• Journal of Fisheries and Marine Sciences Education
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• v.18 no.2
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• pp.77-84
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• 2006

This research evaluates thermal comfort by comparing the case of maintain cooing temperature of room with the case of raising it at the point of time that human body begins to adapt. An experiment uses constant temperature & humidity chamber 2 places. Pretesting room make up summer season environment, the testing room control by air-conditioner. In condition that maintain temperature of $33^{\circ}C$. The subjects stay in the pretesting room during the 30 minute for the heat storage amount of the normal summertime. The subjects stay in the testing room under each case (case 1: maintaining $24^{\circ}C$, case 2: maintaining $26^{\circ}C$, case 3: up $1^{\circ}C$ after maintaining $24^{\circ}C$ during 30 minute, case 4: up $1^{\circ}C$ after maintaining $26^{\circ}C$ during 40 minute). 1. Result of comparison of case 1 and case 2 appears that thermal sensitive vote examine from slight cool to cool and thermal comfort examine slight comfort by temperature rise at human body adaptation point of time.2. Test of case 3 and case 4 appear similar value at thermal sensitive vote and thermal comfort.3. Through the case 2 and case 4, continuous thermal comfort maintain at $24^{\circ}C$, if raise $26^{\circ}C$, same thermal comfort maintain after a human body adaptation temperature rising effect bring energy saving.

• Journal of Space Technology and Applications
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• v.1 no.3
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• pp.356-363
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• 2021

It was common knowledge in textbooks that images acquired using mid-infrared ray were not suitable for measuring temperature near room temperature. But a recent satellite image using a mid-infrared sensor show the possibility that the result measured using the mid-infrared sensor can also measure the temperature near room temperature. In this paper, the possibility and accuracy of extraction room temperature information from satellite images with mid-infrared sensors are reviewed. The mid-infrared satellite image reviewed in this paper showed the temperature of room temperature well, and regarding the reliability as an absolute value of the measured temperature, the effect of the heat transfer amount due to the direct reflection of sunlight on the surface and the effect of the infrared absorption amount absorbed in the atmosphere can be seen as a relatively small or constant value. However, the problem of uncertainty in the radiation coefficient due to physical properties, which is the limit of the non-contact thermometer, remained a problem to be solved.

• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.6
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• pp.580-585
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• 2022

In this study, the high-temperature dielectric constant of Si₃N₄ ceramics, a representative non-oxide-based radome material, was evaluated and the cause of the dielectric constant change was analyzed in relation to the oxidation behavior. The dielectric constant of Si₃N₄ ceramics was 7.79 at room temperature, and it linearly increased as the temperature increased, showing 8.42 at 1,000 ℃. As results of analyzing the microstructure and phase for the Si₃N₄ ceramics before and after heat-treatment, it was confirmed that oxidation did not occur at all or occurred only on the surface at a very insignificant level below 1,000 ℃. Based on this, it is concluded that the increase in the dielectric constant according to the temperature increase of Si₃N₄ ceramics is irrelevant to the oxidation behavior and is only due to the activation of charge polarization.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.3
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• pp.367-370
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• 2014

The accelerated thermal aging of a CSPE were carried out for 0, 80.82, 161.63 days at $100^{\circ}C$, which are equal to 0, 40 and 80 years, respectively. The volume electrical resistivities of the non-accelerated thermally aged CSPE and the accelerated thermally aged CSPE for 40y and 80y were $9.620{\times}10^{12}{\sim}1.246{\times}10^{13}{\Omega}{\cdot}cm$, $5.066{\times}10^{12}{\sim}7.576{\times}10^{12}{\Omega}{\cdot}cm$ and $7.195{\times}10^{12}{\sim}9.208{\times}10^{12}{\Omega}{\cdot}cm$ at room temperature, respectively. The dielectric constant of the non-accelerated thermally aged CSPE and the accelerated thermally aged CSPE for 40y and 80y were 3.355~4.030, 2.996~3.963 and 3.020~4.776 at room temperature, respectively. After seawater and freshwater flooding, the volume electrical resistivity of the CSPE trend slightly upward according to drying day at room temperature. After seawater flooding, the dielectric constant of the accelerated thermally aged CSPE were not measured. After seawater flooding, bright open pores of the accelerated thermally aged CSPE were partly transferred to dark close pores due to salinity. After freshwater flooding, dark close pores of the accelerated thermally aged CSPE were partly transferred to bright open pores because salinity of them is decreased. An insulation property of a cable in NPPs was decreased because of the seawater flooding, and an insulation property of them was recovered through the freshwater flooding. As a result, it is considered that an insulation property of a contaminated cable through Tsunami can be recovered if it is cleaned quickly.

• Tribology and Lubricants
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• v.14 no.2
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• pp.1-9
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• 1998

The electrorheological (ER) behavior of suspensions in silicone oil of phosphated cellulose particles (average particle size 17.77 ${\mu}{\textrm}{m}$) was investigated at room temperature with electric fields up to 2.5 KV/mm. In this paper, for development of anhydrous ER suspensions using at wide temperature range, we would like to know fundamental understandings on the ER activity. As a first step, the anhydrous ER suspensions dispersed the phosphated cellulose particles were measured, and not only the electrical characteristics such as dielectric constant, current density and electrical conductivity but also the rheological properties on strength of electric field and quantity of dispersed phase were studied. From the experimental results, the anhydrous ER suspensions dispersed phosphated cellulose particles showed a stable current density and very high performance of ER effect $(\tau/\tau_0=1030)$ on the 2.5 KV/mm and the dynamic yield stress $(\tau_y)$ was in exponential proportion to the strength of electric fields.

• Journal of Korea Foundry Society
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• v.5 no.4
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• pp.258-270
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• 1985

The structures and mechanical properties of undirectionally solidified Sn-Zn eutectic alloys have been examined over the growth range 7mm/h to 6,000mm/h. The structures of unidirectionally solidified Sn-Zn eutectic alloys were primarily broken-lamellar at growth rates below 760mm/h and became fibrous at higher growth rates above that. At a growth rate 3,084mm/h the structures were fibrouse only. There is no dendrites at any growth rates, but occasionally ribbon-like morphologies were seen. The under cooling increased parabolically with growth rate increase. The hardness of specimes increased with growth rates increase but heat-treated specimen decreased after growth rates 760mm/h and became constant value. The effect of heat-treatment was good at lower growth rate. At room temperature tensile strength increased with growth rates up to R=990mm/h and then tensile strength became near-constant value. The effect of heat-treatment was well at lower growth rate.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.21-27
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• 2001

Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.1
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• pp.73-77
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• 2008

We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric polarization of organic light-emitting diodes using characteristics of impedance and equivalent circuit of $ITO/Alq_3/Al$. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of $1{\times}40Hz\;to\;1{\times}10^8Hz$. We obtained complex electrical conductivity, dielectric constant, and loss tangent(tan${\delta}$) of the device at room temperature. And, we obtained the equivalent circuit of $ITO/Alq_3/Al$ through analyzing dielectric constant and dielectric loss tangent. From these analyses, we could interpret a conduction mechanism and dielectric polarization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.