• Journal of IKEEE
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• v.19 no.1
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• pp.94-100
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• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.640-645
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• 2012

DC-DC converter and DC-AC inverter in a hybrid electric vehicle (HEV) generate the switching noise. It may be generated by the reverse recovery operation of the power diode in the switching circuit of the converter or the inverter. The shape of the reverse recovery region may be determined by both reverse time and recovery time in the diode. So, in this paper, the frequency spectrum of switching noise was estimated by the shape of the reverse recovery region and compared with the measured results. It shows that the meaningful region of the frequency spectrum is directly related with the reverse time.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• Journal of Power Electronics
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• v.14 no.2
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• pp.265-270
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• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• Journal of IKEEE
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• v.24 no.2
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• pp.586-591
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• 2020

An interleaved current-fed high step-up DC-DC converter is proposed. Besides high voltage gain, a low ripple input current is achieved by adopting interleaving operation. Moreover, soft-switching characteristic of the proposed converter reduces switching losses of active power switches and raise the conversion efficiency. The reverse-recovery problem of output rectifiers is also alleviated by controlling the current changing rates of diodes by utilizing the leakage inductances of transformers. Experimental results obtained on a 200W prototype are discussed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1394-1400
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• 2010

This paper introduces a newly improved Ultra-FRFET that has much better reverse recovery characteristic than that of the typical MOSFET and presents its effectiveness in the HV-BLU system of LCD TVs. The reverse recovery time, $T_{rr}$ of Ultra-FRFET is shorter than 40nsec and the peak value of reverse current, $i_{rr}$ is also much smaller compared to the typical MOSFET's, which are sufficient to prevent the MOSFET’s failures without additional FRDs and diodes in HV-BLU system with a half-bridge resonant inverter topology worked by PWM method. In order to verify the validity, the loss analysis and the implementation results in cases when both the conventional solution using typical MOSFETs with additional FRDs and a new solution using Ultra-FRFETs are applied to a HV-BLU of 40" LCD TV are presented. As a result, the effectiveness of Ultra-FRFET was verified and the results are presented in this paper.

• Journal of Power Electronics
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• v.11 no.1
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• pp.16-20
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• 2011

This paper presents a zero-voltage-switching (ZVS) boost converter using a coupled inductor. It utilizes an additional winding to the boost inductor and an auxiliary diode. The ZVS characteristic of the proposed converter reduces the switching losses of the active power switches and raises the power conversion efficiency. The principle of operation and a system analysis are presented. The theoretical analysis and performance of the proposed converter were verified with a 100W experimental prototype operating at a 107 kHz switching frequency.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1683-1693
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• 2017

This paper analyses the harmonic pollution to power grids caused by thyristor-controlled devices. It also formulates a mathematic derivation for the voltage spikes in thyristor-controlled branches to explain the harmonic and EMI derived from the reverse-recovery characteristics of the thyristor. With an equivalent nonlinear time-varying voltage source, a detailed simulation model is established, and the periodic dynamic switching characteristic of the thyristor can be explicitly implied. The simulation results are consistent with the probed results from on-site measurements. An improved trigger system with gate-shorted circuit structure is proposed to reduce the voltage spikes that cause EMI. The experimental results indicate that a prototype with the improved trigger system can effectively suppress the voltage spikes.

• PNF and Movement
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• v.4 no.1
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• pp.27-36
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• 2006

Purpose : The main purpose of this study was to investigate the effect on Balance Ability of Knee Osteoarthritis(OA) by Lower Extremity Patterns with dynamic reverse in Proprioceptive Neuromuscular Facilitation(PNF). Methods : The subjects were consisted of 30 women patients with knee OA. All subjects were randomly assigned to PNF group. Each group had a treatment for 30 minutes per day and three times a week during 8 weeks period. Was used to measure recovery or worse of patient's condition, muscle assessment questionnaire(MAQ) was used to measure patient' s muscular strength, Endurance, coordination/balance, KWOMAC was used to pain, stiffness, and physical function, and BPM was used to measure path, anterior-posterior. Results : This study results in following conclusons. 1. MAQ score was significantly decreased in PNF group(p<.05). 2. KWOMAC score was significantly decreased in PNF group(p<.05). 3. BPM were score was significantly decreased in PNF group(p>.05). Conclusion : From this result the PNF treatment retrogression characteristic will be effective in treatment of patient, with the arthritis and widely may be applied at a therapist.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.221-221
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• 2006

The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.