• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.245-249
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• 2013

The $HfO_X$ thin film was deposited what it has been paid attention to the next generation oxide thin layer of MOSFET (metal-Oxide semiconductor field-effect-transistor) by rf magnetron sputter on Si (100) substrate. The $HfO_X$ thin film was deposited using a various oxygen gas flows (5, 10, 15 sccm). After deposition, $HfO_X$ thin films were annealed from 400 to $800^{\circ}C$ for 20 min in nitrogen ambient. The electrical characteristics of the $HfO_X$ thin film was improved by leakage current properties, depending on the increase of oxygen gas flow and annealing temperature. In particular, the properties of nano-mechanics of $HfO_X$ thin films were measured by AFM and Nano-indenter. From the results, the maximum indentation depth at the basis of maximum indentation force was increased from 24.9 to 38.8 nm according to increase the annealing temperature. Especially, the indentation depth was increased rapidly at $800^{\circ}C$. The rapid increasement of indentation depth was expected to be due to the change of residual stress in the $HfO_X$ thin film, and this result was caused by relative flux of oxygen outgasing during the annealing process.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.580-584
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• 2001

We have investigated the deposition characteristics of Ti-Si-N films obtained by rf magnetron sputtering with ratios of Ti/Si targets in an $Ar/N_2$ gas mixture. The growth rate and stoichiometry dependence of the Ti-Si-N films on the ratio of Ti/Si and $N_2$ flow rate ratio were found to be due to the different nitriding rate of Ti and Si targets. Additionally, their different sputtering yield of nitrified Ti and Si make a reason as well. Lowering Si content in the film favored the formation of crystalline TiN, leading to the low resistivity. Increasing N content led to the Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the film is one of the most important factors determining the diffusion barrier characteristics. In the current work, the optimum process conditions for the formation of efficient diffusion barrier of Ti-Si-N film has successfully obtained by manipulating the Ti/Si ratio of target and $N_2$ flow rate ratio.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.424-428
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• 1998

Mn-Ni oxide thin films for NTC thermistor application were deposited on alumina substrates by using rf magnetron sputter. Effects of various substrate temperatures and annealing temperatures on the microstructure. crystal phase, resistivity and B constant were investigated. Microstructure of the films deposited below 178$^{\circ}C$ was fibrous microcrystalline and at 32$0^{\circ}C$and 40$0^{\circ}C$their microstructure was changed to columnar grain structure. After annealing at 90$0^{\circ}C$, the microstructure was transformed to equiaxed grain structure. Most of the phases were mixture of cubic spinel and $Mn_2O_2$ The crystal phase of the film deposited at 40$0^{\circ}C$ was changed to cubic spinel after annealing above 700"c. As the substrate temperature increased, the resistivity and B constant were greatly decreased, and these values become low and stable after annealing between $600^{\circ}C$and $700^{\circ}C$, All thin films deposited in the present study showed NTC thermistor characteristicsstics.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.14-17
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• 1999

Tin oxide films as an anode layer for microbatteries were deposited by using rf magnetron sputtering. Characterization of the films was carried out in terms of working pressure in the range of 5~30 mtorr. Rf power and substrate temperature during deposition were fixed at 2.5W/$\textrm{cm}^2$ and A.T., respectively. The crystal orientation of $SnO_2$films was changed from (110) to (101) or (211) with the increasing working pressure. Refractive index and film density of the films also decreased with the increasing working pressure. The $SnO_2$ thin film formed under optimum conditions was found to have a reversible capacity of 446.9$\mu$Ah/$\textrm{cm}^2$-$\mu\textrm{m}$ and good reversibility when the working pressure was fixed at 10mtorr. As the working pressure decreased, film density increased. It was thought that the capacity of $SnO_2$films increased due to the increase in the amount of active materials which can react with Li electrochemically. Furthermore, cycle characteristics of the anode material was also influenced by film stress.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.100.2-100.2
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• 2010

Superstrate형 실리콘 박막 태양전지에서 전면전극으로 사용되는 투명전도막의 표면형상은 태양전지내로 입사하는 태양광의 표면산란에 영향을 미치며 표면산란 증가를 통한 광 포획 및 단락전류밀도 향상을 통하여 태양전지 효율을 증대시키는 중요한 역할을 한다. 기존에 실리콘박막 태양전지용으로 많이 사용되는 상용 Asahi-U형 투명전도막은 수소 플라즈마에 대한 안정성이 낮고 입사광의 장파장 대역에서의 산란특성이 낮아 실리콘 박막 태양전지의 고효율화에 한계점이 있었다. 최근에 Asahi-U형 투명전도막을 대신하여 ZnO계 투명전도막을 전면전극으로 사용하려는 연구가 활발히 진행되고 있으며 Al을 토핑원소로 사용하는 ZnO:Al 투명전도막은 우수한 전기적, 광학적 특성과 수소플라즈마 안정성 및 저 비용 등의 우수한 장점을 갖고 있다. 스퍼터링 방식으로 제조된 ZnO:Al 투명전도막의 표면형상은 일반적으로 증착 후 습식식각을 통하여 조절되며 식각 전 박막의 미세구조에 영향을 받는 것으로 알려져 있다. 또한 습식 식각 이후의 표면거칠기에 따라 다양한 광학적, 전기적 특성을 나타낸다. 본 연구에서는 in-line RF-magnetron sputter 장비를 이용하여 다양한 공정조건하에서 ZnO:Al 투명전도막을 제조하고 증착된 박막의 미세구조 특성에 따른 습식식각 이후의 표면형상 변화 및 전기적 광학적 특성 변화를 조사하였다.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1738-1740
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.303.2-303.2
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• 2016

