• Composites Research
• /
• 제28권6호
• /
• pp.383-388
• /
• 2015

이온성 고분자 복합물인 IPMC(Ionic Polymer Metal Composite)는 부드러운 고분자 필름의 양면에 백금으로 구성된 전극층이 부착된 형태로 구성되어 있으며, 외부 물리적 자극에 대응하여 전기적 에너지를 발생시키는 특성을 가지고 있다. 본 논문에서는 IPMC의 굽힘에 대응하여 생성되는 전압을 예측할 수 있는 회로 모델을 제안하였다. 모델의 내부는 IPMC의 물리적인 특성을 묘사하는 전기 소자들로 구성되어 있으며, 실제 측정된 출력 전압과 시뮬레이션 출력 전압 사이의 RMS(Root Mean Square) 오차가 최소화 되도록 파라미터들의 값이 선정되었다. 이어서, 회로 모델의 관측기를 극점 배치 기법을 사용하여 설계하였으며 관측기로부터의 출력 전압 시뮬레이션의 결과 실제 전압 신호와의 오차가 줄어듦을 확인하였다. 또한, 상태 관측기 설계 기법이 측정된 출력 전압으로부터 입력 굽힘 각도를 추정하는 역 모델의 설계에도 적용되었으며 설계된 역 모델이 입력 각도를 큰 오차 없이 추정함을 검증하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.10-10
• /
• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• Transactions on Electrical and Electronic Materials
• /
• 제14권6호
• /
• pp.312-316
• /
• 2013

In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

• 한국정밀공학회지
• /
• 제12권4호
• /
• pp.100-110
• /
• 1995

This paper aims at reviewing the possibility of application over normal or abnormal, detection used by AE, and the characteristics of grinding processes. In this study, when WA-vitri-fied ' resinoid bond grinding wheels:36 kinds of grinding wheel and grinding depth were tuned at the surface grinding, the zone of AE signal generation is theoretically modelled and reviewed by grinding processes. The variation of grinding resistance( F$n^{9}$ $F_{t}$) and AE signal is detected in-process by the use of AE measuring system. The tests are carried out in accordance with grain size and grade of grinding wheels, and work-pieces-STD11 and STD61. According to the experiment's results, the following can be expected;as grinding time passes by, the relation of grinding depth and quantity of AE signal, observing on AE signal and grinding burn suggest the characteristics of grinding processes and evalution on the possibility of control of grinding machine, and monitoring abnormal conditions.e, and monitoring abnormal conditions.

• 한국분무공학회지
• /
• 제18권4호
• /
• pp.176-181
• /
• 2013

In this study, injection quantity, rate and spray image of multiple injections which are important design parameters for a piezo type injector have been investigated. Interval of injections and a number of injections in multiple injection strategy has been controlled to verify interaction of each injection. Spray characteristics of multiple injections have been researched through optical process with a high speed camera in a high pressure chamber. In addition, a method of RMS(Root Mean Square) process has been used for comprehending the distribution of injection easily. As a result, in case of piezo type injector, characteristics of injection quantity according to charging voltage and the difference of injection quantity between single and triple injection were confirmed. Also, injection rate for increasing injection duration was confirmed. And spray characteristics of multiple injections were improved; multiple injections were possible in a shorter time interval between each injection. With this study, a possibilities of more accurate multiple injection control would be expected.

• ETRI Journal
• /
• 제35권4호
• /
• pp.638-643
• /
• 2013

This paper presents a 5-bit digital step attenuator (DSA) using a commercial 0.18-${\mu}m$ silicon-on-insulator (SOI) process for the wideband phased array antenna. Both low insertion loss and low root mean square (RMS) phase error and amplitude error are achieved employing two attenuation topologies of the switched path attenuator and the switched T-type attenuator. The attenuation coverage of 31 dB with a least significant bit of 1 dB is achieved at DC to 20 GHz. The RMS phase error and amplitude error are less than $2.5^{\circ}$ and less than 0.5 dB, respectively. The measured insertion loss of the reference state is less than 5.5 dB at 10 GHz. The input return loss and output return loss are each less than 12 dB at DC to 20 GHz. The current consumption is nearly zero with a voltage supply of 1.8 V. The chip size is $0.93mm{\times}0.68mm$, including pads. To the best of the authors' knowledge, this is the first demonstration of a low phase error DC-to-20-GHz SOI DSA.

• Journal of Power Electronics
• /
• 제18권1호
• /
• pp.45-55
• /
• 2018

It is usually difficult for dual-active-bridge (DAB) dc-dc converters to operate efficiently at light loads. This paper presents an in-depth analysis of a DAB with triple-phase-shift (TPS) control under the light load condition to overcome this problem. A kind of operating mode which is suitable for light load operation is analyzed in this paper. First, an analysis of the zero-voltage-switching (ZVS) constraints for the DAB converter has been carried out and a reasonable dead-band setting method has been proposed. Secondly, the basic operating characteristics of the converter are analyzed. Third, under the condition of satisfying the ZVS constraints, both the reactive power and the root mean square (RMS) value of the current are simultaneously minimized and a particle swarm optimization (PSO) algorithm is employed to analyze and solve this optimization problem. Lastly, both simulations and experiments are carried out to verify the effectiveness of the proposed method. The experimental results show that the converter can effectively achieve ZVS and improved efficiency.

• 한국방사선학회논문지
• /
• 제11권7호
• /
• pp.663-669
• /
• 2017

진단목적의 방사선 의료 영상의 활용의 증가에 따라 환자의 피폭 선량 증가와 의료영상의 진단적 가치 저하에 기여하는 산란선의 관리 및 저감을 위한 연구는 필수적이라 할 수 있다. 이에 본 연구에서는 관전압 증가에 따른 산란선의 증감이 영상 화질에 미치는 영향을 분석하였다. 이를 위해 ANSI 흉부 팬텀을 이용하여, 관전압 변화에 따른 산란선 발생 비율을 측정하고, 산란선의 발생에 따른 화질 영향을 RMS(Root Mean Square) 입상성 평가, RSD(Relative Standard Deviation) 및 NPS(Noise Power Spectrum) 분석을 통해 고찰하였다. 관전압 증가에 따른 산란선 발생비율은 73 kV 관전압에서 48.8%, 93 kV 관전압 인가시 80.1%로 점차 증가하는 것으로 확인되었다. 관전압 증가에 따른 산란선 증가의 화질 영향을 분석하기 위한 RMS 분석 결과, 관전압 증가에 따른 RMS 값이 증가하는 것으로 나타나 영상의 입상성이 떨어지는 결과로 도출되었다. 공간주파수 2.5 lp/mm에서의 NPS 값 또한 관전압 73 kV 인가에 비해 93kV 관전압 증가시 20% 정도 영상의 잡음이 증가하는 것으로 나타났다. 본 연구를 통하여 관전압 변화에 따른 산란선 발생이 화질에 미치는 영향을 확인할 수 있었으며, 이러한 연구 결과는 의료영상 품질 개선을 위한 연구의 기초 자료로서 활용 가능할 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.232-235
• /
• 2002

An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

• 한국재료학회지
• /
• 제23권3호
• /
• pp.194-198
• /
• 2013

In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a $1mm{\times}1mm$ vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.