• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.54-54
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• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.783-789
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• 1990

Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.338-341
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• 2011

Thin silicon ribbon was used for fabricating flexible silicon p-i-n junction devices, consisting of 100${\times}$100 arrays of pixels in 1 inch on the diagonal. Those passive matrix devices exhibited the rectification ratio $>10^{4}$ owing to smaller cross-talking current than that of p-n junction devices. P-i-n devices fabricated on silica/silicon substrates are easily detached by treatment with hydrofluoric acid and are subsequently transferred onto both PDMS and flexible PET film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.276-283
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• 1994

The dislocation configuration in web-grown silicon ribbon was investigated using chemical etching techniques. The presence of dislocation loops on twin planes is observed and acounted for by self-interstitial condensation. The interstitials were either quenched in, due to the rapid cooling of the ribbon from the solidification temperatures, or produced by oxide precipitation on the twin plane. Very large faulted loops of mm size were also observed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1561-1562
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• 2013

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1525-1526
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• 2013

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.27-29
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• 2004

The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

• Journal of the Korean Magnetics Society
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• v.11 no.1
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• pp.1-7
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• 2001

We investigated to DC magnetic characteristics, the dependence of annealing temperature on the crystal grain and the crystalline orientation for grain-oriented silicon ribbon with 100 $\mu\textrm{m}$ final thickness manufactured by three times cold rolling method using the hot-rolled silicon steel plate as a raw material. The growth of (110)[001] Goss texture were almost observed in the whole area of the sample. The values of the saturation magnetic flux density B$\sub$s/ and the average ${\alpha}$ angle have 1.9 T and 4.6 degrees respectively. From this result we could be confirmed that the three times cold rolling method has a possibility of manufacture for oriented ultra-thin silicon ribbons much more simple and cheeper than the existing oriented silicon steel manufacturing method by means of more simplified producing process.

• Journal of Korea Foundry Society
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• v.33 no.4
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• pp.157-161
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• 2013

A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.