현재 플라즈마를 이용한 기술은 반도체, 태양광 발전, 디스플레이 등 산업의 전반적인 분야에서 특히 반도체 공정을 이용한 산업에서는 핵심적인 기술이다. 반도체 공정 중에서 박막 증착과 식각 분야에서 플라즈마를 사용한 기술은 매우 높은 가치를 지니고 있다. 중요한 플라즈마 연구로는 이론적 접근을 통한 플라즈마 소스 개발과, 기 개발된 플라즈마 소스를 적용하여 반도체 공정에 적용함으로써 최적의 조건을 찾아내며, 그에 대한 메커니즘을 연구하는 분야로 크게 분리할 수 있다. 따라서 이러한 플라즈마 기술이 발달함에 따라 nano-scale의 연구 또한 상당히 중요한 부분으로 자리 잡고 있다. 본 실험에서는 RF magnetron sputter를 사용하고 질소 유량을 0.5 sccm으로 고정하여 AlN 박막을 증착하였다. 이후 상압 플라즈마를 이용하여 식각을 진행하였다. AlN 박막 전체 표면에 대하여 3초 및 6초간 식각을 진행하였다. 이후 Nano-Indenter를 사용하여 $100{\sim}7000{\mu}N$까지 힘을 증가시키며 측정하였다. 3초간 식각을 진행한 시료의 경우 압입 깊이 대비 Hardness 그래프에서 약 40 ~ 100 nm 까지 약 2.5 GPa 정도의 차이가 발생하였고 6초간 식각을 진행한 시료의 경우 압입 깊이 대비 Hardness의 그래프에서 약 40 ~ 130 nm 까지 약 1 GPa 정도의 차이가 발생함을 확인하였다. 이후 WET-SPM 장비를 사용하여 AFM 모드를 이용하여 박막 표면이 거칠기를 확인하였다. 플라즈마 식각공정을 거치지 않은 시료의 경우 박막의 거칠기는 7.77 nm로 측정되었고 3초간 플라즈마 식각공정을 거친 시료의 경우 6.53 nm, 6초간 플라즈마 식각공정을 거친 시료의 경우 8.45 nm로 나타남을 확인할 수 있었다. 이와 같은 결과들로부터 플라즈마 식각공정은 박막의 표면에도 영향을 미치지만 박막 내부 일정 부분까지 영향을 받는 것을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.175.2-175.2
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• 2015

이 연구는 nano-indenter를 중심으로 박막의 nano-electrotribology 분석 연구로 Hafnium Nitride (HfN) 박막의 열처리 시 열적안정성에 대한 연구를 진행하였다. HfN 박막은 Copper (Cu)와 Silicon (Si)의 계면 확산방지막으로 사용될 수 있는 박막으로 현재 많은 연구소에서 다양한 연구가 진행되고 있다. HfN 박막은 Si (100)기판 위에 rf magnetron sputter로 증착되었다. 증착 시 Ar, $N_2$ 가스유량을 총 40 sccm 사용하였고 증착 후 HfN 박막을 질소분위기 furnace에서 500, $700^{\circ}C$로 각각 30분 동안 열처리 하였다. 열처리 전 후의 시료를 nano-indenter를 이용하여 nano-electrotribology 분석을 실시하였다. Nano-indenter 측정결과 열처리 전 HfN 박막 시료의 표면강도는 39.68 GPa였고 500oC 열처리 후 31.31 GPa로 감소하였다. 그러나 $700^{\circ}C$ 열처리 시 표면강도가 37.89 GPa로 다시 증가하였다. 탄성계수 측정결과도 이와 같은 경향을 나타내었는데, $500^{\circ}C$ 열처리 전 후 탄성계수가 258.99 GPa에서 201.88 GPa로 감소하였고 $700^{\circ}C$ 열처리 시 247.55 GPa로 다시 증가하였다. 이는 $500^{\circ}C$ 열처리하였을 때 박막 내에 흡착되었던 $N_2$ 가스가 빠져나가며 tensile stress가 발생하여 박막의 표면강도 감소를 유발했고 $700^{\circ}C$ 열처리 시 다시 박막 표면이 안정화되었기 때문으로 생각된다. 이를 통해 열처리 온도 변화에 의한 질소효과가 나타나 HfN 박막 표면의 물성이 달라지는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.