• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.5-5
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• 2011

Raman spectroscopy has become one of the most widely used tools in graphene research. The resonant Raman scattering process that gives rise to the observed strong Raman signal carries information regarding the electronic structure as well as the structural properties. When polarization of the incident excitation laser light or the scattered signal is carefully controlled, more information on the electronic and structural properties becomes available. In this tutorial, the basics of polarized Raman scattering experiments will be introduced first. Then several examples from real research will be highlighted to illustrate the application of polarized Raman spectroscopy in graphene research.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.337-344
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• 1995

We have detected the resonant stimulated Raman scattering signal when the Q-switched Nd:YAG laser beam are incident on the $35~62{\mu}m$ sized water droplet as pump beam. The signals appeared as uniformly spaced peaks and the intervals between peaks become narrow as the droplet size increases. Also we have confirmed the morphology dependent resonances (MDR's) characteristic of the stimulated Raman scattering signal when the water droplet becomes nearly spherical shape after two water droplets are coupled to a droplet. The error in the measured intervals between MDR's of same mode order is about 5%.out 5%.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.162-167
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• 2006

The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.425-426
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• 2008

• Current Optics and Photonics
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• v.7 no.5
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• pp.562-568
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• 2023

We designed a combined nanostructure of inverted pyramidal pits and nanoparticles, which can obtain much stronger field enhancement than traditional periodic pits or nanoparticles. The field enhancement |E|/|E₀| is greater than 10 in a large area at 750-820 nm in incident wavelength. |E_max|/|E₀| is greater than 60. Moreover, the hot spot is obtained outside the pits instead of localized inside them, which is beneficial for experiments such as surface-enhanced Raman scattering. The relations between resonant wavelength and structural parameters are investigated. The resonant wavelength shows a linear dependence on the structure's period, which provides a direct way to tune the resonant wavelength. The excitation of a propagating surface plasmon on the periodic structure's surface, a localized surface plasmon of nanoparticles, and a standing-wave effect contribute to the enhancement.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.203-203
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• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1333-1339
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• 1995

Recently developed technique of measuring minor species concentration by using the modulation dip in broadband CARS has been applied to the flame structure study of methane/air premixed flames in a counterflow. This method used the modulation dip from the cold band CO Q-branch resonant signal superimposed on the nonresonant background. The measured CO concentration profile in a symmetric and unsymmetric methane/air premixed flames together with the velocity and temperature by using LDV and CARS have been compared with the numerical results adopting detailed chemistry modeling. The results show that there is a satisfactory agreement between the experimental data and numerical results for velocities, temperatures and CO concentrations. And the modulation dip technique of measuring minor species, such as CO is a viable tool for a quantitative measurement in a flame.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.