• 전기전자학회논문지
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• 제19권1호
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• pp.94-100
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• 2015

본 논문에서는 U-MOSFET 내부의 기생 body 다이오드(PN diode)를 쇼트키 body 다이오드(Schottky body diode)로 대체한 50V급 전력 U-MOSFET을 제안하였다. 쇼트키 다이오드는 PN 다이오드와 비교 시, 역 회복 손실(reverse recovery loss)을 감소시킬 수 있는 장점을 가지고 있다. 따라서 전력 MOSFET의 기생 body 다이오드를 쇼트키 body 다이오드를 대신함으로써 역 회복 손실을 최소화 할 수 있다. 제안된 쇼트키 body 다이오드(Schottky body diode) U-MOSFET(SU-MOS)를 conventional U-MOSFET(CU-MOS)와 전기적 특성을 비교한 결과, 전달(transfer) 및 출력(output)특성, 항복(breakdown)전압 등 정적(static) 특성의 변화 없이 감소된 역 회복 손실을 얻을 수 있었다. 즉, 쇼트키 다이오드의 폭(width)이 $0.2{\mu}m$, 쇼트키 장벽 높이(Schottky barrier height)가 0.8eV일 때 첨두 역전류(peak reverse current)는 21.09%, 역 회복 시간(reverse recovery time)은 7.68% 감소하였고, 성능지수(figure of merit(FOM))는 35% 향상되었다. 제안된 소자의 특성은 Synopsys사의 Sentaurus TCAD를 사용하여 분석되었다.

• 한국전자파학회논문지
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• 제23권5호
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• pp.640-645
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• 2012

하이브리드 전기 차량 내에 존재하는 DC-DC 컨버터 또는 DC-AC 인버터에 의해 스위칭 잡음이 발생된다. 이 스위칭 잡음은 컨버터 또는 인버터의 스위칭 회로 내에 존재하는 전력 다이오드의 역 회복 동작에 의해 발생된다. 다이오드의 반전 시간과 역 회복 시간이 역 회복 구간의 모양을 결정한다. 본 논문은 스위칭 잡음의 주파수 스펙트럼을 다이오드 역 회복 구간의 모양을 통해 예측하고, 측정 결과와 비교하여 주요 주파수 구간이 다이오드의 반전 시간과 직접적인 연관이 있다는 것을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• Journal of Power Electronics
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• 제14권2호
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• pp.265-270
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• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• 전기전자학회논문지
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• 제24권2호
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• pp.586-591
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• 2020

본 논문에서는 인터리브된 전류 주입형 고승압 DC-DC 컨버터가 제안된다. 높은 전압 이득 외에도 인터리빙 방식을 채택하여 낮은 리플 입력 전류가 달성된다. 또한 제안 된 컨버터의 소프트 스위칭 특성은 전력 스위치의 스위칭 손실을 줄이고 변환 효율을 높인다. 변압기의 누설 인덕턴스를 활용하여 다이오드의 전류 변화율을 제어함으로써 출력 정류기의 역 회복 문제도 완화된다. 200W 프로토 타입에서 얻은 실험 결과에 대해 설명한다.

• 전기학회논문지
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• 제59권8호
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• pp.1394-1400
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• 2010

This paper introduces a newly improved Ultra-FRFET that has much better reverse recovery characteristic than that of the typical MOSFET and presents its effectiveness in the HV-BLU system of LCD TVs. The reverse recovery time, $T_{rr}$ of Ultra-FRFET is shorter than 40nsec and the peak value of reverse current, $i_{rr}$ is also much smaller compared to the typical MOSFET's, which are sufficient to prevent the MOSFET’s failures without additional FRDs and diodes in HV-BLU system with a half-bridge resonant inverter topology worked by PWM method. In order to verify the validity, the loss analysis and the implementation results in cases when both the conventional solution using typical MOSFETs with additional FRDs and a new solution using Ultra-FRFETs are applied to a HV-BLU of 40" LCD TV are presented. As a result, the effectiveness of Ultra-FRFET was verified and the results are presented in this paper.

• Journal of Power Electronics
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• 제11권1호
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• pp.16-20
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• 2011

This paper presents a zero-voltage-switching (ZVS) boost converter using a coupled inductor. It utilizes an additional winding to the boost inductor and an auxiliary diode. The ZVS characteristic of the proposed converter reduces the switching losses of the active power switches and raises the power conversion efficiency. The principle of operation and a system analysis are presented. The theoretical analysis and performance of the proposed converter were verified with a 100W experimental prototype operating at a 107 kHz switching frequency.

• Journal of Power Electronics
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• 제17권6호
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• pp.1683-1693
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• 2017

This paper analyses the harmonic pollution to power grids caused by thyristor-controlled devices. It also formulates a mathematic derivation for the voltage spikes in thyristor-controlled branches to explain the harmonic and EMI derived from the reverse-recovery characteristics of the thyristor. With an equivalent nonlinear time-varying voltage source, a detailed simulation model is established, and the periodic dynamic switching characteristic of the thyristor can be explicitly implied. The simulation results are consistent with the probed results from on-site measurements. An improved trigger system with gate-shorted circuit structure is proposed to reduce the voltage spikes that cause EMI. The experimental results indicate that a prototype with the improved trigger system can effectively suppress the voltage spikes.

• PNF and Movement
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• 제4권1호
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• pp.27-36
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• 2006

Purpose : The main purpose of this study was to investigate the effect on Balance Ability of Knee Osteoarthritis(OA) by Lower Extremity Patterns with dynamic reverse in Proprioceptive Neuromuscular Facilitation(PNF). Methods : The subjects were consisted of 30 women patients with knee OA. All subjects were randomly assigned to PNF group. Each group had a treatment for 30 minutes per day and three times a week during 8 weeks period. Was used to measure recovery or worse of patient's condition, muscle assessment questionnaire(MAQ) was used to measure patient' s muscular strength, Endurance, coordination/balance, KWOMAC was used to pain, stiffness, and physical function, and BPM was used to measure path, anterior-posterior. Results : This study results in following conclusons. 1. MAQ score was significantly decreased in PNF group(p<.05). 2. KWOMAC score was significantly decreased in PNF group(p<.05). 3. BPM were score was significantly decreased in PNF group(p>.05). Conclusion : From this result the PNF treatment retrogression characteristic will be effective in treatment of patient, with the arthritis and widely may be applied at a therapist.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.221-221
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• 2006

The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.