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Symmetry of GaAsN Conduction-band Minimum: Resonant Raman Scattering Study  

Seong M.J. (Department of Physics, Chung-Ang University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.2, 2006 , pp. 162-167 More about this Journal
Abstract
The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.
Keywords
GaAsN; Conduction-band minimum symmetry; Resonant raman scattering; Zone-boundary phonon;
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