• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.5-5
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• 2011

Raman spectroscopy has become one of the most widely used tools in graphene research. The resonant Raman scattering process that gives rise to the observed strong Raman signal carries information regarding the electronic structure as well as the structural properties. When polarization of the incident excitation laser light or the scattered signal is carefully controlled, more information on the electronic and structural properties becomes available. In this tutorial, the basics of polarized Raman scattering experiments will be introduced first. Then several examples from real research will be highlighted to illustrate the application of polarized Raman spectroscopy in graphene research.

• 한국광학회지
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• 제6권4호
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• pp.337-344
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• 1995

Q 스위칭 Nd:YAG 레이저 빔을 펌프광으로 하여 $35~62{\mu}m$ 크기의 물방울에서의 공명 유도라만산란 신호를 검출하였다. 신호광은 간격이 일정한 peak들의 형태로 나타났고 방울크기가 커질수록 그 간격이 좁아짐을 관측하였다. 또한 두 물방울을 결합하면서 유도라만산란 신호를 검출한 결과 결합된 물방울이 거의 구의 형태가 될 때 신호광이 공명 특성을 띠게 됨을 확인하였다. 실험으로 측정한 같은 모드순서의 공명모드 사이의 간격오차는 약 5%였다.

• 한국진공학회지
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• 제15권2호
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• pp.162-167
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• 2006

[ $GaAs_{1-x}N_{x}$ ]의 전도띠 바닥전자상태의 특성을 Ge 기판위에 성장시킨 $GaAs_{1-x}N_{x}(x{\leq}0.7)$ 박막에 대한 공명라만산란 실험을 수행함으로써 조사하였다. LO(longitudinal optical)-phonon 라만세기의 강한 공명상승이 $E_+$ 뿐만 아니라 $E_0$ 전이에너지 근처에서 관측되었다. 그러나 $E_+$ 전이에너지 아래와 근처에서 관측되는 분명한 LO-phonon 선폭 공명상승과 다양한 X와 L 영역경계 (zone-boundary) phonon의 활성화와는 대조적으로, $E_0$ 전이에너지 근처에서는 어떠한 LO-phonon 선폭 확장공명이나 날카로운 영역경계 phonon의 활성화가 관측되지 않았다. 관찰된 공명라만산란 결과는 GaAsN의 전도띠 바닥전자상태가 비국소화된 bulk GaAs와 거의 흡사한 ${\Gamma}$대칭 상태로 구성되었다는 사실을 의미한다.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.425-426
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• 2008

• Current Optics and Photonics
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• 제7권5호
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• pp.562-568
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• 2023

We designed a combined nanostructure of inverted pyramidal pits and nanoparticles, which can obtain much stronger field enhancement than traditional periodic pits or nanoparticles. The field enhancement |E|/|E₀| is greater than 10 in a large area at 750-820 nm in incident wavelength. |E_max|/|E₀| is greater than 60. Moreover, the hot spot is obtained outside the pits instead of localized inside them, which is beneficial for experiments such as surface-enhanced Raman scattering. The relations between resonant wavelength and structural parameters are investigated. The resonant wavelength shows a linear dependence on the structure's period, which provides a direct way to tune the resonant wavelength. The excitation of a propagating surface plasmon on the periodic structure's surface, a localized surface plasmon of nanoparticles, and a standing-wave effect contribute to the enhancement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.203-203
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• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• 대한기계학회논문집
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• 제19권5호
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• pp.1333-1339
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• 1995

Recently developed technique of measuring minor species concentration by using the modulation dip in broadband CARS has been applied to the flame structure study of methane/air premixed flames in a counterflow. This method used the modulation dip from the cold band CO Q-branch resonant signal superimposed on the nonresonant background. The measured CO concentration profile in a symmetric and unsymmetric methane/air premixed flames together with the velocity and temperature by using LDV and CARS have been compared with the numerical results adopting detailed chemistry modeling. The results show that there is a satisfactory agreement between the experimental data and numerical results for velocities, temperatures and CO concentrations. And the modulation dip technique of measuring minor species, such as CO is a viable tool for a quantitative measurement in a flame.

• Transactions on Electrical and Electronic Materials
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• 제2권2호
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.