• 제목/요약/키워드: Resistance-capacitance

검색결과 459건 처리시간 0.027초

지락고장에 의해 금속제 유연전선관에 유도된 개폐서지전압의 특성 (Characteristics of the Switching Surge Voltages Induced at Metal Flexible Conduits Due to Ground Faults)

  • 이복희;신건진;박희열;엄상현;김유하
    • 조명전기설비학회논문지
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    • 제27권5호
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    • pp.74-80
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    • 2013
  • This paper presents the transient behavior of the switching surge voltages generated by interruption of DC ground fault currents flowing through metal flexible conduits. All fault circuits consist of line parameters such as resistance, inductance, capacitance and conductance. The use of nonmagnetic metal conduits should be taken into account in order to reduce the inductance of battery charger distribution circuits. The frequency-dependent circuit parameters of metal flexible conduits were measured. The switching surge voltages generated at the ground fault circuit consisted of steel-galvanized alloy and aluminium conduits were investigated. As a result, the impedances of metal flexible conduits are significantly increased over the range of the frequency above 10 kHz and the switching surge voltages generated along aluminium flexible conduit are lower than those along steel-galvanized alloy conduit when DC fault current is interrupted.

대칭적 구조를 가진 주파수 고정 루프 회로의 설계 및 신뢰성 분석 (Design and Reliability Analysis of Frequency Locked Loop Circuit with Symmetric Structure)

  • 최진호
    • 한국정보통신학회논문지
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    • 제18권12호
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    • pp.2933-2938
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    • 2014
  • 전류컨베이어 회로를 이용한 주파수 고정 루프 회로를 $0.35{\mu}m$ CMOS 공정으로 설계하였다. 공급전압은 3volts를 사용하였다. 설계된 회로는 분주기, 주파수-전압 변환기, 전압 감산기 및 발진기로 구성하였으며, 각 회로 블록을 대칭적으로 배치하여 공정 변화에 따른 신뢰성 특성을 향상시켰다. HPICE 시뮬레이션 결과 MOS 트랜지스터의 채널길이, 채널 폭, 저항 및 커패시터의 크기가 ${\pm}5%$ 변화할 때 출력주파수의 변화율은 ${\pm}1%$ 내외였다.

Mixed-mode 시뮬레이션을 이용한 SiC DMOSFETs의 스위칭 특성 분석 (Mixed-mode Simulation of Switching Characteristics of SiC DMOSFETs)

  • 강민석;최창용;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회논문지
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    • 제22권9호
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    • pp.737-740
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    • 2009
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

CNT/PVDF 압전 복합막의 제작과 전기적 특성 (Fabrication of CNT/PVDF Composite Film and Its Electrical Properties)

  • 이선우;정낙천
    • 한국전기전자재료학회논문지
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    • 제26권8호
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    • pp.620-623
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    • 2013
  • The carbon nanotube / poly-vinylidene fluoride (CNT/PVDF) composite films for the nano-generator devices were fabricated by spray coating method using the CNT/PVDF solution, which was prepared by adding PVDF pellets into the CNT dispersed N-Methyl-2-pyrroli-done (NMP) solution. The flexible CNT/PVDF composite films were investigated by the scanning electron microscopy, which revealed that the CNTs were uniformly dispersed in the PVDF matrix and thickness of the films was approximately $20{\mu}m$. Fourier transform infra-red spectra were used to investigate crystal structure of the as-spray-coated CNT/PVDF films, and we found that they revealed extremely large portion of the ${\beta}$ phase PVDF. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the resistance didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Finally, the resulting nano-generator devices revealed reasonable current output after given mechanical stress.

Zigbee통신을 이용한 전력변환기기의 DC Bus 커패시터의 온라인 원격 고장진단 시스템 (On-line Remote Diagnosis System for DC Bus Capacitor of Power Converters Using Zigbee Communication)

  • 정완섭;손진근
    • 전기학회논문지P
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    • 제64권1호
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    • pp.29-34
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    • 2015
  • DC bus electrolytic capacitors are used in variety of equipments as smoothing element of the power converters because it has high capacitance for its size and low price. It is responsible for frequent breakdowns of many static converters and inverter drive systems. Therefore it is important to diagnosis monitoring the condition of an electrolytic capacitor in real-time to predict the failure of power converter. In this paper, the on-line remote diagnosis monitoring system for DC BUS electrolytic capacitors of power converter using low-cost type Zigbee communication modules is developed. To estimate the health status of the capacitor, the equivalent series resistor(ESR) of the component has to be determined. The capacitor ESR is estimated by using RMS computation using AC coupling method of DC link ripple voltage/current. The Zigbee communication-based experimental results show that the proposed remote DC capacitor diagnosis monitoring system can be applied to DC/DC converter and UPS successfully.

