• 대한전자공학회논문지SD
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• 제46권2호
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• pp.71-77
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• 2009

본 논문에서는 다중 전하펌프를 이용하여 빠른 위상고정 시간을 갖는 새로운 위상고정루프를 제안하였다. 제안된 위상고정 루프는 세 개의 전하펌프를 사용하여 루프필터의 실효 커패시턴스와 저항을 위상고정 상태에 따라 각 전하펌프의 전류량 크기와 방향 제어를 통해 증감시킬 수 있다. 위상고정루프의 위상고정 상태에 따라 루프 대역폭을 제어하여 빠른 위상고정 시간을 갖는 위상고정루프를 설계하였다. 또한 전체 칩 영역의 많은 부분을 차지하는 커패시터의 크기를 제안된 구조로 최소화하였다. 저항과 커패시터를 모두 포함한 29.9KHz의 대역폭의 위상고정루프를 $990{\mu}m\;{\times}\;670{\mu}m$ 크기로 설계하였다. 제안된 위상고정 루프는 3.3V $0.35{\mu}m$ CMOS 공정을 이용하여 제작되었다. 851.2MHz 출력 주파수에서 측정된 위상 잡음은 -90.45 dBc/Hz@1MHz이며, 위상고정시간은 $6{\mu}s$ 보다 작은 값을 가진다.

• 전자공학회논문지A
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• 제32A권6호
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• pp.82-90
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• 1995

We proposed SAW (Self-Algined Selectively Grown W-Gate) MOSFET structure, and strudied electrical characteristics of the fabricated SAW MOSFETs. The threshold volgate of 0.21${\mu}$m SAW NMOSFET was 0.18 V and that of 0.24 ${\mu}$m SAW PMOSFET was -0.16 V. The subthreshold slope was 74 mV/decade for NMOSFET and 82 mV/decade for PMOSFET. The maximum transconductance of NMOSFET and PMOSFET, at V$_{GS}$=2.5 V and V$_{DS}$=1.5 V, were260 mS/mm and 122 mS/mm. The measured saturation drain current at V$_{GS}$=V$_{DS}$ =2.5 V was 0.574 mA/${\mu}$m for NMOSFET and -0.228 mA/${\mu}$m for PMOSFET. The gate resistance of SAW MOSFET was about m$\Omega$cm and the n+-p junction capacitance of SAW MOSFET was about 10% lowas than that of the conventional MOSFET's.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

• 한국수소및신에너지학회논문집
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• 제20권1호
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• pp.38-44
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• 2009

Recently, the research focused on fuel cell hybrid vehicles (FCHVs) is becoming an attractive solution due to environmental pollution generated by fossil fuel vehicles. The proper energy control strategy will result in extending the fuel cell lifetime, increasing of energy efficiency and an improvement of vehicle performance. Battery state of charge (SoC) is an important quantity and the estimation of the SoC is also the basis of the energy control strategy for hybrid electric vehicles. Estimating the battery's SoC is complicated by the fact that the SoC depends on many factors such as temperature, battery capacitance and internal resistance. In this paper, battery charging time estimated by SoC is studied by using the speed response and current response. Hybrid system is consist of a fuel cell unit and a battery in series connection. For experiment, speed response of vehicle and current response of battery were determined under different state of charge. As the results, the optimal battery charging time can be estimated. Current response time was faster than RPM response time at low speed and vice versa at high speed.

• Journal of Microbiology and Biotechnology
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• 제9권5호
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• pp.687-690
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• 1999

Bacillus stearothermophilus No. 236 isolated from the soil is a strong xylan degrader producing all the xylanolytic enzymes. However, the strain was discovered to be highly intractable to its transformation. In the present study, we have developed a reliable method for transformation of B. stearothermophilus No. 236 by a systematic examination of several factors which might have an influence on the efficiency of electrotransformation. Notably, we found that the most critical factor influencing the transformation efficiency (TE) was the incubation temperature after pulsing, with its optimum incubation of $37^{\circ}C.\; At\; 50^{\circ}C$, the optimum growth temperature of the B. stearothermophilus strain, the transformants could not be obtained at a recognizable level. The combination of field strength of 7.5 kV/cm along with pulse duration of 10 msec (resistance of $400{\Omega}\; and\; capacitance\; of\; 25{\mu}F$) was shown to be the best electrical parameters at the incubation temperature of $37^{\circ}$. A higher TE was obtained when the cells were harvested at an early-exponential phase. Twenty percent of PEG-8000 in a suspension buffer and an addition of 0.1% glycine in the growth medium resulted in about 4-fold and 3-fold increases in TE, respectively. We also found that the plasmid DNA which had been cycled through the host B. stearothermophilus cells enhanced TE by one order of magnitude higher. Under the presently described conditions, $2.5{\times}10^{5} transformants per ${\mu}g$ DNA was attained.

