• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.54-54
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• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• 한국세라믹학회지
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• 제27권6호
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• pp.783-789
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• 1990

Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.338-341
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• 2011

대표적인 반도체 소재인 실리콘을 유연소자로 이용하기 위하여 매우 얇은 나노리본 형태로 제작하였다. p-타입과 n-타입 도핑 그리고 고유한 영역으로 구성된 실리콘 소자(p-i-n 접합소자)를 가로/세로 100라인씩 연결하여 총 10,000개의 어레이 소자를 구현하였고 그 크기는 대각선 1인치에 달했다. 이 패시브 매트릭스 소자는 p-n 접합 소자에 비해 교차 혼선에 의한 역전류가 적어 정류비가 $10_{4}$ 이상의 값을 나타내었다. 완성된 소자는 불산 처리를 통해 기판으로부터 쉽게 떼어낼 수 있으며, 각각 PDMS 와 유연한 PET 필름에 전이할 수 있었다.

• 한국결정성장학회지
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• 제4권3호
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• pp.276-283
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• 1994

Dendritic-web 방법으로 성장된 규소의 결정속에 존재하는 여러 결합을 화학적 etching 방법으로 규명하였다. Twin plan상에 존재하는 전위의loop이 관찰되었고 이들은 규소의 self - interstital이 condensation되어서 형성된 것으로 판단된다. 이들 규소의 self-interstitial은 응고 온도로 부터의 급냉에 의하여 혹은 oxide precipitation에 의하여 생성되 것으로 여겨진다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1561-1562
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1525-1526
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• 2013

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.27-29
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• 2004

The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

• 한국자기학회지
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• 제11권1호
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• pp.1-7
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• 2001

열연판을 모재로 하여 압연 및 열처리 공정을 조합한 공정을 3회 냉간압연법을 사용하여 최종두께 100$\mu\textrm{m}$로 제작한 방향성 규소강대에 대하여, 직류자기 특성 및 결정입자의 열처리 의존성, 결정방위 등을 조사하였다. 그 결과, (110)면이 거의 시료 전체표면에 성장하는 것이 관측되었으며, B$_{8}$은 1.9 T정도, 평균$\alpha$각은 약 4.6$^{\circ}$이었다. 향후 약간의 (001)조직의 집적도 개선이 추가된다면, 염가의 열연판을 모재로 사용하여 기존의 방향성 규소강판의 경우보다 훨씬 제조공정수를 단순화함으로써, 경제성이 우수한 방향성 극박 규소강대를 제작할 수 있는 가능성을 확인하였다.

• 한국주조공학회지
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• 제33권4호
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• pp.157-161
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• 2013

A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.