• 전력전자학회논문지
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• 제24권5호
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• pp.327-333
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• 2019

This study analyzes the reverse recovery phenomenon of a semi-bridgeless rectifier (SBR) in an inductive power transfer (IPT) system for electric vehicles. Ideally, the reverse recovery phenomenon does not occur in a diode rectifier, however, in practical systems, the reverse recovery phenomenon occurs even when the SBR operates like a diode rectifier due to high operating frequency. Therefore, a practical analysis of operation modes for SBRs is presented in this study, considering the reverse recovery phenomenon, and the requirements for SBR switches are proposed. The analysis results are experimentally verified using a 3.3 [kW] IPT system prototype to which three different types of switches are applied.

• Journal of Power Electronics
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• 제19권3호
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• pp.827-834
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• 2019

Wireless power transfer via coupled magnetic resonances has been a hot research topic in recent years. In addition, the number of related devices has also been increasing. However, reverse signals transfer is often required in addition to wireless power transfer. The structure of the circuit for a wireless power transfer system via coupled magnetic resonances is analyzed. The advantages and disadvantages of both parallel compensation and series compensation are listed. Then the compensation characteristics of the inductor, capacitor and resistor were studied and an appropriate compensation method was selected. The reverse signals can be transferred by controlling the compensation of the resistor. In addition, it can be demodulated by extracting the change of the primary current. A 3.3 MHz resonant frequency with a 100 kHz reverse signals transfer system platform was established in the laboratory. Experimental results demonstrate that wireless power and reverse signals can be transferred synchronously.

• 전기전자학회논문지
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• 제19권1호
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• pp.94-100
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• 2015

본 논문에서는 U-MOSFET 내부의 기생 body 다이오드(PN diode)를 쇼트키 body 다이오드(Schottky body diode)로 대체한 50V급 전력 U-MOSFET을 제안하였다. 쇼트키 다이오드는 PN 다이오드와 비교 시, 역 회복 손실(reverse recovery loss)을 감소시킬 수 있는 장점을 가지고 있다. 따라서 전력 MOSFET의 기생 body 다이오드를 쇼트키 body 다이오드를 대신함으로써 역 회복 손실을 최소화 할 수 있다. 제안된 쇼트키 body 다이오드(Schottky body diode) U-MOSFET(SU-MOS)를 conventional U-MOSFET(CU-MOS)와 전기적 특성을 비교한 결과, 전달(transfer) 및 출력(output)특성, 항복(breakdown)전압 등 정적(static) 특성의 변화 없이 감소된 역 회복 손실을 얻을 수 있었다. 즉, 쇼트키 다이오드의 폭(width)이 $0.2{\mu}m$, 쇼트키 장벽 높이(Schottky barrier height)가 0.8eV일 때 첨두 역전류(peak reverse current)는 21.09%, 역 회복 시간(reverse recovery time)은 7.68% 감소하였고, 성능지수(figure of merit(FOM))는 35% 향상되었다. 제안된 소자의 특성은 Synopsys사의 Sentaurus TCAD를 사용하여 분석되었다.

• Journal of Power Electronics
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• 제17권5호
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• pp.1372-1381
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• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• 전력전자학회논문지
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• 제24권6호
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• pp.396-405
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• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• 터널과지하공간
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• 제26권4호
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• pp.253-265
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• 2016

본 연구에서는 reverse RFID 시스템을 이용하여 지하광산 현장에 투입되는 장비들의 이동시간을 측정하였다. Reverse RFID 시스템에서는 리더기와 안테나가 광산 장비에 탑재되며 태그는 지하광산의 갱도에 부착된다. 실내 모사실험을 통해 장비에 설치되는 RFID 리더기의 송출 전력 크기에 따라 상이하게 나타나는 태그 인식범위와 태그 인식률의 변화를 파악하였다. 그 결과 리더기의 송출 전력 크기가 작아질수록 태그 인식 범위가 좁아져 정밀한 이동시간 측정이 가능해졌으나, 태그 인식률은 떨어지는 것을 확인할 수 있었다. 현장실험 결과 본 연구에서 사용한 RFID 장비의 경우 송출 전력을 28 dBm으로 설정하는 것이 태그의 인식률을 유지하면서 측정오차를 줄일 수 있는 것으로 나타났다. 또한, 현장 실험 결과를 통해 reverse RFID 시스템이 지하광산에서 운반 트럭의 이동시간 측정자료 수집을 위해 성공적으로 사용될 수 있음을 확인할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.942-943
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• 2008

The boost converter is usually used in power factor correction. The dynamic losses of its output diode are produced during the reverse recovery time. The power efficiency is decreased due to the losses and also it generates the noise. These disadvantages have been remarkably improved by ZCS and ZVS techniques of power factor improvement circuit. Some benefits lead to the achievement of higher power density and the development cost can be decreased. In this paper work, the reverse recovery suppression(RS) PFC method is used. A inductor and a diode are added into the conventional circuit. The switching device, MOSFET is turned off after the reverse recovery current has come to the zero level. The Zero Current Switching(ZCS) is implemented at that time. This power conversion technique improves the efficiency to about 1% and reduces the noise obviously. And the additional inductor can be designed using an original filter core in the circuit. The converter size is reduced effectively.

• 한국통신학회논문지
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• 제29권8A호
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• pp.868-878
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• 2004

본 논문에서는 멀티미디어 트래픽을 효율적으로 서비스하기 위해 CDMA 순방향 링크에 제안되었던 Zone-based 전력제어 방식(1)의 역방향 링크 적용 타당성을 검증 및 분석하였다. Zone-based 전력제어 방식을 운용하기 위해서는 각 트래픽 채널에 할당되는 최대 전력량이 결정되어야 한다. 순방향 링크에서는 기지국의 전력 자원을 다수의 트래픽 채널이 공유하기 때문에 각 트래픽 채널에 할당 가능한 최대 전력 자원을 결정하는 메커니즘이 요구되지만, 역방향 링크에서는 서비스 단말별로 전송되는 트래픽 채널에 할당 가능한 최대 전력 자원이 결정되어져 있는 특성으로 인해 Zone-based 전력제어 방식이 쉽게 구현될 수 있다. 실험 결과는 Zone-based 전력제어 방식이 기존의 전력제어 방식에 비해 전력 소비량과 이동국의 트래픽 성능에 있어서 향상된 결과를 보여주었다. 결국 Zone-based 전력제어 방식은 멀티미디어 트래픽 환경에서 고속 데이터호의 서비스 반경을 셀의 전체 서비스 반경으로 확보할 수 있게 하고, 시스템 내에 생성되는 간섭 량을 억제하여 저속 음성호의 QoS도 적절히 보장해줄 수 있는 방안임을 확인하였다.

• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.