• Journal of Advanced Marine Engineering and Technology
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• 제35권8호
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• pp.1117-1123
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• 2011

비접지 배전방식이 채택되는 선박은 일선지락 상황에서도 정전사고로 이어지지 않으므로 상대적으로 안정적인 급전이 가능하다. 그러나 비접지 계통에서 발생하는 지락고장은 대지 전압을 왜곡시켜 선체에 대한 선로 전압을 상승시키므로 감전사고와 전기화재의 위험이 높아진다. 특히 선로와 선체 간에 작용하는 분포용량은 대지임피던스의 한 요소로서 지락고장 시 대지전압의 왜곡 특성에 큰 영향을 미친다. 이 같은 대지전압의 변화는 3상 대지전압 중성점의 이동에 의해 설명될 수 있다는 점에서 본 연구에서는 대지임피던스를 입력으로 할 때 대지전압을 출력으로 하는 연산모듈을 구성한 후 이를 이용하여 접지저항 변화에 대응하는 대지전압 중성점의 이동 경로 특성을 확인하였다. 또한 다양한 조건에서 나타나는 중성점 이동경로를 구하는 한편 실제 배전계통에서의 측정 결과와 비교함으로써 제시된 분석방법의 적정성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.422-426
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• 2011

Piezoelectric materials can be used to convert mechanical energy into electrical energy. In this study, we investigated the possibility of harvesting from mechanical vibration force using a high efficient piezoelectric material-polyvinylidene fluoride (PVDF). A piezoelectric energy harvesting system consists of rectifier, filter capacitor, resistance. The experiments were carried out with impacting force to PVDF film with the thickness of 1 ${\mu}m$. The output power was measured with change in the load resistance value from 100 ${\Omega}$ to 2.2 $M{\Omega}$. The highest power was obtained under optimization by selection of suitable resistive load and capacitance. A power of 0.3082 ${\mu}W/mm^2$ was generated at the external vibration force of 5 N (10 Hz) across a 1 $M{\Omega}$ optimal resistor. Also, the maximum power of 0.345 ${\mu}W/mm^2$ was generated at 22 ${\mu}F$ and 1 $M{\Omega}$. The developed system was expected at a solution to overcome the critical problem of making up small size energy harvester.

• 전기학회논문지
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• 제66권5호
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• pp.800-805
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• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• 한국통신학회논문지
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• 제39B권7호
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• pp.440-448
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• 2014

TWDM-PON 시스템 수신부에 사용될 $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) 어레이가 $0.13{\mu}m$ CMOS 기술로 구현하였다. TIA의 대역폭 향상을 위하여 인덕터 피킹 기술과 1.2 V 기반의 저전압 설계기술을 제안한다. 0.5 pF PD 용량에서 7 GHz 3 dB 대역폭을 구현한다. 1.2V 공급에서 채널당 31 mW를 소모하는 동안 Trans-resistance gain 은 $71.81dB{\Omega}$이다. TIA의 입력 감도는 -33.62 dBm를 갖는다. 4 채널을 포함하는 전체 칩 크기는 $1.9mm{\times}2.2mm$ 이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.48.2-48.2
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• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• 공업화학
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• 제17권5호
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• pp.539-546
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• 2006

전도성 고분자인 polyethylenedioxythiophene (PEDOT)을 권취형 알루미늄 콘덴서의 고체 전해질 및 음극으로 적용하기 위하여 PEDOT 중합공정 및 절연지 탄화공정 연구를 수행하였다. 단량체로 ethylenedioxythiophene (EDOT), 산화제로 ferric-p-toluenesulfonate를 사용하였다. 권취된 미세 다공성 알루미늄 에칭박 피트 내부에 균일한 PEDOT 전해질 층을 생성하기 위하여 콘덴서 소자를 열처리하여 탄화함으로써 절연지의 섬유조직을 조절하고 이를 통해 중합액의 절연지 집중현상을 억제하여 에칭 피트 내부로의 중합액 함침이 용이하도록 하였다. 탄화온도, 탄화시간에 따라 콘덴서의 용량, 손실, 등가직렬저항, 내열특성이 좌우되었다. 절연지의 두께, 밀도는 탄화공정의 중요한 변수이며 이들 변수에 따라 콘덴서의 특성이 영향을 받는 것을 확인하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 Proceedings of 6th International Joint Symposium on Microeletronics and Packaging
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• 대한전자공학회논문지SD
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• 제37권12호
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• pp.1-9
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• 2000

미세구조 N-채널 MOSFET의 게이트-소스 전압에 의존하는 유효 채널 캐리어 이동도와 소스 및 드레인 기생저항의 정확한 분리 추출을 위해서 새로운 ERM-방법을 제안하였다. ERM-방법은 선형영역에서 동작하는 게이트 길이가 다른 두개의 소자($W_m/L_m=30{\mu}m/0.6{\mu}m, 30{\mu}m/1{mu}m$)에 적용되었고 유효 채널 캐리어 이동도를 모델링하고 추출하는 과정에서 게이트-소스 전압에 의존하는 소스 및 드레인 기생저항의 영향을 고려하였다. ERM-방법으로 추출된 특성변수들을 사용한 해석적 모델식과 소자의 측정데이터를 비교해본 결과 오차가 거의 없이 일치하는 것을 확인하였다. 따라서, ERM-방법을 사용하면 대칭구조 및 비대칭구조 소자의 유효 채널 캐리어 이동도, 소스 및 드레인 기생저항과 다른 특성변수들을 정확하고 효율적으로 추출할 수 있을 것으로 기대된다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.577-587
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• 2004

A coaxial pulsed plasma thruster (PPT) with a Teflon cavity was designed, and its performance characteristics were examined varying stored energy, cavity length and capacitance. The PPT was tested as the entire system including the discharge circuit, and the results were explained with both the transfer efficiency and the acceleration efficiency. The transfer efficiency is defined as the fraction of energy in capacitors supplied into plasma, and the acceleration efficiency as the fraction of energy supplied into plasma converted to thrust energy. To estimate these efficiencies, the equivalent plasma resistance was defined and calculated using energy conservation during discharge. The equivalent plasma resistance proportionally increased with cavity length, and therefore the current peak increased with decreasing cavity length. The energy density calculated by the transfer efficiency was increased with decreasing cavity length. As a result, higher acceleration efficiency and lower transfer efficiency were obtained with shorter cavity length. Accordingly, there was an optimal cavity length for the thrust efficiency. The specific impulse and the impulse bit per unit stored energy ranged from 390 s and 50 $\mu$ Ns/J for a cavity length of 34 mm to 825 s and 11 $\mu$ Ns/J for a cavity length of 4 mm when the stored energy was fixed to 21.4J. Thus, it was showed that the performance of this PPT approached that of electromagnetic-acceleration-type PPT with decreasing cavity length. The PPT achieved thrust efficiencies of 10-12% at 21.4 J and 6-7% at 5.35 J at cavity lengths between 14 mm and 29 mm.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.