• 식물병연구
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• 제7권1호
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• pp.42-48
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• 2001

참외 연작지에서 문제가 되는 뿌리혹선충의 효율적인 방제법을 구명하기 위하여, 땅콩뿌리혹선충이 감염된 성주과채류시험장 온실에서 실험을 실시하였다. 재배적 방제로는 참깨, 파, 옥수수 및 벼를 참외 심기 전에 윤작작물로 재배하였고, 물리적 방제는 건토, 태양열처리 및 객토였으며, 화학적 방제약제로는 forthizate 입제를 사용하였다. 방제효율은 방제 방법간 큰 차이가 있었는데, 벼 윤작, 태양열처리, 객토에서 방제효과가 가장 높아 뿌리혹선충 밀도는 90% 감소하였고 참외 수량은 무처리에 비해 2배 증수되었다. 그러나 이러한 처리구에서 선충밀도가 6월 이후 다시 증가하여 처리효과는 참외 한 작기에만 유효하였다. 다음으로 효과가 높은 것은 옥수수 윤작, 건토, forthizate 처리였다. Forthizate 처리는 초기 수량에서 유의한 증수 효과가 인정되었으나(P=0.05) 후기 수량과 전체 수량에서는 증수 효과가 없었다. 윤작작물로 참깨와 파는 선충 방제 효과가 없었다.

• Journal of Ecology and Environment
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• 제38권2호
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• pp.175-183
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• 2015

Extremely strong winds and heavy rainfall caused canopy gaps in a mixed Abies holophylla broadleaf forest and a Quercus mongolica-dominated forest in Odaesan National Park, Korea in October 2006. The impact of the combination of strong winds and torrential rain on the development of forest gaps and canopy structures were investigated. The mean size of newly created gaps were $205m^2$ in the mixed forest and $86m^2$ in the Quercus forest, and were created by 2.8 and 1.4 gapmaker trees, respectively. Among the 73 trees lost in the mixed forest, 59% succumbed because of direct wind damage while 41% were struck by neighboring trees that fell into them. Most of these trees downed by wind were uprooted (74%), while the trees downed by neighboring tree falls snapped (78%). 21 trees in the Quercus forest died from direct wind damage, and 57% of them were uprooted. Although the relative density of Abies nephrolepis and A. holophylla represented only 0.2% and 6.4%, respectively, of all species in the intact mixed forest, they accounted for 27% and 15%, respectively, of all trees affected by wind on that site. In fact, 85% of the total A. nephrolepis and 91% of the total A. holophylla in the mixed forest fell directly due to strong wind. By contrast, only one Abies species, A. nephrolepis, was found in the Quercusdominated forest, and it accounted for 7.3% of the species composition. These findings suggest that A. nephrolepis and A. holophylla are particularly susceptible to high winds because of their great heights and shallow root systems.

• 한국약용작물학회지
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• 제9권1호
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• pp.76-82
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• 2001

고추냉이 물재배에서 토양의 배지조성이 고추냉이의 생육 및 수량에 미치는 영향을 구명하기 위해 시험한 결과 토양의 입경 조성은 일본에 비하여 마사토, 강모래에서는 2mm 이상의 자갈 함량이 적었고 조사의 분포가 많았다. 토양경도는 마사토와 강모래에서 상층은 $11.3{\sim}12.9$, 하층은 $12.5{\sim}15.1$ 사이에 분포하였으나, 난석에서 상층은 $5.5{\sim}5.8$, 하층은 $6.2{\sim}7.0$ 사이에 분포하여 난석의 경도가 가장 낮았다. 근계 분포는 경도가 낮은 난석에서는 좁고 깊게 분포하였으나, 경도가 높은 마사토, 강모래에서는 넓고 말게 분포하였다. 근경중은 난석에서 입수구 쪽은 766kg/10a, 퇴수구 쪽은 649kg/10a, 마사토에서 입수구 쪽은 338kg/10a, 퇴수구쪽은 334kg/10a, 강모래에서 입수구 쪽은 451kg/10a, 퇴수구 쪽은 332k9/10a로 난석 대비 입수구 쪽은 마사토 44%, 강모래 59%, 퇴수구 쪽은 마사토, 강모래 각각 51% 수준이었다.

• 한국약용작물학회지
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• 제18권2호
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• pp.74-78
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• 2010

This experiment was carried out to select suitable organic matter in To-jik nursery (self soil nursery) for complement To-jik nursery's defects that are deterioration of raw material by poor quality of seed ginseng and reduction of the quantity in seed ginseng production. Organic matter used were Yacto, rice bean, defatted rice bran, soybean cake and their mixture. As follows, bulk density in soil physical property by treating organic composts was the greatest in soybean cake and the next was followed by mix, Yacto, defatted rice bran, and rice bran treatment in order. Soil pore space ratio was totally the opposite; that was rice bran the first and followed by defatted rice bran, Yacto, mix and soybean cake treatment. The incidence rate of damping off by treating organic composts was 1.5% in both soybean cake and mix while the others was 1.0%. Emergence time was the same among treatment on April 16 and Emergence rate was the highest at 73% in Yacto. There was no significant differences among treatment in the growth of aboveground part but it was a little better in defatted rice bran treatment. In Yacto treatment, the growth of underground part, total root number per kan, rate of first grade ginseng seedling, and rate of usable ginseng seedling etc. were entirely higher but there was little differences. Using defatted rice bran was slightly lower in productivity compared to Yacto, but the possibility was high as a alternative for Yacto in a view of managing cost down.