• 한국재료학회지
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• 제21권8호
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• pp.468-475
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• 2011

[ $LaMeO_3$ ](Me = Cr, Co) powders were prepared using the polymeric precursor method. The effects of the chelating agent and the polymeric additive on the synthesis of the $LaMeO_3$ perovskite were studied. The samples were synthesized using ethylene glycol (EG) as the solvent, acetyl acetone (AcAc) as the chelating agent, and polyvinylpyrrolidone (PVP) as the polymer additive. The thermal decomposition behavior of the precursor powder was characterized using a thermal analysis (TG-DTA). The crystallization and particle sizes of the $LaMeO_3$ powders were investigated via powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and particle size analyzer, respectively. The as-prepared precursor primarily has $LaMeO_3$ at the optimum condition, i.e. for a molar ratio of both metal-source (a : a) : EG (80a : 80a) : AcAc (8a) inclusive of 1 wt% PVP. When the as-prepared precursor was calcined at $700^{\circ}C$, only a single phase was observed to correspond with the orthorhombic structure of $LaCrO_3$ and the rhombohedral structure of $LaCoO_3$. A solid-electrolyte impedance-metric sensor device composed of $Li_{1.5}Al_{0.5}Ti_{1.5}(PO_4)_3$ as a transducer and $LaMeO_3$ as a receptor has been systematically investigated for the detection of NOx in the range of 20 to 250 ppm at $400^{\circ}C$. The sensor responses were able to divide the component between resistance and capacitance. The impedance-metric sensor for the NO showed higher sensitivity compared with $NO_2$. The responses of the impedance-metric sensor device showed dependence on each value of the NOx concentration.

• Korean Chemical Engineering Research
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• 제49권1호
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• pp.10-14
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• 2011

철 이온 교환방법에 의해 메조기공을 갖는 활성탄소 섬유(ACF)를 제조하고, 이를 사용하여 전기 이중층 커패시터(EDLC)의 전극소재 성능을 조사하였다. 질산처리에 의해 제조된 메조기공 ACF는 비표면적이 1,249, 664 $m^2/g$이고, 메조 기공 분율이 70.6-81.3%이고, 평균 기공크기는 약 2.78~4.14 nm이다. 질산처리시간이 짧을수록 비표면적이 크고 메조 기공이 적게 발달됨을 알 수 있었다. 전기이중층 커패시터의 성능을 조사하기 위해서, 메조기공 ACF, 도전제, 바인더를 사용하여 단위 셀을 제조하였으며, 유기 전해질을 사용하였다. 2시간 질산으로 처리된 ACF의 비 축전양은 0.47 $F/cm^2$이고, 20회 충.방전 테스트에서 안정된 실험결과를 얻을 수 있었다. EDLC의 전기화학적 성능은 ACF 전극의 비표면적에 크게 영향을 받으며 메조기공은 전하의 확산저항을 감소시키는 것을 알 수 있었다.

• 공업화학
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• 제4권2호
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• pp.373-380
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• 1993

알칼리형 연료전지의 수소극 촉매로 사용되는 Raney 니켈의 제조방법과 조촉매 첨가에 따른 전극특성을 전기화학적 방법을 통하여 고찰하였다. Raney 니켈은 소결온도를 $700^{\circ}C$로 하고 니켈 대 알루미늄의 함량비를 중량비 60:40으로 하여 제조한 것이 전극성능이 우수하였다. 조촉매로 티타늄을 첨가하면 촉매활성과 전극특성이 증가함을 알았으며 특히 2w/o의 티타늄이 첨가된 전극이 2.4A/g의 가장 우수한 질량활성을 갖고 있었고 이때의 촉매의 평균 입자크기는 $5.8{\mu}m$였다. 임피던스법에 의해 전극반응의 거동을 평가하였으며 티타늄이 2w/o 첨가된 전극에서의 저항값과 capacity를 측정한 결과 $0.3{\Omega}cm^2$, $0.42F/cm^2$을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• 한국세라믹학회지
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• 제30권5호
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• pp.397-403
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• 1993

Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10＋[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and ＋85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.