• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.365-365
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• 2013

본 실험에서는 RF magnetron sputter장비와 evaporator장비를 이용하여 다층박막 IGZO/Ag/IGZO를 제작하였다. 소결된 타겟은 In:Ga:ZnO 1:1:1mol%로 조성된 타겟을 사용하였으며, Ag는 99.999%의 순도를 가진다.다층박막 OMO구조의 Oxide layer는sputter장비를 이용 IGZO막을 제작하였으며, Metal layer는 evaporator 장비를 이용 Ag막을 제작하였다. 변수로는 Metal layer 두께에 따른 구조적, 광학적 특성 변화를 연구하였다. Oxide layer의 RF sputter 공정 조건으로는 초기압력 $3.0{\times}10^{-6}$ Torr 이하로 하였으며, 증착압력 $2.0{\times}10^{-2}$ Torr, RF power 30 W, Ar 50 sccm으로 고정시켰으며, Metal layer의 evaporator 공정조건으로는 $5.0{\times}10^{-6}$ 이하, 전압은 0.3V, 기판 회전속도는 2RPM 두께는 Thickness moniter로 3. 5. 7. 9. 11. 13. 15 nm를 확인하며 증착하였다. 분석결과로는 AFM측정결과 거칠기는 2 nm이하의 거칠기를 확인했으며, XRD측정결과 Bragg's 법칙($2\;dsin{\Theta}=n{\lambda}$)를 만족하는 피크를 찾을 수 없어 비정질 구조임을 확인할 수 있었다. 투과도 측정결과 가시광 영역에서 최대 80% 이상의 투과율을 보여주었으며, IR영역에서는 30% 이하의 투과율을 보여주었다. 에너지 밴드갬 계산결과 4.5~4.6 eV를 갖는 것을 확인하였으며, Low-e 분야에 사용가능함을 보여주었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.305.1-305.1
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• 2016

페로브스카이트 태양전지는 차세대 태양전지로써 몇 년 사이에 매우 큰 폭으로 효율이 증가하고 있으며 활발한 연구가 진행되고 있다. 페로브스카이트의 태양전지의 구조는 전자전도체, 페로브스카이트 광흡수체, 정공전도체, 전극으로 구성된다. 전자전도체는 전자 포집성이 우수한 다공성 TiO2 층과 TiO2 박막 층으로 구성된다. 균일한 박막 TiO2를 형성하는 것은 페로브스카이트 태양전지의 개방전압 특성에 기여한다. TiO2 박막을 제조하는 방법으로써 용액을 사용한 스핀 코팅 법은 간편하게 제조가 가능하나, 일정한 두께의 박막을 형성하지 못하고 균일하지 못하는 단점을 가진다. 본 연구에서는 RF 마그네트론 스퍼터를 이용하여 보다 균일한 TiO2 박막을 제조하였다. X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Light IV, Quantum Efficiency (QE)로 분석하였다. 이를 통하여 제조방법 차이에 따른 페로브스카이트 태양전지의 영향을 분석하였다.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.514-519
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• 2017

TiN (titanium nitride) films were prepared using the RF magnetron sputtering technique. The films were deposited by pure $N_2$ plasma sputtering. Their mechanical properties, such as nano-indentation hardness, friction coefficient, and surface wettability, have been investigated. X-ray diffraction (XRD) studies revealed that the orientation of $TiN_X$ films changed towards the (111) orientation with decreasing working pressure due to a strong compressive stress during deposition. The strongest TiN (111) orientation was found when the film was deposited at a working pressure of 1 Pa. This film showed the largest hardness (16 GPa) and smallest friction coefficient (0.17) among the studied samples. Moreover, this film was found to be accompanied by a water-repellent surface with water contact angle more than $100^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.218-219
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• 2009

$TiO_2$ thin films were deposited on si wafer and glass substrates by rf magnetron sputtering. The films were coated under argon atmosphere at different working pressures: 3mTorr, 5mTorr, 7mTorr, 10mTorr. The films were annealed at $550^{\circ}C$ for 5h after deposition. Film structures were analyzed with XRD, As the increase of working pressure, $TiO_2$ films have been good crystallinity. At 3mTorr and 5mTorr, the films were observed in rutile phase and anatase phase.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.185-185
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• 2003

