• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.5
• /
• pp.327-333
• /
• 2019

This study analyzes the reverse recovery phenomenon of a semi-bridgeless rectifier (SBR) in an inductive power transfer (IPT) system for electric vehicles. Ideally, the reverse recovery phenomenon does not occur in a diode rectifier, however, in practical systems, the reverse recovery phenomenon occurs even when the SBR operates like a diode rectifier due to high operating frequency. Therefore, a practical analysis of operation modes for SBRs is presented in this study, considering the reverse recovery phenomenon, and the requirements for SBR switches are proposed. The analysis results are experimentally verified using a 3.3 [kW] IPT system prototype to which three different types of switches are applied.

• Journal of Power Electronics
• /
• v.19 no.3
• /
• pp.827-834
• /
• 2019

Wireless power transfer via coupled magnetic resonances has been a hot research topic in recent years. In addition, the number of related devices has also been increasing. However, reverse signals transfer is often required in addition to wireless power transfer. The structure of the circuit for a wireless power transfer system via coupled magnetic resonances is analyzed. The advantages and disadvantages of both parallel compensation and series compensation are listed. Then the compensation characteristics of the inductor, capacitor and resistor were studied and an appropriate compensation method was selected. The reverse signals can be transferred by controlling the compensation of the resistor. In addition, it can be demodulated by extracting the change of the primary current. A 3.3 MHz resonant frequency with a 100 kHz reverse signals transfer system platform was established in the laboratory. Experimental results demonstrate that wireless power and reverse signals can be transferred synchronously.

• Journal of IKEEE
• /
• v.19 no.1
• /
• pp.94-100
• /
• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• Journal of Power Electronics
• /
• v.17 no.5
• /
• pp.1372-1381
• /
• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.495-502
• /
• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.6
• /
• pp.396-405
• /
• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• Tunnel and Underground Space
• /
• v.26 no.4
• /
• pp.253-265
• /
• 2016

In this study, travel time data collection of mine equipments was conducted in an underground mine using a reverse Radio Frequency IDentification (RFID) system. In the reverse RFID system, RFID readers and antennas are mounted on mine equipments, and RFID tags are attached to the underground mine gallery. Indoor experiments were performed to analyze how RFID reader transmission power levels affect tag readable area and tag recognition rates. The results showed that travel time measurement become precise when the reader transmission power was reduced, however tag recognition rates were reduced. The field experiments indicated that setting the reader transmission power to 28 dBm maintained the tag recognition rate while minimizing the tracking location error. In addition, the results revealed that the reverse RFID system can be used successfully in an underground mine to collect the travel time data of haulage trucks.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.942-943
• /
• 2008

The boost converter is usually used in power factor correction. The dynamic losses of its output diode are produced during the reverse recovery time. The power efficiency is decreased due to the losses and also it generates the noise. These disadvantages have been remarkably improved by ZCS and ZVS techniques of power factor improvement circuit. Some benefits lead to the achievement of higher power density and the development cost can be decreased. In this paper work, the reverse recovery suppression(RS) PFC method is used. A inductor and a diode are added into the conventional circuit. The switching device, MOSFET is turned off after the reverse recovery current has come to the zero level. The Zero Current Switching(ZCS) is implemented at that time. This power conversion technique improves the efficiency to about 1% and reduces the noise obviously. And the additional inductor can be designed using an original filter core in the circuit. The converter size is reduced effectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.8A
• /
• pp.868-878
• /
• 2004

In this paper, we analyse feasibility of Zone-based Power Control (ZPC) scheme introduced for CDMA forward link(1) in the reverse link. To operate ZPC scheme in the CDMA systems the maximum power level that can be allocated to each traffic channel should be determined. Because all the service channels share the whole power resource in the forward lint a specific mechanism that determines Maximum power resource to each traffic channel is required to operate ZPC scheme in the forward link. However, ZPC scheme can be easily adopted to the reverse link, because of the fact that the whole power resource of service terminal is only confined to its traffic channel. In other words, we need not to determine the maximum power resource to be allocated in the reverse traffic channel. Simulation results show that ZPC scheme adopted to the reverse link yields a significant performance improvement compared with the conventional TPC(IS-95 TPC) scheme in terms of the power consumption and the traffic capacity of Portables, especially with the increasing number of high-rate data traffics. With the proposed scheme, not only be extended the service coverage of high-rate data traffic to the entire cell service coverage, but also the QoS of low-rate traffic can keep going through the service time, especially, in the situation that the incoming interference is much larger.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.3
• /
• pp.216-221
• /
• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.