• 제목/요약/키워드: Resistance-capacitance

검색결과 459건 처리시간 0.033초

Impedance를 이용한 전도성고분자 센서의 에탄올 가스 감응특성 (Ethanol Gas Sensing Characteristics of Conducting Polymer Sensor Using Impedance)

  • 이경문;유준부;전희권;이병수;이덕동;허증수
    • 한국재료학회지
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    • 제13권3호
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    • pp.155-159
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    • 2003
  • The polypyrrole and polyaniline thin film sensors which were made by chemical polymerization were employed to detect ethanol gas. With a single sensor element we can obtain characteristic patterns of behaviour across a very wide frequency range when measuring either resistance or capacitance. Impedance spectroscopy was employed to study the gas sensing behavior of both capacitance and resistance based sensors with conducting polymer as the active sensing element.

Penicillin-G 첨가 배지에서 배양한 코리네형 세균의 전기장 충격법에 의한 고효율 형질전환 (High Frequency Electroporation-transformation of Coryneform Bacteria Grown in the Medium with Penicillin-G)

  • 노갑수;김성준
    • KSBB Journal
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    • 제6권3호
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    • pp.223-230
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    • 1991
  • Using the shuttle vector pECCGl between Escherichia coli and Corynebacterium glutamicum and C. glutamicum strain JS231 grown in the medium supplemented with penicillin-G, which inhibits the formation of cross-links in the peptidoglycan of bacterial cell wall, various parameters involved in electroporation system including resistance, electric field strength, capacitance, DNA concentration, and cell density were investigated independently and optimized for the high efficiency transformation of coryneform bacteria. Using cells grown with 0.3U/ml of penicillin-G and harvested at A600 of 0.7-0.8, transformation efficiencies of 107-l08 transformants/$\mu\textrm{g}$ of DNA with Corynebcctertum glutamicum strain JS231 and wild type ATCC13032 were achieved under conditions of 12.5kV/cm of electric field strength, 400 ohms of resistance, $25\mu$F of capacitance, 3$\times$108 cells per transformation(1.2$\times$1010 cells/ml) and 100ng of plasmid DNA per transformation.

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대기압 플라즈마 처리에 의한 액체 시료의 전기적 특성 변화 연구

  • 노준형;김윤중;김원영;현성보;박진영;어윤;이용민;조광섭;권기청
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.528-528
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    • 2013
  • 대기압 플라즈마 처리에 의한 특성 파악은 플라즈마 처리한 표면의 친수성 또는 소수성의 물성변화를 결합각을 측정하거나 Atomic Force Microscopy (AFM)을 통한 표면 구조의 분석등 고체 표면을 평가하는 방법이 현재 주로 사용되고 있다. 그러나 결합각이나 AFM을 통한 평가법은 고체 표면만을 확인 할 수 있으며 액체 시료의 물성 상태 변화에 따라 정량적 분석을 확인할 수 없다. 이에 액체 시료에 대기압 플라즈마 처리로 미치는 영향을 전기적 특성 평가를 통해 정량적으로 분석하였다. 증류수, 알코올 등 액체 시료로 실험을 진행하였다. 준비된 기판위에 액체시료를 올려 플라즈마 처리를 하였으며, 기판에 양단에 준비된 전극을 통해 Resistance, Capacitance, Inductance 등의 임피던스를 측정하여 액체시료에 인가 된 플라즈마 처리 전과 후의 전기적 특성 변화를 확인하였다.

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전기이중층 캐패시터의 특성에 미치는 혼성 도전재의 영향 (Effect of Conducting Composite on Characteristics of Electric Double Layer Capacitor)

  • 김익준;이선영;도칠훈;문성인;최성옥;손영모;김경호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1140-1143
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    • 2002
  • This work describes the effect of conducting composite on the characteristics of electric double layer capacitor. The cell, which was fabricated with conducting composite consisted of 50 wt.% of SPB and 50 wt.% of VGCF, exhibits the higher specific capacitance, the lower resistance and the better rate capability than those of the cells fabricated with each single electronic conductor. These enhanced properties could be related with the dense structure of electrode.

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Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge

  • Kim, Hogyoung;Kim, Min Kyung;Kim, Yeon Jin
    • 한국재료학회지
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    • 제26권10호
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    • pp.556-560
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    • 2016
  • Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

외부부하가 $I^2L-Inverter$의 기능에 미치는 영향 (The Influence of the External Loads on the $I^2L-Inverter$ Function)

  • 이규영;황호정
    • 대한전자공학회논문지
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    • 제22권2호
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    • pp.75-81
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    • 1985
  • 저전류 범위에서 l2L은 연결되는 소자의 input capacitance, resistance 및 그 소자동작에 필요한 전류들에 의해 출력단의 신호가 손상을 입게 되어 logic기능이 방해를 받게 되며 그로 인한 회로의 불확실성이 증가될 수 있다. 본 논문은 이와같은 외부부하와 연결된 I2L-inverter의 기능에 관한 해석을 다루고 rise time과 fall time의 변화에 관한 simulation 및 실험을 통한 측정결과를 비교 분석하였다.

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0.5 mol% Pb5Ge3O11가 첨가된 반도성 (Ba1-xPbx)TiO3 세라믹스의 PTCR 효과 (PTCR Effects of Semiconducting (Ba1-xPbx)TiO3 Ceramics with 0.5 mol% Pb5Ge3O11)

  • 윤상옥;정형진;윤기현
    • 한국세라믹학회지
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    • 제28권7호
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    • pp.525-530
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    • 1991
  • The effects of 0.15mol% Y2O3 doped semiconducting (Ba1-xPbx)TiO3 ceramics with 0.5 mol% Pb5Ge3O11 as sintering additives have been investigated as function of Pb contents (from 0.05 mol to 0.3 mol) and sintering temperatures (from 1050$^{\circ}C$ to 1200$^{\circ}C$). As the Pb content increases in the (Ba1-xPbx)TiO3 system, the size and resistance of the grain increase but the capacitance of the grain boundary decreases due to the formation of liquid phase during the sintering. And with increasing the sintering temperatures, the resistance of the grain decreases but the capacitance of the grain boundary increases. The PTCR effects decrease with increasing the Pb content and the sintering temperature.

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External Electrode Fluorescent Lamp Model Based on the Equivalent Resistance and Capacitance Variation

  • Cho, Kyu-Min;Oh, Won-Sik;Moon, Gun-Woo;Park, Mun-Soo;Lee, Sang-Gil;Kim, Min-Gyu
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1263-1266
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    • 2006
  • A circuit model simulating the electrical characteristics of EEFL(External Electrode Fluorescent Lamp) is proposed. The model is based on linear approximation that represents the equivalent resistance and capacitance as a function of power. Simulation waveforms and experimental results are presented to verify feasibility of the equivalent model.

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Large-Signal Output Equivalent Circuit Modeling for RF MOSFET IC Simulation

  • Hong, Seoyoung;Lee, Seonghearn
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권5호
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    • pp.485-489
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    • 2015
  • An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.

등가 저항과 등가 커패시터 변화에 바탕을 둔 외부전극 형광램프의 등가모델 연구 (A Study on Equivalent Model of EEFL Based on the Equivalent Resistance and Capacitance Variation)

  • 조규민;오원식;문건우;박문수;이상길
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2006년도 전력전자학술대회 논문집
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    • pp.59-61
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    • 2006
  • A circuit model simulating the electrical characteristics of EEFL(External Electrode Fluorescent Lamp) is proposed. The model is based on linear approximation that represents the equivalent resistance and capacitance as a function of power. Simulation waveforms and experimental results are presented to verify feasibility of the equivalent model.

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