• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.237-243
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• 2017

We demonstrated the thin film deposition of sodium phosphorous oxynitride (NaPON) via RF magnetron sputtering of $Na_3PO_4$, as a solid-state Na-ion conductor similar to lithium phosphorous oxynitride (LiPON), which is a commonly used solid electrolyte. The deposited NaPON thin film was characterized by scanning electron microscopy, X-ray diffractometry, and electrochemical impedance spectroscopy, to investigate the feasibility of the solid-state electrolyte in several different cell configurations. The key properties of a solidstate electrolyte, i.e., ionic conductivity and activation energy, were estimated from the complex non-linear least square fitting of the measured impedance spectra at various temperatures in the range of $27-90^{\circ}C$. The ionic conductivity of the NaPON film was measured to be $8.73{\times}10^{-6}S\;cm^{-1}$ at $27^{\circ}C$, which was comparable to that of the LiPON film. The activation energy was estimated to be 0.164 eV, which was lower than that of the LiPON film (0.672 eV). The obtained values encourage the use of a NaPON thin film in the future as a reasonable solid-state electrolyte.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.71-79
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• 1995

For the fabrication of high sensitive intrinsic fiber optic Fabry-Perot interferometeric sensor, the deposition conditions of $TiO_{2}$ thin film used to the internal mirrors of the sensor were investigated. The $TiO_{2}$ film deposited by RF magnetron sputter had higher refractive index ($2.36{\sim}2.48$) and better stoiciometry (O/Ti = 2) than that deposited bye-beam evaporator. In the case of forming $TiO_{2}$ internal mirror by using fusion splicing technique, the $TiO_{2}$ reflection mirror deposited by RF magnetron sputter in the condition of 120W RF power showed high. reflectance and excellent controllability of reflection power. The fabricated intrinsic fiber optic Fabry-Perot interferometer with two $TiO_{2}$ internal mirrors deposited under the condition showed very stable fringe patterns. It is, therefore, expected that the interferometer will be applicable to various high precision sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.603-603
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• 2013

3D 배열구조의 Vertical nanowire Integrated Nanogenerator (VING)은 낮은 출력, 유연 기판 상에 부적합, 나노선의 부서지기 쉬움, 장기 안정성, 균일한 나노선의 성장을 필요로 하는 문제점을 가지고 있다. 본 연구에서는 이러한 VING방식의 단점을 보완하여 2D 배열 구조의 Lateral nanowire Integrated Nanogenerator (LING)로 고출력 전압, 유연기판의 상에 적합 등을 개선하는 방향으로 연구를 하였다. 본 연구의 실험 방법으로는 RF magnetron sputter를 이용하여 AZO Seedlayer를 제작하였으며 제작된 AZO Seedlayer를 photolithography 공정으로 제작하였다. 패터닝된 샘플을 Hydro thermal synthesis method로 성장시켰다. 구조적 분석으로는 XRD, FE-SEM 등을 이용하여 측정하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.51-51
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• 2007

기존에 있는 Ti 합금의 여러 가지 단점을 보완하기 위해 골과의 탄성계수 차이를 줄이고 독성이 없는 Ta, Nb와 같은 ${\beta}$형 안정화 원소를 Ti 와 합금하여 Ti-30Ta-(3${\sim}$15wt%)Nb 합금을 제조하여 RF-magnetron sputter를 이용하여 Ti/HA 복합코팅을 하여 코팅된 합금의 전기화학적 특성을 조사하였다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2385-2390
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• 2009

N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, $N_2O$ gas was employed as a dopant source and various deposition conditions such as $N_2O$ gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.789-794
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• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.