• Restorative Dentistry and Endodontics
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• 제20권1호
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• pp.275-288
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• 1995

The inhibitory effect of cell wall extracts of streptococci, have been investigated to know host-parasite relationship or pathogenesis of abscess formation. Streptococci isolated from the infected root canals were sonicated to get cell wall extracts which have been known as one of the factors of pyogenesis. Lymphocytes separated by density gradient were stimulated with phytohemagglutinin and exposed to cell wall extracts of Streptococcus sanguis, S. mitis, S. uberis, S. mutans (ATCC 10449), and S. faecalis (ATCC 19433). [$^3H$]-thymidine uptake of lymphocytes was analyzed with scintillation counter and lactate dehyrogenase (LD) activity was measured with autochemistry analyzer. S. faeealis had the strongest inhibitory effect. beginning at $100\;{\mu}g/ml$ concentration of sonic extracts. S. sanguis and S. mitis had inhibitory effect at $300\;{\mu}g/ml$, while S. uberis and S. mutans showed no inhibitory, effect on DNA syntheis even at $300\;{\mu}g/ml$. Each streptococci showed different inhibitory effect on the DNA synthesis of lymphocytes, which finding indicated wide spectrum of susceptibility of lymphocytes according to streptococcus spp. There were no significant difference of LD activities between control and each streptococcal extracts. Streptococcal sonic extracts did not affect the morphological findings or number of colonies activated lymphocytes. These finding suggested the inhibitory effect of sonic extract of streptococci to lymphocytes could be detected by DNA synthesis inhibition, not by cellular membrane damage.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• 한국수산과학회지
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• 제19권3호
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• pp.274-280
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• 1986

대, 소조기에 마산만에서 연속관측한 자료를 사용하여 만구 단면의 유속 변동특성을 구명하기 위하여 net velocity와 RMS속도의 등양선 및 순 유출입량을 계산하여 검토하였다. 최강유속은 수도 중앙과 서부의 4m 이하의 표층에서 나타나고, 최대 유입속도 24cm/sec 최대 유출속도는 15 cm/sec이다. 최강유속 시간임에도 불구하고 4m 이심에서는 유속이 약하여 $0{\sim}2cm/sec$에 불과하다. 만구 단면의 가장자리의 상층에 역류가 존재한다. net velocity는 비가 오지 않은 대조기의 경우 유출유속은 만구단면 서부에서 나타나며, 유입유속은 단면 동부에서 나타난다. 비온 직후의 소조기에는 이와 정반대로 흐른다. RMS속도의 최대 세기는 대조기에 $11.3{\sim}15.0cm/sec$, 소조기에 $7{\sim}10.3cm/sec$로서 단면 서부의 표층에 있으며, 매 조석주기마다 거의 동일위치에서 계속 존재한다. 순 통과유량은 건기에 $-39.7m^3/sec$, 우기 $-170m^3/sec$로서 유출이 탁월하다. 항유성분은 건기에는 조석잔차류가 우세하지만, 소조기의 강우시에는 밀도류가 우세한 것으로 추리된다.

• Journal of Plant Biotechnology
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• 제43권1호
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• pp.110-118
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• 2016

We compared germination efficiency for somatic embryos (SE) of Liriodendron tulipifera using semi-solid (SS), temporary immersion bioreactors (TIB), and continuous immersion bioreactors (CIB) to produce vigorous plants. The bioreactors were designed to be immersed in liquid media with plantlets with an adjustable immersion time. TIB and CIB improved germination rates up to 80.86% and 95.21%, respectively, however, CIB produced more hyperhydric plantlets than TIB. The height of plantlets in TIB was significantly higher than for those in CIB. Fresh weights of plantlets grown in CIB of were significantly lower than for those grown in TIB. The lowest chlorophyll concentration was found in in vitro plantlets from CIB. We examined abnormally developed leaves, stems, and apical zones of in vitro plantlets that were produced in CIB. Among the three types, SS showed the highest stomatal density and the shortest stomatal length in in vitro plantlets. After acclimatization, plants from CIB exhibited the lowest values in biomass, such as height, root collar diameter, leaf fresh weight, leaf length, leaf width, petiole length, petiole diameter, and leaf area. Photosynthesis and transpiration rates of ex vitro plants were not significantly different among the three culture types, but stomatal conductance was higher in TIB than in the SS and CIB. Therefore, the results suggest that TIB is the preferable bioreactor to improve in vitro plantlet regeneration of L. tulipifera. TIB-originated plants showed higher growth rate than SS and CIB after transferring to soil.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1187-1194
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• 2003

A BCl$_3$/Ne plasma chemistry was used to etch Ga-based (GaAs, AIGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a Planar Inductively Coupled Plasma (ICP) reactor. The addition of the Ne instead of Ar can minimize electrical and optical damage during dry etching of III-V semiconductors due to its light mass compared to that of Ar All of the materials exhibited a maximum etch rate at BCl$_3$ to Ne ratios of 0.25-0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to relatively high volatilities of their trichloride etch products (boiling point CaCl$_3$ : 201 $^{\circ}C$, AsCl$_3$ : 130 $^{\circ}C$, PCl$_3$: 76 $^{\circ}C$) compared to InCl$_3$ (boiling point : 600 $^{\circ}C$). We obtained low root-mean-square(RMS) roughness of the etched sulfate of both AIGaAs and GaAs, which is quite comparable to the unetched control samples. Excellent etch anisotropy ( > 85$^{\circ}$) of the GaAs and AIGaAs in our PICP BCl$_3$/Ne etching relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask. However, the surfaces of In-based materials are somewhat degraded during the BCl$_3$/Ne etching due to the low volatility of InCl$_{x}$./.