임펄스 착자요크의 열전달 모델링 및 특성 해석 (Heat kTransfer Modeling and Characteristics Analysis of Impulsed Magnetizing Fisture)

  • 백수현;김필수
    • 대한전기학회논문지
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    • 제43권3호
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    • pp.381-387
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    • 1994
  • In this paper, we found the improved SPICE heat transfer modeling of impulsed magnetizing fixture system and investigated temperature characteristics using the proposed model. As the detailed thermal characteristics of magnetizing fixture can be obtained, the efficient design of the impulsed magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important of forecast the characteristics of the magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits under different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The purpose of this work is to compute the temperature increasing for different magnetizing conditions. The method uses multi-lumped model with equivalent thermal resistance and thermal capacitance. The reliable results are obtained by using iron core fixture (stator magnet of air cleaner DC motor) coupled to a low-voltage magnetizer(charging voltage : 1000[V], capacitor : 3825[$\mu$F]. The modeling and experimental results are in close aggrement.

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적외선 수신모듈IC용 전치증폭기의 설계 (Preamplier design for IR receiver IC)

  • 홍영욱;류승탁;최배근;김상경;백승호;조규형
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 D
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    • pp.3124-3126
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    • 2000
  • The application of IR(Infrared) communication is very wide and IR receiver has become a standard of home entertainment. A preamplifier with single 5V supply was designed for IR receiver IC. To operate at long distance, receiver IC should have high gain and low noise characteristic. To provide constant output signal magnitude, independent of transciever distance, gain limiting stage is needed. And to cut-off DC noise component effectively, large resistance and capacitance are required. Transimpedance type preamplifier, and diode limiting amplifier, and current limiting amplifier were designed. It is another function of current limiting amplifier that transforms single input signal to differential output signal. Using AMS BiCMOS model, both BJT version and MOS version was designed. Total power consumption is O.lmW, and IC size is $0.3mm^2$

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태양광용 부스트 컨버터의 디지털 제어기 설계 (The Design of Digital Controller for Boost Converter on Photovoltaic System)

  • 임지훈;최주엽;송승호;최익;정승환;안진웅;이동하
    • 한국태양에너지학회 논문집
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    • 제30권6호
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    • pp.22-27
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    • 2010
  • In photovoltaic system, the specifications of solar array is changed as open circuit voltage and short circuit current because of cell temperature and solar radiation. A boost converter of this system connects between output of photovoltaic system and DC link capacitor of grid connected inverter as controlling duty ratio. Therefore to supply stable voltage to the grid, a boost converter is need to keep certain voltage output. Considering the capacitance and the resistance of boost converter, this paper designed proper digital controller.

Electrochemical Capacitors Based on Aligned Carbon Nanotubes Directly Synthesized on Tantalum Substrates

  • Kim, Byung-Woo;Chung, Hae-Geun;Min, Byoung-Koun;Kim, Hong-Gon;Kim, Woong
    • Bulletin of the Korean Chemical Society
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    • 제31권12호
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    • pp.3697-3702
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    • 2010
  • We demonstrate that vertically aligned carbon nanotubes can be synthesized directly on tantalum substrate via water-assisted chemical vapor deposition and evaluate their properties as electrochemical capacitors. The mean diameter of the carbon nanotubes was $7.1{\pm}1.5\;nm$, and 70% of them had double walls. The intensity ratio of G-band to D-band in Raman spectra was as high as 5, indicating good quality of the carbon nanotubes. Owing to the alignment and low equivalent series resistance, the carbon nanotube based supercapacitors showed good rate performance. Rectangular shape of cyclic voltammogram was maintained even at the scan rate of > 1 V/s in 1 M sulfuric acid aqueous solution. Specific capacitance was well-retained (~94%) even when the discharging current density dramatically increased up to 145 A/g. Consequently, specific power as high as 60 kW/kg was obtained from as-grown carbon nanotubes in aqueous solution. Maximum specific energy of ~20 Wh/kg was obtained when carbon nanotubes were electrochemically oxidized and operated in organic solution. Demonstration of direct synthesis of carbon nanotubes on tantalum current collectors and their applications as supercapacitors could be an invaluable basis for fabrication of high performance carbon nanotube supercapacitors.

저 유전 재료의 에칭 공정을 위한 $H_2/N_2$ 가스를 이용한 Capacitively Coupled Plasma 시뮬레이션 (Capacitively Coupled Plasma Simulation for Low-k Materials Etching Process Using $H_2/N_2$ gas)

  • 손채화
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권12호
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    • pp.601-605
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    • 2006
  • The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.