• Journal of Energy Engineering
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• v.23 no.4
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• pp.88-94
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• 2014

In this paper, Thermal Shock tests were performed varying the composition of the solder and ribbon thickness (A-type:0.2mm/60Sn40Pb, B-type:0.25mm/60Sn40Pb, C-type:0.2 /62Sn36Ag2Pb, D-type:0.25mm/62Sn36Ag2Pb) for evaluating the long-term reliability about Ribbon junction of Silicon solar cells. Thermal Shock test condition was performed during the 600cycles having $-40^{\circ}C{\sim}85^{\circ}C$ temperature range each 15 minutes; One cycle time was 30min. As a result, the initial efficiency of the A-type, B-type, and C, D-type were showed 15.0%, 15.4% and 15.8% respectively. After thermal shock test, the efficiency decreasing-rate of each type were as follow that A-type was 13.8%, B-Type was 15.4%. C-Type and D-Type was 15.3% and 16.2%, respectively. Also, degradation of surface changes and I-V characteristic curves were showed that the series resistance of the A, C-type was increased. Also, current lowering starting point of C-type shown 0.05volt[v] earlier than that of A-type. And B, D-type shown characteristics of composite lowering efficiency such as increase of series resistance, decrease of parallel resistance and cell damage. Therefore Initial solderability and efficiency of specimens using the solder with SnAgPb were superior. But, It has inferior the long-term reliability. The test was confirmed that as the ribbon thickness increases, long-term reliability of solar cell will decrease.

• Current Photovoltaic Research
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• v.11 no.4
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• pp.114-117
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• 2023

Transparent Photovoltaic (PV) modules have recently been in the spotlight because they can be applied to buildings and vehicles. However, crystalline silicon (c-Si) solar modules, which account for about 90% of the PV module market, have the disadvantage of applying transparent PV modules due to their unique opacity. Recently, a see-through type PV module using a crystalline silicon solar strap has been developed. However, there is a problem due to a decrease in aesthetics due to the metal ribbon in the center of the see-through type PV module and difficulty bonding the metal ribbon due to the low voltage output of the strap. In this study, to solve this problem, we developed a fabrication process of series connected c-Si solar strap cells using the c-Si solar cells. We succeeded in fabricating a series connected strap with a width of 2-10 mm, and we plan to manufacture an aesthetic see-through type c-Si PV module.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.2-27.2
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• 2011

Polymer electronics is the one of the most promising way to realize the flexible electronics and many studies made remarkable progress to achieve the improvement in performance of polymer electronics comparable to current silicon-based technology. PBTTT is conjugated semiconducting polymer with highly ordered, chain-extended crystalline microstructures and shows high field effect mobilities above 0.1 $cm^2/Vs$. We studied PBTTTs FETs phase and explored methods to control channel interface in various device structures. Especially, in PBTTTs' unique nano-ribbon phase, we could obtain high mobilities of up to 0.4 $cm^2/Vs$, which was not reached before. Alignment of PBTTTs film was carried out using zone casting and anisotropy of mobilities in parallel and perpendicular to the polymer chain direction was investigated. Optical anisotropy in aligned nano-ribbon PBTTT FETs was also studied using a polarized optical absorption.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.45-55
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• 2018

Environmentally benign lead-free solder coated ribbon (e. g. SnCu, SnZn, SnBi${\cdots}$) has been intensively studied to interconnect cells without lead mixed ribbon (e. g. SnPb) in the crystalline silicon(c-Si) photovoltaic modules. However, high melting point (> $200^{\circ}C$) of non-lead based solder provokes increased thermo-mechanical stress during its soldering process, which causes early degradation of PV module with it. Hence, we proposed low-temperature conductive paste (CP) based tabbing method for lead-free ribbon. Modules, interconnected by the lead-free solder (SnCu) employing CP approach, exhibits similar output without increased resistivity losses at initial condition, in comparison with traditional high temperature soldering method. Moreover, 400 cycles (2,000 hour) of thermal cycle test reveals that the module integrated by CP approach withstands thermo-mechanical stress. Furthermore, this approach guarantees strong mechanical adhesion (peel strength of ~ 2 N) between cell and lead-free ribbons. Therefore, the CP based tabbing process for lead free ribbons enables to interconnect cells in c-Si PV module, without deteriorating its performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.29-29
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• 2010

기존의 반도체 공정을 기반으로 하는 소자구조는 주로 평면의 웨이퍼상에 만들어져왔다. 그러나, 제작된 소자 어레이를 늘림이 가능한 (stretchable) 폴리머 기판에 프린팅 전이하는 방식을 이용하면 어떤 형태의 곡면에도 소자 제작이 가능해진다. 이러한 프린팅 방식으로, 다양한 곡면에 실리콘 소자 어레이를 제작한 연구결과를 발표하고자 한다. 한 응용 예로 사람의 눈과 같은 반구형 표면에 실리콘 나노 리본으로 만든 광다이오드 어레이를 배열하여 전자 눈 카메라를 제작하여 성능을 확인하였다. 또한 수차를 최소화할 수 있는 포물면에 전자눈 카메라를 제작하여 평면카메라에 비해 이미지의 균일성이 우수함을 보여주고자 한다.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.10-16
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• 2018

In silicon crystalline PV (Photo Voltaic) industry, PV module or panel electric power is directly related to the companies' profit. Thus, many PV companies have invested and focused on R&D activities to get the higher module power. The main BOM (Bills of Material) on the module consists of PV solar cell, ribbon, EVA (Ethylene-Vinyl Acetate copolymer), glass and back sheet. Based on consistent research efforts on enhancing module power using BOM, there have been increase of around 5 watt per module every year as results. However, there are lack of studies related to enhancing accuracy of measurement. In this study, the enhancing on the metrology is investigated and the improvement shows actually contribution to company's profit. Especially, the measurement issues related to heat and to quasi state of bandgap diagram by EL(Electro Luminescence) are described in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.189-194
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• 2014

In this paper, PV modules using a low-temperature conductive film(LT-CF) as a bonding material between a cell and a solder free ribbon were produced and chracterized, which is more environmental-friendly, cost effective and high efficient. Mainly, filed electrical performance of PV modules using three different types of bonding material; a convetional solder ribbon(SR), a LT-CF and a light-capturing Ribbon(LCR) were compared to comfirm the feasibility of LT-CF as a bonding material. The filed test were conducted for 3 months and results were discussed in terms of amount of output energy production and efficiency.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Resources Recycling
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• v.29 no.2
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• pp.69-77
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• 2020

With rapid increasing production and installation, recycling of photovoltaic modules has become the main issue. According to the research, the accumulation of waste modules will reach to 8600 tons in 2030. Moreover, Crystalline-silicon (c-Si) Photovoltaic modules account for more than 90% of the waste. C-Si PV modules contain 1.3% of weight of photovoltaic ribbon inside which contains the most of lead, tin and copper in the PV modules, which would cause environmental and humility problem. This study provided a valuable metal separation process for PV ribbons. Ribbons content 82.1% of Cu, 8.9% of Sn, 5.2% of Pb, and 3.1% of Ag. All of them were leached by 3M of hydrochloric acid in the optimal condition. Ag was halogenated to AgCl and precipitated. Cu ion was extracted and separated from Pb and Sn by Lix984N then stripped by 3M H2SO4. The effect of the optimal parameters of extraction was also studied in this essay. The maximum extraction efficiency of Cu ion was 99.64%. The separation condition of Pb and Sn were obtained by adjusting the pH value to 4 thought ammonia to precipitate and separate Pb and Sn. The recovery of Pb and Sn can reach 99%.