• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1518-1519
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• 2007

본 논문에서는 두 개의 무한도체 평판에 폭이 좁은 개구가 존재할 때, 개구를 통해서 침투하는 침투전자파의 크기를 두 무한도체 평판사이에 여러 가지 특성을 가지는 손실판을 장하하여 개구면 전계분포를 제어하여 침투 전자파의 크기를 저감시키는 방법을 제안하고 있다. 개구면에 평면파가 입사할 때, 손실판에 의해 개구면 전계분포가 제어된다. 두 개의 무판도체 평판 사이에 손실판을 장하하면 개구면의 전계분포 및 침투전자파가 효과적으로 제어됨을 확인하고 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.24-26
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• 2001

The high temperature super-conductor transformer gains interests from the industries. This paper described construction and test results of a 10kVA HTS transformer. Three phase transformer with double pancake windings were constructed. BSCCO-2223 wire, silicon sheet steel core and FRP cryostats were used in that transformer After the test of basic properties of the 3 phase HTS transformer using no load test, short ciucuit test and full load test, continuous operation of 100 hours with pure resistive load has been carried out. Test proved over-load capability and reliability of the HTS transformer.

• 대한원격탐사학회지
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• 제20권1호
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• pp.39-46
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• 2004

The generalized Rayleigh-Gans (GRG) approximation is usually used to compute the scattering amplitudes of leaves smaller or comparable to a wavelength, while the physical optics (PO) approach with the resistive sheet approximation is commonly used for leaves larger or comparable to the wavelength. In this paper, the scattering amplitudes of an elliptical leaf are computed using those theoretical scattering models (GRG and PO) at different frequencies. The accuracies of the analytical models for microwave scattering from deciduous leaves are investigated by comparison with the precise estimation by the method of moment (MoM). It was found that both the PO approach and the GRG approximation can be used alternatively for computing the scattering matrices of natural deciduous leaves at P-, L-, C- and X-band frequencies.

• 재활치료과학
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• 제11권4호
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• pp.55-68
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• 2022

서론 : 본 연구는 연하장애 환자의 혀 운동 및 측정 도구들에 대한 고찰을 통해 도구의 원리와 특징을 확인하여 임상 적용을 위한 정보를 제공하고자 하였다. 본론 : 연하재활 분야에서 혀 운동 및 측정 도구로 활용되고 있는 15개의 도구를 확인하였고, 원리에 따라 벌브 센서 원리, 저항 센서 시트 원리, 마우스피스형 센서, 기타 기술의 도구로 분류하였다. 벌브 센서는 IOPI, KSA, TPM-01이 있었으며, 사용방법이 다소 간편하지만 혀의 압력 측정 시 위치 고정에 대한 제한점이 있었다. 저항 센서 시트는 I-SCAN, KEI, IPMD, PRESLA가 있었고, 모두 입천장에 고정이 가능하여 벌브 센서 원리에 비해 안정적인 위치에서 혀 압력 측정이 가능하다. 하지만 제작과정이 복잡하고, 많은 비용이 소모된다는 단점이 있었다. 마우스피스형 원리는 MOST, T-Station, SwallowSTRONG, LFDS가 있었으며, 도구의 특성상 개인의 구강에 맞게 제작되어 혀 압력 측정 시 고정이 가능하고, 안정적인 측정이 가능하다. 하지만 제작 과정에서 많은 비용이 발생하며, 세밀한 움직임의 측정과 내구성에 제한점이 있었다. 기타 도구로는 OPG, TTS, OroPress, TPWA가 있으며, 빛 감지의 원리와 무선 측정이 가능하다는 장점이 있다. 하지만 신뢰도와 타당도가 입증되지 않아 추후 연구가 필요한 실정이다. 결론 : 본 연구는 1990년대부터 현재까지 개발된 혀 운동 및 측정 도구들의 분석을 통해 연하재활 분야에서 활용할 수 있는 정보를 제시하였다. 이에 임상에서 도구의 선택 과정에 도움이 될 것으로 판단된다. 향후에는 기존 도구들의 장단점들을 고려하여 임상뿐만 아니라 가정에서도 활용 가능한 혀 운동 및 측정 도구 개발이 필요하다.

