2023

The travel time of flash floods along mountain streams is mainly governed by reach-average velocity, rather than by the point velocity of the locations of interest. Reach-average velocity is influenced by various factors such as stream geometry, streambed materials, and the hydraulic roughness of streams. In this study, the reach-average velocity in mountain streams was measured for storm periods using rhodamine dye tracing. The point cloud data obtained from a LiDAR survey was used to extract the average hydraulic roughness height, such as R_a, R_max, and R_z. The size distribution of the streambed materials (D₅₀, D₈₄) was also considered in the estimation of the roughness height. The field experiments revealed that the reach-average velocities had a significant relationship with flow discharges (v = 0.5499Q^0.6165 ), with an R² value of 0.77. The root mean square error in the roughness height of the R_a-based estimation (0.45) was lower than those of the other estimations (0.47-1.04). Among the parameters for roughness height estimation, the R_a -based roughness height was the most reliable and suitable for developing the reach-average velocity equation for estimating the travel time of flood waves in mountain streams.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.36-41
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• 2006

In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.94.2-94.2
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• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.29-33
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• 2004

In this paper, we investigated the ultra-low temperature(<$150^{\circ}C$) polycrystalline silicon film on plastic substrate application using RF-magnetron sputtering and excimer laser annealing. Amorphous silicon films were deposited using Ar/He mixture gas at $120^{\circ}C$ and in-film argon concentration was less than 2%, which was measured to Rutherford Backscattering Spectrometry. At energy density 320mJ/$\textrm{cm}^2$, RMS roughness was 267$\AA$ and UV crystallinity was 62%. The grain size varies from 50nm to 100nm after excimer laser irradiation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1493-1496
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• 2005

In this paper, we describe a simple, precise and low cost method of fabricating PDMS stamp for UV embossing. It is important to improve the replication quality of stamp because the accuracy of fabricated structure is related to that of the stamp in UV embossing. The PDMS stamp has been fabricated by the replica molding technology with ultrasonic vibration to eliminate micro-air bubbles during the fabrication process of PDMS stamp. Also, this fabrication to use ultrasonic vibration promotes PDMS solution to fill into micro channel and edge parts. We report the fabrication of an optical core using UV embossing with fabricated PDMS stamp. This fabricated core is $7\;\mu{m}\;at\;depth,\;6\;\mu{m}\;at\;width.\;This\;measured\;value\;has\;the\;difference\;below\;1\;\mu{m}$compared to the original stamp. The surface roughness of core is about 14 nm root mean square. This is satisfactory value to use low-loss optical waveguide. Our successful demonstration of precise replica technology presents an alternative approach for the stamp of UV embossing.