• Journal of the Korean Society for Precision Engineering
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• v.17 no.10
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• pp.17-25
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• 2000

• Korean Journal of Computational Design and Engineering
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• v.11 no.4
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• pp.265-272
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• 2006

For the design and analysis of 3D object featuring complexity and irregularity in shape, sectional digital images measured by an industrial CT scanner are employed to generate a finite element model with uniform voxels. The voxel model plays a key role in developing an integrated reverse engineering system including geometric modeling, simulation and optimization. Design examples applied to topology optimization show that the proposed approach can provide a remarkable reduction in time cost at the conceptual and detail design stages.

• Design & Manufacturing
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• v.9 no.1
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• pp.18-22
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• 2015

Mold making and product manufacturing process was made by a die through a number of stages. Thereby, it takes a long period of time from the manufacture of mold until passed the products to consumers. However, it is not possible to meet the diverse desires purchasing of consumer. We made a 3D CAD Model aligned with product scan data using reverse engineering. Utilizing thereafter flow analysis to derive the optimal mold conditions, by applying the condition, and devised a mold fabrication process that is much shorter than the conventional process for fabricating a mold. In this study, the outlet cover to the product, it describes a process, as a result, it was confirmed that the number of steps can be shortened much more than the conventional process.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.396-405
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• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• Journal of Power System Engineering
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• v.19 no.1
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• pp.70-75
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• 2015

The influence of reversed austenite on the damping capacity in austenitic stainless steel with two phase of martensite and reversed austenite was investigated. The two phases of deformation induced martensite and reversed austenite was obtained by an reverse annealing treatment at $500^{\circ}C{\sim}700^{\circ}C$ for various time after 70% cold rolling. With an increase of the reverse annealing treatment temperature and time, volume fraction of reversed austenite was rapidly increased. With an increase of volume fraction of reveresd austenite, damping capacity was rapidly increased. At same volume of reveresd austenite, damping capacity of reversed austenite obtained by reverse annealing treatment at $700^{\circ}C$ for various time was higher then reveresd austenite obtained by reverse annealing treatment at $500^{\circ}C{\sim}700^{\circ}C$ for 10min. Thus, the damping capacity was affected greatly by reversed austenite obtained by annealing treatment at $700^{\circ}C$ for various time.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.4
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• pp.313-319
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• 1999

The reverse transformation behavior was investigated by DSC analysis in thermomechanically processed Fe-30%Ni-0.35%C alloy. Upon increasing the heating rate from $5^{\circ}C/min$ to $80^{\circ}C/min$, the As point of the ausformed martensite was not changed and the As point of the marformed martensite decreased at reverse transformation. The Af points showed to be constant with increasing the heating rate both in the ausformed martensite and in the marformed martensite. With increasing the deformation degree, the As points of the ausformed martensite and the marformed martensite increased and the Af points appeared to be constant, structures. The enthalpy changes increased with increasing the heating rate, but decreased with increasing the deformation degree in both structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.707-711
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• 2016

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.740-754
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• 2015

This paper focuses on the reverse blocking busbar protection scheme with aim to improve the speed of its operation and at the same time to increase operational reliability, flexibility and stability of the protection during external and internal faults by implementation of the extended functionality provided by the IEC61850 standard-based protective Intelligent Electronic Devices (IEDs). The practical implementation of the scheme by the use of IEC 61850 standard communication protocol is investigated. The proposed scheme is designed for a radial type of a distribution network and is modeled and simulated in the DigSILENT software environment for various faults on the busbar and its outgoing feeders. A laboratory test bench is built using three ABB IEDs 670 series that are compliant with the IEC 61850 standard, CMC 356 Omicron test injection device, PC, MOXA switch, and a DC power supplier. Two types of the reverse blocking signals between the IEDs in the test bench are considered: hard wired and Ethernet communication by using IEC 61850 standard GOOSE messages. Comparative experimental study of the operational trip response speeds of the two implementations for various traffic conditions of the communication network shows that the performance of the protection scheme for the case of Ethernet IEC 61850 standard-based communication is better.

• Journal of the Korean Society for Heat Treatment
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• v.11 no.1
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• pp.35-45
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• 1998

The effects of alloying elements and the conditions of reverse transformation studied treatment on the formation of retained austenite in 0.15C-6%Mn-(Ti, Nb) steels has been studied. The addition of Ti and Nb to 0.15C-6%Mn steel shows no effect on the formation of retained austenite. In case of reverse transformation treatment at various temperatures, the shape of retained austenite was lath type, growing toward the longitudinal and thickness direction with increasing the heat treatment temperatures. The retained austenite formed by the reverse transformation treatment at higher temperature has a lot of stacking faults induced by the internal stress. The retained austenite was stabilized chemically by enrichment of C and Mn in the vicinity of a untransformed austenite and the chemical stability of retained austenite was decreased with increasing the heat treatment temperature and the holding time. It was effective to heat treat at $650^{\circ}C$ in order to obtain over 30vol.% of retained austenite, but more desirable to heat treat at $625^{\circ}C$ for a long time, considering the amount and quality of retained austenite.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.