• 한국산학기술학회논문지
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• 제9권2호
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• pp.303-310
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• 2008

ICP-CVD(inductively-coupled Plasma chemical vapor deposition)를 사용하여 $250^{\circ}C$기판온도에서 140 nm 두께의 수소화된 비정질 실리콘(${\alpha}$-Si:H)을 제조하였다. 그 위에 30 nm-Ni을 열증착기를 이용하여 성막하고, $200{\sim}500^{\circ}C$ 사이에서 $50^{\circ}C$간격으로 30분간 진공열처리하여 실리사이드화 처리하였다. 완성된 실리사이드의 처리온도에 따른 실리사이드의 면저항값 변화, 미세구조, 상 분석, 표면조도 변화를 각각 사점면저항측정기, HRXRD(high resolution X-ray diffraction), FE-SEM(field emission scanning electron microscope), TEM(transmission electron microscope), SPM(scanning probe microscope)을 활용하여 확인하였다. $300^{\circ}C$에는 고저항상인 $Ni_3Si$, $400^{\circ}C$에서는 중저항상인 $Ni_2Si$, $450^{\circ}C$이상에서 저저항의 나노급 두께의 균일한 NiSi를 확인되었다. SPM결과에서 저저항 상인 NiSi는 $450^{\circ}C$에서 RMS(root mean square) 표면조도 값도 12 nm이하로 전체 공정온도를 $450^{\circ}C$까지 낮추어 유리와 폴리머기판 등 저온기판에 대응하는 저온 니켈모노실리사이드 공정이 가능하였다.

• 한국표면공학회지
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• 제42권1호
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• International Journal of Aeronautical and Space Sciences
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• 제18권2호
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• pp.215-221
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• 2017

An electromagnetic (EM) wave absorber reduces the possibility of radar detection by minimizing the radar cross section (RCS) of structures. In this study, a radar absorbing structure (RAS) was applied to the leading edge of a blended wing body aircraft to reduce RCS in X-band (8.2~12.4GHz) radar. The RAS was composed of a periodic pattern resistive sheet with conductive lossy material and glass-fiber/epoxy composite as a spacer. The applied RAS is a multifunctional composite structure which has both electromagnetic (EM) wave absorbing ability and load-bearing ability. A two dimensional unit absorber was designed first in a flat-plate shape, and then the fabricated leading edge structure incorporating the above RAS was investigated, using simulated and free-space measured reflection loss data from the flat-plate absorber. The leading edge was implemented on the aircraft, and its RCS was measured with respect to various azimuth angles in both polarizations (VV and HH). The RCS reduction effect of the RAS was evaluated in comparison with a leading edge of carbon fabric reinforced plastics (CFRP). The designed leading edge structure was examined through static structural analysis for various aircraft load cases to check structural integrity in terms of margin of safety. The mechanical and structural characteristics of CFRP, RAS and CFRP with RAM structures were also discussed in terms of their weight.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권3호
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• pp.101-106
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• 2003

The high temperature superconductor transformers gain interests from the industries. This paper described construction and test results of 10㎸A HTS transformer Three phase transformer with double pancake windings were constructed. To reduce the leakage magnetic field, secondary coil were placed between the two primary coils. BSCCO-2223 wire. silicon sheet steel core and FRP cryostats were used to construct the transformer. Three coils were stacked in one cryostat. Two double pancake coils were connected in series for the primary coil and one double pancake coil was used for the secondary coil. Total number of turns of the primary winding and the secondary winding were 112turns and 98urns, respectively, The rated voltages of each winding were 440/220V. The rated currents of each winding were 13.1/26.2A. After the tests of basic properties of the three phase HTS transformer using no-load test, short-circuit test and full-load test, continuous operation of 100 hours with pure resistive load has been carried out. Test results proved over-load capability and reliability of the HTS transformer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.431-434
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• 1998

Platinum-Cobalt alloy thin films were deposited on Al$_2$O$_3$ substrate by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the Al$_2$O$_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : 4.4 W/$\textrm{cm}^2$, Co : 6.91 W/$\textrm{cm}^2$, working vacuum on and annealing conditions of 1000 $^{\circ}C$ and 60 min, the resistivity and the sheet resistive thin films were 15 ${\mu}$$\Omega$$.$cm and 0.5 $\Omega$/$\square$, respectively. The TCR value of Pt-Co a films was measured with various thickness of thin films and annealing temperature. T TCR value is gained under condition 3000${\AA}$ of thin films thickness and 1000$^{\circ}C$ of temperature. These results indicate that Pt-Co alloy thin films have potentiality for the wide temperature ranges.