• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.1-4
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• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• The Korean Journal of Applied Statistics
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• v.34 no.2
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• pp.167-175
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• 2021

Semi-supervised learning uses both labeled data and unlabeled data. Recently consistency regularization is very popular in semi-supervised learning. Unsupervised data augmentation (UDA) that uses unlabeled data augmentation is also based on the consistency regularization. The Kullback-Leibler divergence is used for the loss of unlabeled data and cross-entropy for the loss of labeled data through UDA learning. UDA uses techniques such as training signal annealing (TSA) and confidence-based masking to promote performance. In this study, we propose to use Jensen-Shannon divergence instead of Kullback-Leibler divergence, reverse-TSA and not to use confidence-based masking for performance improvement. Through experiment, we show that the proposed technique yields better performance than those of UDA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.25-34
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• 2002

In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.