• Journal of electromagnetic engineering and science
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• v.19 no.2
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• pp.71-81
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• 2019

This paper presents a design methodology for wideband single-layered microwave absorbers with arbitrary absorption at the design center frequency using reactive Salisbury screens. The bandwidth of the absorber increases when the flatness of the reflection response at the design center frequency is maximized. Based on this observation, closed-form design formulas for wideband absorbers are derived. As they are scalable to any design frequency, wideband reactive screens can be systematically realized using two-dimensional periodic crossed-dipole structures patterned on a resistive sheet. Based on this method, a single-layered absorber with a 90% bandwidth improved to 124% of the design center frequency is presented. For the purpose of physical demonstration, an absorber with a design center frequency of 10 GHz is designed and fabricated using a silver nanowire resistive film with a surface resistance of 30 Ω/square. The measured absorption shows a good agreement with both the calculation and the electromagnetic simulation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.51-54
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• 2007

The purpose of this paper is the development of measurement algorithm for green-sheet based on the digital image processing technique. The Low Temperature Cofired Ceramic (LTCC) technology can be defined as a way to produce multilayer circuits with the help of single tapes, which are used to apply conductive, dielectric and / or resistive pastes on. These single green-sheets have to be laminated together and fired in one step all. Main functionality of the green-sheet film measurement algorithm is to measure the position and size of the punching hole in each single layer. The line scan camera coupled with motorized X-Y stage is used for developing the algorithm. In order to measure the entire film area using several scanning steps, the overlapping method is used. In the process of development of the algorithm based on the image processing and analysis, strong background technology and know-how have been accumulated.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.33-36
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• 2015

It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Proceedings of the KSRS Conference
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• 2000.04a
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• pp.137-142
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• 2000

본 논문에서는 풀밭으로 덮힌 지역의 초고주파 대역 편파별 후방 산란을 분석하는데 있어서 Radiative Transfer 이론의 첫 번째 해를 이용하였다. 풀밭지역에서의 잎은 사각형 형태의 resistive sheet 으로 모델화 시키고, 잎의 크기와 방향성은 불규칙적으로 흩어져 있다고 가정하였다. 땅에서의 흙의 수분 함유량과 표면 거칠기도 고려하였다. 이러한 지역에서의 후방 산란 계수는 풀밭 지역과 레이더 요소들에 따라 각각 다른 계산 결과를 나타낸다. 측정은 15 GHz 대역의 레이더 시스템을 사용하여 풀 층에서의 산란 계수를 측정하고 풀 층에서의 산란 모델을 이용하여 계산 결과와 측정값을 비교하였고 이 모델을 이용하여 Visual-Basic을 이용한 사용자 프로그램인 TSM(Total Scattering Model)을 제작하였다.

• Composites Research
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• v.27 no.6
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• pp.225-230
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• 2014

In this study, a novel microwave absorber which consists of a structural part, a resistive sheet, and a low dielectric layer is proposed. Unlike the conventional Salisbury screen, a newly proposed absorber is capable of a range of absorbing performance, from narrowband to broadband. In the case of the narrowband absorber, the fabricated absorber with optimized design parameters has a strong resonance at 9.25 GHz and reflection loss of -44 dB with satisfying the -10 dB absorption in whole X-band (8.2 GHz~12.4 GHz). For the broadband absorber design, the reflectivity was minimized in the considered frequency ranges. The designed absorber showed two weak resonances near 6.5 GHz and 16.5 GHz and satisfied the -10 dB absorption from C-band to Ku-band (4 GHz~18 GHz). The measured reflection loss of fabricated absorber was well matched with simulation results, though the measurement was only performed on X-band. For the Salisbury screen to be capable of broadband absorption, it should be stacked multiply in a structure known as the Jaumann absorber. However, for the microwave absorber presented here, broadband as well as narrowband capabilities can be implemented without a change of the structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.763-772
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• 2000

The Radiative Transfer Model(RTM) for computation of microwave polarimetric backscattering coefficients of a various types of vegitation canopies has been examined in this paper. Leaves in the vegitation canopy are modeled by rectangular resistive sheets, which sizes and orientations are randomly distributed. Surface roughness and soil moisture of soil surface are considered in this computation. The backscattering coefficients of grasslands are computed for various values of radar parameters and canopy parameters. A polarimetric scatterometer radar system at 15 GHz has been used for measurement of the scattering coefficient from a grass canopy and a cabbage canopy. The computation results obtained by the RTM for the canopies are compared with the measurement for examination of the RTM.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.41-47
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• 1999

Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.187-187
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• 2015

The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.371-374
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• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.