• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.80-84
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• 2008

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.31-35
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• 2011

A Hybrid Fault Current Limiter(FCL) which has more advantages in fast response and thermal characteristics than a simple resistive FCL had been proposed by our group. The Hybrid FCL consists of a resistive FCL for the magnitude of the first peak of fault current, and a fast switch for detecting fault current and generating the repulsive force within a cycle in fault situation. In ideal case, the impedance of the fast switch wound with two other kinds of HTS tape is negligibly zero in normal operation. But, during the fault situation, each HTS tape has different quench characteristics because of asymmetric current distribution. And this phenomenon causes effective flux and this flux opens the switch through the repulsive force applied to a metal plate of the fast switch. The magnitude of the repulsive force affects the switching characteristics of the fast switch. It should be large enough to raise the metal plate up. Otherwise the arc re-out break which are caused by not enough repulsive force to raise the metal plate up can cause unintended operation of the fast switch. In this paper, the numerical calculation of the repulsive force applied to the metal plate of the fast switch in various combinations of HTS tapes was performed by using the short-circuit test and finite element method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.529-532
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• 2003

Quench behavior of resistive superconducting fault current limiters (SFCLs) with various pattern shapes was investigated. The pattern shapes employed were meander, bi-spiral, and spiral shapes of identical line width, gap and margin. SFCLs were fabricated from YBCO thin films grown on two-inch diameter $Al_2O_3$ substrates under the same conditions. Resistance rise of current limiting elements was low at a spiral shape before the whole quench completion, which may act as a disadvantage for simultaneous quench in serial connection between current limiting elements, but the temperature tended to have similar values at higher voltages. On the other hand, bi-spiral shape was severe at insulation level between current limiting lines. When these aspects were considered, we concluded that a meander shape was appropriate to design for a resistive SFCL based on thin films except the concentration of electric field at edge areas of strip lines.

• Progress in Superconductivity and Cryogenics
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• v.17 no.1
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• pp.10-13
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• 2015

High-temperature superconducting coated conductors (HTS-CCs) are good candidates for resistive superconducting fault current limiter (RSFCL) applications. However, the high current density they can carry and their low thermal diffusivity expose them to the risk of thermal instability. In order to find the best compromise between stability and cost, it is important to study the heat transfer between HTS-CCs and the liquid nitrogen ($LN_2$) bath. This paper presents an experimental method to monitor in real-time the temperature of a quenched HTS-CC during a current pulse. The current and the associated voltage are measured, giving a precise knowledge of the amount of energy dissipated in the tape. These values are compared with an adiabatic numerical thermal model which takes into account heat capacity temperature dependence of the stabilizer and substrate. The result is a precise estimation of the heat transfer to the liquid nitrogen bath at each time step. Measurements were taken on a bare tape and have been repeated using increasing $Kapton^{(R)}$ insulation layers. The different heat exchange regimes can be clearly identified. This experimental method enables us to characterize the recooling process after a quench. Finally, suggestions are done to reduce the temperature increase of the tape, at a rated current and given limitation time, using different thermal insulation thicknesses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.243-244
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• 2006

As an preliminary study for the quench protection of high temperature superconducting (HTS) cable using superconducting fault current limiter (SFCL), experimental research was carried out. The test circuit was composed of Bi-2223/Ag HTS tape and a SFCL made of YBCO thin films. In the normal state, the applied current of 56 A, which was critical current of HTS tape, could be flown through the circuit without resistive loss. Increasing the currents, the quench development of both materials was investigated from the voltage signal acquired from the resistance of the quenched superconductor. Up to around 10 times of the critical current was applied to the HTS tape and the current limiting characteristics of SFCL were investigated. In addition, for the finding out the optimal operating condition of SFCL such as the numbers of elements, a shunt resistor was applied to the SFCL and quench characteristics were analyzed as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• ETRI Journal
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• v.27 no.2
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• pp.239-242
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• 2005

This paper introduces two different current differencing buffered amplifier (CDBA)-based synthetic floating inductance circuits. Both configurations use a grounded capacitor. They are fully integrable and provide the advantages of electronic tuning.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1001-1007
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• 1996

The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.73-76
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• 1999

We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of $I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method.