TiN 박막을 Ti 타겟을 이용하여 Si(001) 기판위에 반응성 RF 마그네트론 스퍼터 방법으로 제조하였다. 반응성 스퍼터링시 온도를 $600^{\circ}C$로 고정하고 $N_2$/Ar비, 공정압력, RF파워를 변화시키면서 박막을 제조하였고 각각의 공정조건에 따른 TiN 박막의 결정성 변화를 XRD, SEM, TEM, HRTEM을 이용하여 조사하였다. 그 결과 TiN 박막은 $N_2$/Ar비가 작을 경우 공정압력이 커짐에 따라 (001) 배향에서 (111) 배향으로 바뀜을 확인하였다. 또한 $N_2$/Ar비가 클 경우는 공정압력이 증가함에 따라(001) 우선 배향성이 향상됨을 확인하였다. 이런 결정성 변화가 전기적 특성에 미치는 영향에 관하여 논의할 것이다.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.82-88
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• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.123-132
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• 2000

Cerium substituted YIG thin films were grown by rf magnetron sputter techniques. We investigated the effects of post-deposition heat-treatment as well as various deposition parameters such as substrate materials, substrate temperature. sputter power, and sputter gas types on the crystallinity, chemical composition, microstructure and magnetic characteristics of the films. Post-deposition heat treatment over 750 $\^{C}$ was applied to crystallize as-prepared amorphous films, and a strong tendency of particular crystallographic planes tying parallel to substrate surface was observed for the post-deposition heat-treated films on GGG substrate. The chemical composition of the films exhibited a wide range of chemical stoichiometry depending on the oxygen fraction of sputter gas, and in particular the composition of the film deposited in sputter gas with an oxygen fraction of R = 10% was Ce$\_$0.23/Y$\_$1.30/Fe$\_$3.50/O$\_$12/. With raising the temperature of post-deposition heat-treatment from 900 $\^{C}$ to 1100 $\^{C}$, the surface roughness of the film on GGG substrates increased from about 3 nm to 40 nm, but their coercive force and ferromagnetic resonance line width decreased from 0.477 kA/m to 0.369 kA/m and from 12.5 kA/m to 8.36 kA/m, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.367-367
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• 2012

TTFT에 투명반도체로 사용되고 있는 IGZO 박막의 특성을 조사하였다. IGZO박막은 비정질임에도 불구하고 높은 이동도를 가지는 것으로 알려져 있다. 본 실험에서는 RF magnetron sputtering법을 이용하여 Ar Gas 유량 변화에 따른 IGZO 박막을 유리 기판 위에 제작 하였고 투명반도체의 구조적, 광학적, 전기적 특성을 조사하였다. 소결된 타겟 으로는 In:Ga:ZnO를 각각 1:1:2mol%의 조성비로 혼합하여 이용하였으며, $30{\times}30mm$의 XG Glass 유리기판에 Sputtering 방식으로 증착하였다. 공정 조건으로는 초기합력은 $2.0{\times}10^{-6}Torr$이하로 하였으며, 증착 압력은 $2.0{\times}10^{-2}Torr$로 하였다. Rf power를 75 W로 고정시켰다. 실험 변수로는 Ar Gas를 25, 50, 75, 100 sccm으로 변화를 주어 실험을 진행하였으며, 증착온도는 실온으로 고정하였다. 분석 결과로는 Ar Gas가 75 sccm일 때 XRD분석결과 $34^{\circ}$ 부근에서 (002) c-축 방향성 구조임을 확인할 수 있었으며, AFM분석결과 0.3 nm이하의 Roughness를 가졌다. UV-Visible-NIR 측정결과 가시광선 영역에서 85%이상의 투과도를 만족 시켰으며, Hall 측정결과 Carrier concentration $8.3{\times}101^{19}cm-^{-3}$, Mobility $12.3cm^2/v-s$이며, Resistivity $0.6{\times}10^{-2}{\Omega}-cm$, 투명반도체로 사용 가능함을 확인 할 수 있었다.